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In this paper, we provide an experimental proof-of-concept of this dynamic 3D current manipulation through a 3D-printed reconfigurable meta-radiator with periodically slotted current elements. By utilizing the working frequency and the mechanical configuration comprehensively, the radiation pattern can be switched among 12 states. Inspired by maximum likelihood method in digital communications, a robustness-analysis method is proposed to evaluate the potential error ratio between ideal cases and practice. Our work provides a previously unidentified model for next-generation information distribution and terahertz-infrared wireless communications.

Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the diffraction barrier imposed on the beam width and its longitudinal extend of laser focus, a trade-off must be made between cutting accuracy and aspect ratio in conventional laser processing, with accuracy typically approaching a micron and the aspect ratio on the order of $10^2$. Herein, we propose a method to circumvent this limitation. It is based on the laser modification induced by a back-scattering interference crawling mechanism, which creates a positive feedback for homogenizing longitudinal energy deposition and lateral sub-wavelength light confinement during laser-matter interaction. Consequently, cutting width on the scale of tens of nanometers and aspect ratio $10^3 \sim 10^4$ were simultaneously achieved. We refer to this technique as ``super stealth dicing'', which is validated through numerical simulations, ensuring its broad applicability. It can be applied to various transparent functional solids, such as glass, laser crystal, ferroelectric, and semiconductor, and is elevating the precision of future advanced laser dicing, patterning, and drilling into the nanometric era., Comment: 32 pages, 5 figures

Inert (noble gas) elements are extremely inactive to surrounding chemical environment and are frequently employed as protective gas in various semiconductor fabrication processes. In this work, we surprisingly discover that high doses of argon up to $10^{17}-10^{20} cm^{-3}$ can be measured in silicon exposed by laser pulses even after 1300 days. First-principles calculations and molecular dynamics identify a unique argon-locking-vacancy (ALV) defect atomic model in silicon. The ALV defect is dynamically robust in contrast to the frequently moving pure Si vacancy. While argon is chemically inert, it readily modulates defect states of the occupied vacancy via steric repulsion and rattling motions, leading to significant band splitting within bandgap and thus strong infrared absorptions. Moreover, the repulsion between substitutional argon and dangling bonds results in shallow donors which explains the confusion of enhanced n-type carriers in experiments. The work paves a way of using noble gas element to produce active infrared absorption source for the non-heteroepitaxy photonic detectors directly on silicon wafer at infrared communication wavelength.

Non-Abelian braiding has attracted significant attention because of its pivotal role in describing the exchange behaviors of anyons--a candidate for realizing quantum logics. The input and outcome of non-Abelian braiding are connected by a unitary matrix which can also physically emerge as a geometric-phase matrix in classical systems. Hence it is predicted that non-Abelian braiding should have analogues in photonics, but a feasible platform and the experimental realization remain out of reach. Here, we propose and experimentally realize an on-chip photonic system that achieves the non-Abelian braiding of up to five photonic modes. The braiding is realized by controlling the multi-mode geometric-phase matrix in judiciously designed photonic waveguide arrays. The quintessential effect of braiding--sequence-dependent swapping of photon dwell sites is observed in both classical-light and single-photon experiments. Our photonic chips are a versatile and expandable platform for studying non-Abelian physics, and we expect the results to motivate next-gen non-Abelian photonic devices., Comment: 6 pages, 4 figures

Photonic topological states, providing light-manipulation approaches in robust manners, have attracted intense attention. Connecting photonic topological states with far-field degrees of freedom(DoFs) has given rise to fruitful phenomena. Recently emerged higher-order topological insulators (HOTIs), hosting boundary states two or more dimensions lower than those of bulk, offer new paradigms to localize/transport light topologically in extended dimensionalities. However, photonic HOTIs have not been related to DoFs of radiation fields yet. Here, we report the observation of polarization-orthogonal second-order topological corner states at different frequencies on a designer-plasmonic Kagome metasurface in the far field.Such phenomenon stands on two mechanisms, i.e., projecting the far-field polarizations to the intrinsic parity DoFs of lattice modes and the parity splitting of the plasmonic corner states in spectra. We theoretically and numerically show that the parity splitting originates from the underlying inter-orbital coupling. Both near-field and far-field experiments verify the polarization-orthogonal nondegeneratesecond-order topological corner states. These results promise applications in robust optical single photon emitters and multiplexed photonic devices., Comment: 18 pages, 4 figures