Search

Your search keyword '"Chen, Xingbi"' showing total 155 results
Start Over Author "Chen, Xingbi"
155 results on '"Chen, Xingbi"'

26. A Novel Double-RESURF SOI-LIGBT With Improved VON-EOFF Tradeoff and Low Saturation Current.

Author

Hu, Huan, Kong, Moufu, Yi, Bo, and Chen, Xingbi

Subjects
INSULATED gate bipolar transistors, TRANSISTORS, SHORT-circuit currents, SHORT circuits, BREAKDOWN voltage
Abstract

A novel double-reduced surface field technique (RESURF) insulated gate bipolar transistor based on lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) with deep-trench-cathode and self-biased pMOS is proposed and investigated by numerical simulation. The proposed SOI-LIGBT remarkably features a deep trench, a self-biased pMOS, a carrier stored layer (n-CS), and p-shield region at the cathode side. Thanks to the n-CS, the proposed device achieves a low ON-state voltage (VON). And the doping concentration of the n-CS (NCS) has almost no impact on the breakdown voltage (BV). Benefited from the self-biased pMOS, the proposed device shows low saturation current and extended short-circuit current withstand-time. In addition, the proposed structure achieves a low turn-off loss (EOFF). Simulation results reveal that, compared with the conventional double-RESURF SOI-LIGBT, the proposed structure achieves 15% VON reduction and 50% saturation current reduction. In addition, the proposed device can sustain the short circuit current for 90% longer time than the conventional double-RESURF SOI-LIGBT. [ABSTRACT FROM AUTHOR]

Published
2020
Full Text
View/download PDF

32. A novel SCR-LDMOS for high voltage ESD protection

Author

Deng Jing and Chen Xingbi

Subjects
LDMOS, Engineering, business.industry, Process (computing), Electrical engineering, High voltage, business, Cmos process, Voltage
Abstract

A novel SCR-LDMOS structure is presented and discussed. The proposed device combines the features of the conventional LDMOS and SCR-LDMOS, resulting in an improved ESD protection capability for high voltage application. Simulated TLP results show that the proposed structure with 40 μm width and 0.1 mA external injection current exhibits a 86 V trigger voltage and a 31 V holding voltage. ESD characteristics of the proposed device can be adjusted to different applications by altering the value of the external injection current and the length of the SDT (Spacing between Drain and Trigger). Moreover, the process of the proposed device is compatible with the stand CMOS process.

Published
2015

41. A superjunction structure using high-kinsulator for power devices: theory and optimization

Author

Huang Mingmin and Chen Xingbi

Subjects
010302 applied physics, Permittivity, Materials science, Condensed matter physics, business.industry, 020502 materials, Doping, Analytic model, Electrical engineering, Insulator (electricity), 02 engineering and technology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0205 materials engineering, 0103 physical sciences, MOSFET, Materials Chemistry, Power semiconductor device, Electrical and Electronic Engineering, business, High-κ dielectric
Abstract

A superjunction (SJ) structure using a high-k (Hk) insulator is studied and optimized by using an analytic model. Results by using the proposed model match well with that of numerical calculations. Numerical calculation results show that, only needing an Hk insulator with a permittivity of I = 5S, the optimum specific on-resistance of the MOSFET applying the proposed structure is about 8%–20% lower than that of the conventional SJ-MOSFET with V B = 200–1000 V. An example with V B = 400 V shows that, the permissible error range of doping concentration of the p-region to maintain above 80% of V B is from −37% to +32% for the former and is only from −13% to +13% for the latter.

Published
2016

49. A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line SMPS

Author

Liu Jizhi and Chen Xingbi

Subjects
Power supply rejection ratio, Engineering, Switched-mode power supply, business.industry, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Power factor, Capacitive power supply, Constant power circuit, AC adapter, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Gate driver, Switched-mode power supply applications, business
Abstract

A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line switching model power supply IC is described. The structure and properties of the device are analyzed and simulated. The experimental results have verified that the structure can realize the self-generated function, be controlled by the low-voltage logic signal and get 14V of the low-voltage power supply. Using this novel power supply structure for the off-line switching model power supply IC can save the cell area, reduce the power consumption of the circuit, make control be easily and supply enough large output voltage for the power supply of the gate driver as well.

Published
2009

Catalog

Books, media, physical & digital resources
See catalog results