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4. Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics.

Author

CHEN Xiaoqing, CHENG Aiqiang, ZHU Xinyi, GU Liming, and TANG Shijun

Subjects
GALLIUM nitride, POWER amplifiers, ELECTRIC capacity, ELECTRON mobility, METAL oxide semiconductor field-effect transistors, BOOTSTRAP circuits
Abstract

Copyright of Transactions of Nanjing University of Aeronautics & Astronautics is the property of Editorial Department of Journal of Nanjing University of Aeronautics & Astronautics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2022
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