107 results on '"Chen, Min-Cheng"'
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2. Reduced Switching Current with a Light Metal in a Tri-layer Spin-orbit Torque Device
3. 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS
4. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
5. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
6. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
7. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
8. Research of Nano-Scaled Transition Metal Oxide Resistive Non-Volatile Memory (R-RAM)
9. Enhancing Engineering Education via Physical Experiments: The Case of Learning Energy Storage with a Flywheel System
10. Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs
11. Observation of Fano Resonance in One Whispering-gallery-mode Microresonator
12. Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors
13. Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma
14. Observation of Fano Resonance in One Whispering-gallery-mode Microresonator
15. Erratum: “Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology”
16. Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications
17. A Novel Method of Transfer-Function Identification for Unknown Systems
18. Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling
19. RF power FinFET transistors with a wide drain-extended fin
20. Cover Picture: Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode (Phys. Status Solidi RRL 3/2017)
21. Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode
22. FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits
23. Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition
24. A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET
25. A Hybrid Implant Doping Technique with Plasma Immersion Ion Implant (PIII) Process for 10 nm Fin Cannel of 3D-FET
26. Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review
27. A device design of an integrated CMOS poly-silicon biosensor-on-chip to enhance performance of biomolecular analytes in serum samples
28. FinFET With High- $\kappa $Spacers for Improved Drive Current
29. Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing
30. Low-Resistance Contacts for Single-Layered MoS2 n-FETs By Hydrogen Plasma
31. Sub-60mV-swing negative-capacitance FinFET without hysteresis
32. TMD FinFET with 4 nm thin body and back gate control for future low power technology
33. Enabling low power BEOL compatible monolithic 3D+ nanoelectronics for IoTs using local and selective far-infrared ray laser anneal technology
34. High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications
35. Scalable fabrication of a complementary logic inverter based on MoS2fin-shaped field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nh00419f
36. Study of sub-5 nm RRAM, tunneling selector and selector less device
37. A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis
38. Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory
39. Magnetic-Composite-Modified Polycrystalline Silicon Nanowire Field-Effect Transistor for Vascular Endothelial Growth Factor Detection and Cancer Diagnosis
40. A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing
41. High Performance Gallium Nitride GAA Nanowire with 7nm Diameter for Ultralow-Power Logic Applications
42. A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device.
43. Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs
44. FinFET With High- $\kappa $ Spacers for Improved Drive Current.
45. SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory.
46. CAUSATION ANALYSIS OF THE DIRECT CLIMATE EFFECTS OF ANTHROPOGENIC AEROSOL ON EAST-ASIAN SUMMER MONSOON.
47. 3D Ferroelectric-like NVM/CMOS hybrid chip by sub-400 °C sequential layered integration
48. Threshold Vacuum Switch (TVS) on 3D-stackable and 4F2 cross-point bipolar and unipolar resistive random access memory
49. Sub-fM DNA sensitivity by self-aligned maskless thin-film transistor-based SoC bioelectronics
50. A fully integrated hepatitis B virus DNA detection SoC based on monolithic polysilicon nanowire CMOS process
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