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The continued advancement of organic electronic technology will establish organic electrochemical transistors as pivotal instruments in the field of biological detection. Here, we present a comprehensive review of the state-of-the-art technology and advancements in the use of organic electrochemical transistors as biosensors. This review provides an in-depth analysis of the diverse modification materials, methods, and mechanisms utilized in organic electrochemical transistor-structured biosensors (OETBs) for the selective detection of a wide range of target analyte encompassing electroactive species, electro-inactive species, and cancer cells. Recent advances in OETBs for use in sensing systems and wearable and implantable applications are also briefly introduced. Finally, challenges and opportunities in the field are discussed. [ABSTRACT FROM AUTHOR]

Low-frequency noise (LFN) in InSnZnO (ITZO) thin-film-transistors (TFT) with high-quality SiO2 gate oxide (GO) stacks is studied. This stack is fabricated by the plasma enhanced chemical vapor deposition (PECVD) and comprises two single layers. One layer is deposited by a SiH4 source (SiH4–SiO2), and the other uses a tetraethyl-orthosilicate precursor (TEOS-SiO2). The drain current noise power spectral densities follow the typical 1/f rule, and the main origin of LFN changes with the variation of drain current intensities. At low drain current intensities, LFN is affected by grain boundaries in the channel. As the drain current intensities increase, LFN originates from the carrier number fluctuations in devices with single TEOS-SiO2 GOs and from the carrier number with correlated mobility fluctuations in devices with SiO2 stacks GOs. At extremely high drain current intensities, the contact noise acts as a significant source of LFN in devices with SiO2 GO stacks. According to the carrier number with correlated mobility fluctuation (Δ N − Δ μ) model, the devices with optimal stacks GOs exhibit a relatively low trap density near the ITZO/SiO2 interface. Additionally, these devices have a lower border trap density in GOs compared to those with single compositions. It demonstrates that high-quality SiO2 stacks reduce traps near the SiO2/ITZO interface, leading to enhanced devices performance. This work provides a precise and efficient method to evaluate the quality of GOs in metal oxide TFTs. [ABSTRACT FROM AUTHOR]

In this paper, Co-doped Na3V2−xCox(PO4)2F3(x = 0,0.1,0.5,0.7) sodium ion battery anode material was prepared by one-step hydrothermal method, and Na3V1.5Co0.5(PO4)2F3 anode material coated with graphene was also prepared. It is confirmed that moderate Co2+ doping can improve the electrochemical performance of NVPF. Among all samples, Na3V1.5Co0.5(PO4)2F3@Graphene shows the best rate and cycle performance. It exhibits the highest specific capacity of 91.5 and 48.8 mAh/g at 1C, respectively when x = 0.5, after coating graphene, the charge-discharge specific capacities of 1C cycle are 128.2 mAh/g and 63.5 mAh/g for the first time, and 62.2 mAh/g and 45.1 mAh/g for 45 weeks.The performance results show that the excellent electrochemical performance of Na3V1.5Co0.5(PO4)2F3@Graphene can be attributed to the increase in electronic conductivity and ion diffusion coefficient. [ABSTRACT FROM AUTHOR]