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Rutin extracted from natural plants has important medical value, so developing accurate and sensitive quantitative detection methods is one of the most important tasks. In this work, HKUST-1@GN/MoO3-Ppy NWs were utilized to develop a high-performance rutin electrochemical sensor in virtue of its high conductivity and electrocatalytic activity. The morphology, crystal structure, and chemical element composition of the fabricated sensor composites were characterized by SEM, TEM, XPS, and XRD. Electrochemical techniques including EIS, CV, and DPV were used to investigate the electrocatalytic properties of the prepared materials. The electrochemical test conditions were optimized to achieve efficient detection of rutin. The 2-electron 2-proton mechanism, consisting of several rapid and sequential phases, is postulated to occur during rutin oxidation. The results show that HKUST-1@GN/MoO3-Ppy NWs have the characteristics of large specific surface area, excellent conductivity, and outstanding electrocatalytic ability. There is a significant linear relationship between rutin concentration and the oxidation peak current of DPV. The linear range is 0.50–2000 nM, and the limit of detection is 0.27 nM (S/N = 3). In addition, the prepared electrode has been confirmed to be useful for rutin analysis in orange juice. [ABSTRACT FROM AUTHOR]

Refractory thin film thermocouples can provide more accurate surface temperature measurement and faster response with excellent chemical and electrical stability at high temperatures in harsh oxidizing environment. Indium tin oxide (ITO) thin films were fabricated by radio frequency magnetron sputtering in gas mixture of Ar and N. The introduction of nitrogen results in significant variations of the electrical and thermoelectric property of ITO thin films. This nitrogen doped ITO thin film was used as negative thermal element to form ITON:Pt thin film thermocouple on Ni-based superalloy substrate. The stability and thermoelectric performance of this thin film thermocouple was investigated up to 1000 °C. [ABSTRACT FROM AUTHOR]