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Recent advances in image data processing through machine learning and especially deep neural networks (DNNs) allow for new optimization and performance-enhancement schemes for radiation detectors and imaging hardware through data-endowed artificial intelligence. We give an overview of data generation at photon sources, deep learning-based methods for image processing tasks, and hardware solutions for deep learning acceleration. Most existing deep learning approaches are trained offline, typically using large amounts of computational resources. However, once trained, DNNs can achieve fast inference speeds and can be deployed to edge devices. A new trend is edge computing with less energy consumption (hundreds of watts or less) and real-time analysis potential. While popularly used for edge computing, electronic-based hardware accelerators ranging from general purpose processors such as central processing units (CPUs) to application-specific integrated circuits (ASICs) are constantly reaching performance limits in latency, energy consumption, and other physical constraints. These limits give rise to next-generation analog neuromorhpic hardware platforms, such as optical neural networks (ONNs), for high parallel, low latency, and low energy computing to boost deep learning acceleration.

A single-source, single-detector architecture has been developed to implement a reconfigurable optical interconnection network multimode optical fiber sensor arrays. The network was realized by integrating LiNbO3 electrooptic (EO) gratings working at the Raman Na regime and a massive fan-out waveguide hologram (WH) working at the Bragg regime onto a multimode glass waveguide. The glass waveguide utilized the whole substrate as a guiding medium. A 1-to-59 massive waveguide fan-out was demonstrated using a WH operating at 514 nm. Measured diffraction efficiency of 59 percent was experimentally confirmed. Reconfigurability of the interconnection was carried out by generating an EO grating through an externally applied electric field. Unlike conventional single-mode integrated optical devices, the guided mode demonstrated has an azimuthal symmetry in mode profile which is the same as that of a fiber mode.

The increasing use of highly augmented digital flight-control systems in modern military helicopters prompted an examination of the influence of the influence of rotor dynamics and other high-order dynamics on control-system performance. A study was conducted at NASA Ames Research Center to correlate theoretical predictions of feedback gain limits in the roll axis with experimental test data obtained from a variable-stability research helicopter. Feedback gains, the break frequency of the presampling sensor filter, and the computational frame time of the flight computer were systematically varied. The results, which showed excellent theoretical and experimental correlation, indicate that the rotor-dynamics, sensor-filter, and digital-data processing delays can severely limit the usable values of the roll-rate and roll-attitude feedback gains.

The CH-47B is the third in a series of variable-stability helicopters developed and operated by NASA since 1952 to investigate helicopter and VTOL handling qualities. Recently, several new capabilities were added to this helicopter to enable it to better support new and evolving research requirements. The installation of a programmable force-feel system for the evaluation pilot's conventional cyclic stick, and a four-axis side-stick controller permit a range of in-flight investigations concerning manipulator characteristics and augmentation system features that had not been possible with earlier NASA research helicopters. A recently installed color electronic display system with a programmable symbol generator will permit the investigation of display formats for a variety of VTOL and helicopter missions. Finally, a powerful new general-purpose flight computer is now in operation. It is programmable in high-level languages and will provide more efficient support of research programs. In addition to these new hardware capabilities, flight-control software has been developed to improve the in-flight simulation capability of the aircraft. A brief description of the CH-47B's variable-stability research equipment is provided, recent research programs are summarized, and some remarks concerning the potential of the helicopter are presented.

The importance of recognizing that each lower-order model used for rotorcraft parameter identification has a limited range of applicability is illustrated in some detail. Examples are given to illustrate the use of conditioning the test input signals and the potential of using multi-axis test inputs to enhance the parameter identifiability. The paper discusses the benefits and limitations of using frequency sweeps as flight-test input signals for identification of frequency response for rotorcraft and for the subsequent fitting of parametric transfer-function models. This paper demonstrates the major role played by analytical modeling and the understanding of the physics involved in the rotorcraft flight dynamics, particularly understanding the limit of lower-order models, in achieving successful rotorcraft parameter identification.

The increasing use of highly augmented digital flight-control systems in modern military helicopters prompted an examination of the influence of rotor dynamics and other high-order dynamics on control-system performance. A study was conducted at NASA Ames Research Center to correlate theoretical predictions of feedback gain limits in the roll axis with experimental test data obtained from a variable-stability research helicopter. Feedback gains, the break frequency of the presampling sensor filter, and the computational frame time of the flight computer were systematically varied. The results, which showed excellent theoretical and experimental correlation, indicate that the rotor-dynamics, sensor-filter, and digital-data processing delays can severely limit the usable values of the roll-rate and roll-attitude feedback gains.

The parallel development of digital engine and flight controls for U.S. Army helicopters has made possible the future derivation of a fully integrated digital flight/propulsion control system. A NASA/Army research program has been undertaken to exploit these possibilities, ultimately yielding a generation of helicopters with exceptional agility and maneuverability in military roles and low pilot workloads in all-weather civil aviation missions. The program's three phases respectively address system modeling and analysis, flight hardware and software development, and flight evaluations aboard a research vehicle.

The objectives of the rotorcraft handling qualities research program at Ames Research Center are twofold: (1) to develop basic handling qualities design criteria to permit cost effective design decisions to be made for helicopters, and (2) to obtain basic handling qualities data for certification of new rotorcraft configurations. The research on the helicopter handling qualities criteria has focused primarily on military nap-of-the-earth (NOE) terrain flying missions, which are flown in day visual meteorological conditions (VMC) and instrument meteorological conditions (IMC), or at night. The Army has recently placed a great deal of emphasis on terrain flying tactics in order to survive and effectively complete the missions in modern and future combat environments. Unfortunately, the existing Military Specification MIL-H 8501A which is a 1961 update of a 1951 document, does not address the handling qualities requirements for terrain flying. The research effort is therefore aimed at filling the void and is being conducted jointly with the Army Aeromechanics Laboratory at Ames. The research on rotorcraft airworthiness standards with respect to flying qualities requirements was conducted to collaboration with the Federal Aviation Administration (FAA).

Previously cited in issue 19, p. 2983, Accession no. A82-39117

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

A sequence of ground and flight simulation experiments was conducted to investigate helicopter instrument-flight-rules airworthiness criteria. The first six of these experiments and major results are summarized. Five of the experiments were conducted on large-amplitude motion base simulators. The NASA-Army V/STOLAND UH-1H variable-stability helicopter was used in the flight experiment. Artificial stability and control augmentation, longitudinal and lateral control, and in pitch and roll attitude augmentation were investigated. Previously announced in STAR as N82-23219

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

The longitudinal and radial distributions of EL2 in undoped semi-insulating and intentionally doped n-type GaAs crystals grown by the liquid encapsulated Czochralski technique are compared. Longitudinal profiles in undoped crystals are controlled by changes in melt stoichiometry as the crystal is pulled from the melt. EL2 profiles along crystals doped above about 1 x 10 to the 17th/cu cm, on the other hand, are controlled primarily by the carrier concentration as a result of the suppression of EL2 by free electrons. Radial EL2 profiles are typically W shaped and M shaped in undoped and doped (above threshold) crystals, respectively. The origin of these radial profiles is discussed in terms of residual stress, melt stoichiometry, and the suppresion of EL2 by electrons. The results are also discussed in the light of the antisite model for EL2.

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

It is shown that the incidence of twin formation in large diameter, undoped, (100) LEC GaAs is reduced when the melt composition is slightly As-rich. Twenty GaAs crystals were grown from stoichiometric and nonstoichiometric melts. The results suggest that the barrier to twin formation is related to the stoichiometry of the solid at the solidification front.

A mathematical model, suitable for piloted simulation of the flying qualities of helicopters, is a nonlinear, total force and moment model of a single main rotor helicopter. The model has ten degrees of freedom: six rigid body, three rotor flapping, and the rotor rotational degrees of freedom. The rotor model assumes rigid blades with rotor forces and moments radially integrated and summed about the azimuth. The fuselage aerodynamic model uses a detailed representation over a nominal angle of attack and sideslip range of + or - 15 deg., as well as a simplified curve fit at large angles of attack or sideslip. Stabilizing surface aerodynamics are modeled with a lift curve slope between stall limits and a general curve fit for large angles of attack. A generalized stability and control augmentation system is described. Additional computer subroutines provide options for a simplified engine/governor model, atmospheric turbulence, and a linearized six degree of freedom dynamic model for stability and control analysis.

An analyticl procedure developed to permit a systematic examination of rotorcraft flight dynamics in steep high-g turns is presented. The procedure is used in a numerical investigation of a tilt-rotor aircraft and three single-rotor helicopters that have different types of main rotor systems. The results indicate (1) that strong coupling in longitudinal and lateral-directional motions exists for these rotorcraft in high-g turns; (2) that for single-rotor helicopters, the direction of turn has a significant influence on flight dynamics; and (3) that a stability and control augmentation system that is designed on the basis of standard small-disturbance equations of motion from steady straight and level flight and that otherwise performs satisfactorily in operations near 1 g, becomes significantly degraded in steep turning flight.

It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the melt stoichiometry. Twelve crystals were grown from stoichiometric and nonstoichiometric melts. The material was characterized by secondary ion mass spectrometry, localized vibrational mode far infrared spectroscopy, Hall-effect measurements, optical absorption, and photoluminescence. A quantitative model for the compensation mechanism in the semi-insulating material was developed based on these measurements. The free carrier concentration is controlled by the balance between EL2 deep donors and carbon acceptors; furthermore, the incorporation of EL2 is controlled by the melt stoichiometry, increasing as the As atom fraction in the melt increases. As a result, semi-insulating material can be grown only from melts above a critical As composition. The practical significance of these results is discussed in terms of achieving high yield and reproducibility in the crystal growth process.

The studies were undertaken to investigate the effects of rotor design parameters, interaxis coupling, and various levels of stability and control augmentation on the flying qualities of helicopters performing low-level, terrain-flying tasks in visual meteorological conditions. Some unified results are presented, and the validity and limitations of the flying-qualities data obtained are interpreted. Selected results, related to various design parameters, provide guidelines for the preliminary design of rotor systems and aircraft augmentation systems.

A sequence of ground and flight simulation experiments was conducted to investigate helicopter instrument-flight-rules airworthiness criteria. The first six of these experiments and major results are summarized. Five of the experiments were conducted on large-amplitude motion base simulators. The NASA-Army V/STOLAND UH-1H variable-stability helicopter was used in the flight experiment. Artificial stability and control augmentation, longitudinal and lateral control, and in pitch and roll attitude augmentation were investigated.

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

It is shown that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The concentration of the deep donor EL2 in the crystal depends on the As concentration in the melt, increasing from about 5 x 10 to the 15th per cu cm to 1.7 x 10 to the 16th per cu cm as the As atom fraction increases from 0.48 to 0.51. Furthermore, it is shown that the free-carrier concentration of semi-insulating GaAs is determined by the relative concentrations of EL2 and carbon acceptors. As a result, semi-insulating material can be obtained only above a critical As concentration (0.475-atom fraction in the material here) where the concentration of EL2 is sufficient to compensate residual acceptors. Below the critical As concentration the material is p type due to excess acceptors.

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Undoped semi-insulating GaAs grown by the high-pressure liquid encapsulated Czochralski (LEC) method has been produced for use in direct ion implantation in several laboratories. A clear understanding of the factors controlling impurity transport and compensation in these materials has been lacking to date. In this work, detailed characterization has been performed on undoped semi-insulating crystals grown from both SiO2 and PBN crucibles followed by a proposed impurity model and compensation mechanism.

An analytical approach to the study of flight dynamics of aircraft operating in a high-angle-of-attack flight regime and of helicopters operating in extreme thrust conditions is presented. Steady coordinated high-g turns are used to establish the initial equilibrium flight conditions near stall angles of attack. The kinematic properties of the aircraft in steady coordinated turns are examined: in high-g turns, pitch rate (independent of the angle of attack) is of a much larger magnitude than roll and yaw rate; a substantial roll rate is found to develop in steep turns for all angles of attack; the angle of attack also has a significant effect on the pitch attitude, with decreasing influence as the normal load factor increases. The exact small disturbance equations of motion of the aircraft in general steady turns are also developed for application to both rotary-wing and fixed-wing aircraft in extreme conditions. These equations are in a first-order, vector-matrix format, and are thus compatible with many efficient software packages developed in modern system theory.

A study on the kinematic relationship of the variables of helicopter motion in steady, coordinated turns involving inherent sideslip is described. A set of exact kinematic equations which govern a steady coordinated helical turn about an Earth referenced vertical axis is developed. A precise definition for the load factor parameter that best characterizes a coordinated turn is proposed. Formulas are developed which relate the aircraft angular rates and pitch and roll attitudes to the turn parameters, angle of attack, and inherent sideslip. A steep, coordinated helical turn at extreme angles of attack with inherent sideslip is of primary interest. The bank angle of the aircraft can differ markedly from the tilt angle of the normal load factor. The normal load factor can also differ substantially from the accelerometer reading along the vertical body axis of the aircraft. Sideslip has a strong influence on the pitch attitude and roll rate of the helicopter. Pitch rate is independent of angle of attack in a coordinated turn and in the absence of sideslip, angular rates about the stability axes are independent of the aerodynamic characteristics of the aircraft.

A steep coordinated helical turn at extreme angles of attack with inherent sideslip is of primary interest in this study. Unlike fixed-wing aircraft, the helicopter in a steady coordinated turn will inherently sideslip. A set of exact kinematic equations describing this motion in steady helical turns has been developed, and a rational definition for the load factor that best characterizes a coordinated turn for a helicopter has been proposed. An analysis has also been completed on the effects of sideslip on the kinematic relationships in a coordinated turn which is based on new closed-form solutions which relate the aircraft angular rates and pitch and roll attitudes to the turn parameters, angle of attack, and sideslip. The results show that the bank angle of the aircraft can differ markedly from the tilt angle of the normal load factor and that the normal load factor can also differ substantially from the accelerometer reading along the vertical body axis of the aircraft. Generally, sideslip has a strong influence on the pitch attitude and roll rate of the helicopter. The study also indicates that pitch rate is independent of angle of attack in a coordinated turn and that in the absence of sideslip, angular rates about the stability axes are independent of the aerodynamic characteristics of the aircraft.

The results of a study conducted to investigate further a means of choosing primary rotor parameters to reduce the coupling of longitudinal and lateral flapping in hover and in forward flight are presented. The rotor parameters included - flapping hinge offset, flapping hinge restraint, pitch-flap coupling, and blade Lock number - are known to influence the agility, stability, and operational safety of helicopters. Effects of the nonuniform downwash model of White and Blake on the blade flapping motion are examined, and the theoretical calculation is then correlated with experimental test data. The condition for achieving perfect decoupling of the flapping response due to aircraft pitch and roll rates, which was previously obtained for a hovering rotor, is evaluated in forward flight. The results show that negligible coupling is achieved in forward flight; moreover, there is the additional benefit of a slight reduction in the coupling of the roll rate to coning. It is also indicated that the values of the rotor parameters chosen according to the decoupling condition are moderate and that the flapping motion is stable with the parameters chosen.

The results of a feasibility study and preliminary design for active control research and validation using the Total In-Flight Simulator (TIFS) aircraft are documented. Active control functions which can be demonstrated on the TIFS aircraft and the cost of preparing, equipping, and operating the TIFS aircraft for active control technology development are determined. It is shown that the TIFS aircraft is as a suitable test bed for inflight research and validation of many ACT concepts.

A coordinated analysis and ground simulator experiment was performed to investigate the effects on single rotor helicopter handling qualities of systematic variations in the main rotor hinge restraint, hub hinge offset, pitch-flap coupling, and blade lock number. Teetering rotor, articulated rotor, and hingeless rotor helicopters were evaluated by research pilots in special low level flying tasks involving obstacle avoidance at 60 to 100 knots airspeed. The results of the experiment are in the form of pilot ratings, pilot commentary, and some objective performance measures. Criteria for damping and sensitivity are reexamined when combined with the additional factors of cross coupling due to pitch and roll rates, pitch coupling with collective pitch, and longitudinal static stability. Ratings obtained with and without motion are compared. Acceptable flying qualities were obtained within each rotor type by suitable adjustment of the hub parameters, however, pure teetering rotors were found to lack control power for the tasks. A limit for the coupling parameter L sub q/L sub p of 0.35 is suggested.