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Electrodeposited tin is a crucial corrosion-resistant metal to protect electronic interconnection and copper circuits in the manufacturing process of electronic products. The corrosion-resistant properties of electrodeposited tin can be improved with the addition of additives in electrodeposition. Three benzaldehyde derivatives including vanillin, ethyl vanillin, and veratraldehyde as brighteners were investigated for tin electrodeposition. Computational and experimental analyses were conducted to investigate the relationship between coating properties and the chemical factors including the molecular structure, adsorption process, and electrochemical behavior of the brighteners. The computational work demonstrated that all three brighteners could hold high reactivity and spontaneously absorb on the tin surface. The results of linear sweep voltammetry tests (LSV) illustrated that all three brighteners effectively increased the cathode polarization but ethyl vanillin exhibited the best inhibiting performance in the tin deposition. Besides, the adsorption behavior of brighteners on the tin layer also affected the grain morphology and preferred growth orientation of the crystal surface. The corrosion rate and side erosion results both indicated that ethyl vanillin could benefit to form a tin coating with good corrosion performance to meet the requirement of copper circuit fabrication of printed circuit board.

Cobalt is a promising material for electronic interconnections in the post-Moore law period. However, the vertical cobalt pillar is not fully compatible with the current electroplating-involved manufacturing process due to hydrogen evolution at the cathode and poor throwing power of the products. In this article, electrodeposition with multiple organic additives was employed to realize the fabrication of cobalt pillars. Electrochemical measurements were used to investigate the depolarization of 3-mercapto-1-propane sulfonate sulfonic acid (MPS) and the polarization of the polyvinylpyrrolidone (PVP) during cobalt electrodeposition. Notably, the competitive adsorption between MPS and PVP was verified and discussed in cobalt electrodeposition. In order to understand the adsorption and functional groups of the additives, quantum chemical calculations were performed to simulate the distribution of electrostatic potential and molecular orbital energy of the additives. Accordingly, the thiol group of MPS and the amide group of PVP were speculated to be the molecular adsorption sites in cobalt electrodeposition. The mechanism including three stages was proposed for cobalt pillar electrodeposition in solution with MPS and PVP. The electrodeposition of practical cobalt pillars with a depth of 50 µm and diameters of 60, 80, and 100 µm was successfully achieved by electroplating experiments, thereby promoting the application of metal cobalt for electronic packaging.

As semiconductor integration scales expand and chip sizes shrink, Through Silicon Via (TSV) technology advances towards smaller diameters and higher aspect ratios, posing significant challenges in thermo-mechanical reliability, particularly within interposer substrates where mismatched coefficients of thermal expansion exacerbate issues. This study conducts a thermo-mechanical analysis of TSV structures within multi-layered complex interposers, and analyzes the thermal stress behavior and reliability under variable temperature conditions (−55 °C to 85 °C), taking into account the typical electroplating defects within the copper pillars in TSVs. Initially, an overall model is established to determine the critical TSV locations. Sub-model analysis is then employed to investigate the stress and deformation of the most critical TSV, enabling the calculation of the temperature cycle life accordingly. Results indicate that the most critical TSV resides centrally within the model, exhibiting the highest equivalent stress. During the temperature cycling process, the maximum deformation experiences approximately periodic variations, while the maximum equivalent stress undergoes continuous accumulation and gradually diminishes. Its peak occurs at the contact interface corner between the TSV and Redistribution Layer (RDL). The estimated life of the critical point is 3.1708 × 10 5 cycles. Furthermore, it is observed that electroplating defect b alleviates thermal stress within TSVs during temperature cycling. This study provides insights into TSV thermal behavior and reliability, which are crucial for optimizing the design and manufacturing processes of advanced semiconductor packaging. [ABSTRACT FROM AUTHOR]

Introduction: This study evaluates the efficacy of metagenomic next-generation sequencing (mNGS) in diagnosing spinal infections and developing therapeutic regimens that combine mNGS, microbiological cultures, and pathological investigations. Methods: Data were collected from 108 patients with suspected spinal infections between January 2022 and December 2023. Lesion tissues were obtained via C-arm assisted puncture or open surgery for mNGS, conventional microbiological culture, and pathological analysis. Personalized antimicrobial therapies were tailored based on these findings, with follow-up evaluations 7 days postoperatively. The sensitivity and specificity of mNGS were assessed, along with its impact on treatment and prognosis. Results: mNGS showed a significantly higher positive detection rate (61.20%) compared to conventional microbiological culture (30.80%) and PCT (28%). mNGS demonstrated greater sensitivity (79.41%) and negative predictive value (63.16%) than cultures (25% and 22.58%, respectively), with no significant difference in specificity and positive predictive value. Seven days post-surgery, a significant reduction in neutrophil percentage (NEUT%) was observed, though decreases in white blood cell count (WBC), erythrocyte sedimentation rate (ESR), and C-reactive protein (CRP) were not statistically significant. At the last follow-up, significant improved in Visual Analogue Scale (VAS) scores, Oswestry Disability Index (ODI), and Japanese Orthopaedic Association (JOA) scores were noted. Conclusion: mNGS outperforms traditional microbiological culture in pathogen detection, especially for rare and critical pathogens. Treatment protocols combining mNGS, microbiological cultures, and pathological examinations are effective and provide valuable clinical insights for treating spinal infections. [ABSTRACT FROM AUTHOR]

Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO2 layer included an IGZO layer, an IGZO/SiO2 interfacial mixing layer, and a SiO2 layer. Higher Ta had only one effect on the IGZO layer and SiO2 layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H2O). At higher Ta, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H2O) in the interfacial layer. Our results suggest that although higher Ta annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing Ta). [ABSTRACT FROM AUTHOR]

With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices. In this paper, the delamination failure mechanism of polymer-based packaging devices is clarified by summarizing the relevant literature and the latest research solutions are proposed. The results show that, at the microscopic scale, thermal stress and moisture damage are still the two main mechanisms of two-phase interface failure of encapsulation devices. Additionally, the application of emerging technologies such as RDL structure modification and self-healing polymers can significantly improve the thermal stress state of encapsulation devices and enhance their moisture resistance, which can improve the anti-delamination reliability of polymer-based encapsulation devices. In addition, this paper provides theoretical support for subsequent research and optimization of polymer-based packages by summarizing the microscopic failure mechanism of delamination at the two-phase interface and introducing the latest solutions. [ABSTRACT FROM AUTHOR]