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A magnetic field sensor is designed and fabricated using a piezoelectric face shear mode Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT)/Metglas magneto-electric (ME) composite. An outstanding ME coupling coefficient up to 1600 V/(cm Oe) was experimentally achieved, being ∼50% higher than the value from the extensional PMN–PT/Metglas ME composite with the same volume. The detection limit was found to be 2 × 10−6 Oe for the DC magnetic field, while it was 2 × 10−8 Oe for the AC magnetic field. The sensitivity of the face shear mode PMN–PT/Metglas ME composite is about one order of magnitude higher than that of a 32 extensional mode PMN–PT/Metglas based ME composite in sensing a weak DC magnetic field. A sensing array was also designed based on the ME composite to image weak DC magnetic fields, demonstrating a great potential promising for sensing weak magnetic fields. [ABSTRACT FROM AUTHOR]

• Innumerable spin gapless points identified in the stable materials Mg 2 VO 4. • Multiple nodal rings located exactly at Fermi level with all hourglass shape dispersions. • Very clean spin gapless band structures and nodal ring states with no other band interferences. • Strong robustness against both the spin orbit coupling effect and strain conditions. • A novel concept of nodal ring spin gapless semiconductor is defined. Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics. Since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs. The synthesized material Mg 2 VO 4 has been detailed with band structure analysis based on first principle calculations. Obtained results revealed that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg 2 VO 4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg 2 VO 4 also shows strong robustness against both the spin orbit coupling effect and strain conditions. For the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications. [ABSTRACT FROM AUTHOR]

In recent years, spin-gapless semiconductors (SGSs) with parabolic and linear band dispersions have aroused great interest worldwide in the field of materials science due to their various attractive properties. In this review, the theoretical and experimental progress from 2008 to 2020 on the structure, electronic, and magnetic properties of almost all the SGSs with one-, two-, and three-dimensional structures are summarized. The potential applications in spintronic devices based on SGSs are introduced. Compared to the SGSs with parabolic band dispersions (PSGSs), the linear Dirac-type SGSs (DSGSs), which belong to the type I linear-type SGSs, host real massless fermions and dissipationless transport properties, and thus are regarded as promising material candidates for applications in ultra-fast and ultra-low-power spintronic devices. The predicted DSGSs are good platforms to achieve the quantum anomalous Hall (QAH) states and to study the entanglement between the DSGS and QAH states. In this work, we introduce the DSGS state and the possible QAH state for the DSGSs predicted in the past six years. Interestingly, nodal-line spin-gapless semiconductors (NLSGSs), which enable fully spin-polarized fermionic states, are currently receiving considerable interest and are highly desirable for promising spintronics applications. In this review, we also summarize four sub-types of NLSGSs with different shapes of nodal lines in momentum space, including the nodal ring, nodal link, nodal chain, and nodal knot. The recent advances in nodal-ring spin-gapless semiconductors and nodal-chain spin-gapless semiconductors are reviewed. Possible new physics and potential applications for the NLSGSs are also discussed. [ABSTRACT FROM AUTHOR]

A magnetic field sensor based on the ΔE effect (the change of elastic modulus of the MS phase under external magnetic field) was designed and fabricated using 36-face shear mode piezoelectric (PE)/magnetostriction (MS) composite. This device was proposed to sense a magnetic field by monitoring the change of the device electrical impedance in magnetic fields. The electrical impedance changes due to ΔE effect and the electromechanical coupling factor of the composite were experimentally and theoretical explored. The dynamic range for the 36-face shear mode composite is found to be ∼400% larger than a 31/32 extensional mode composite. Of particular importance is that the proposed magnetoelectric (ME) sensor based the ΔE effect is able to sense a weak magnetic field without bulky AC/DC excitation coils, which are usually used in the traditional ME sensor based on magneto-mechano-electric coupling effect. A two-dimensional (2D) magnet target imaging array was designed based on the PE/MS magnetic field sensor to image a target magnet located at different distances and with different orientations at room temperature. This design provides a good paradigm for 2D magnetic field sensing and imaging with a simple PE/MS composite sensor structure. [ABSTRACT FROM AUTHOR]

In recent years, the search for new Dirac half-metallic materials has been one of the hotspots in the field of spintronics because they have very good physical properties, such as massless Dirac fermions and full spin polarization. In this study, using density function theory combined with the quasi-harmonic Debye model, we show that perovskite-type dysprosium manganite is a novel half metal with multiple Dirac cones. A detailed study of the electronic, magnetic, and thermodynamic properties of DyMnO 3 was carried out. Furthermore, the effects of uniform strain, the on-site Coulomb interaction U , spin-orbit coupling, and hole and electron doping on the multiple Dirac cones and full spin polarization were investigated. We should point out that such a spin-polarized Dirac material is rare among perovskite-type compounds. Hence, we hope that, through this work, this kind of material will receive more extensive attention in future studies. In this study, using density function theory combined with the quasi-harmonic Debye model, we show that perovskite-type dysprosium manganite is a novel half metal with multiple Dirac cones. Moreover, in order to test whether the material has a long spin coherence length, we studied the effect of SOC on the band structure. Image 1 [ABSTRACT FROM AUTHOR]

The dielectric constant and loss of perovskite DyMn1-xFexO3 samples show strong dispersion in various frequencies, which is indicative of relaxation. The activation energies were obtained through Arrhenius law fitting and range from 0.213 eV to 0.385 eV. The Fe content dependence of the characteristic frequency f0 and the activation energy Eα shows two transitions that are well consistent with the change in orbital ordering. Meanwhile, different magnetic orderings could affect the relaxation and induce the change in Eα. [ABSTRACT FROM AUTHOR]

A novel approach to achieving high areal capacitance and rate capability is demonstrated, whereby an active material is loaded onto a high surface area, filled Ni foam current collector. Micro/nano Ni-filled Ni foam (MNFNF) current collector was fabricated by initially filling commercial Ni foam with Ni slurry and sintering to yield micro Ni-filled Ni foam, followed by electrochemical deposition of nano Ni. This current collector has a greatly enhanced surface area compared to Ni foam, allowing for high mass loading of active material and thereby high areal capacitance and rate capability. Using NiCo 2 O 4 prepared via hydrothermal reaction followed by annealing as the active material, an outstanding areal capacitance of 29.4 F cm -2  at 5 mA cm −2 discharge was achieved, while a high 80% of this capacitance (i.e. 23.5 F cm −2 ) was retained at 50 mA cm −2 discharge, ascribed to the high surface area and high conductivity of the MNFNF current collector. Regarding stability, only a 2% decrease in areal capacitance after 1000 charge/discharge cycles was observed. The approach employed here might be used to enhance the performance of other active materials besides NiCo 2 O 4 . [ABSTRACT FROM AUTHOR]

Multiferroics are a time-honoured research subject by reason for their tremendous application potential in the information industry, such as in multi-state information storage devices and new types of sensors. An outburst of studies on multiferroicity has been witnessed in the 21st century, although this field has a long research history since the 19th century. Multiferroicity has now become one of the hottest research topics in condensed matter physics and materials science. Numerous efforts have been made to investigate the cross-coupling phenomena among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, and ferroelasticity, especially the coupling between electric and magnetic orderings that would account for the magnetoelectric (ME) effect in multiferroic materials. The magnetoelectric properties and coupling behavior of single phase multiferroics are dominated by their domain structures. It was also noted that, however, the multiferroic materials exhibit very complicated domain structures. Studies on domain structure characterization and domain switching are a crucial step in the exploration of approaches to the control and manipulation of magnetic (electric) properties using an electric (magnetic) field or other means. In this review, following a concise outline of our current basic knowledge on the magnetoelectric (ME) effect, we summarize some important research activities on domain switching in single-phase multiferroic materials in the form of single crystals and thin films, especially domain switching behavior involving strain and the related physics in the last decade. We also introduce recent developments in characterization techniques for domain structures of ferroelectric or multiferroic materials, which have significantly advanced our understanding of domain switching dynamics and interactions. The effects of a series of issues such as electric field, magnetic field, and stress effects on domain switching are been discussed as well. It is intended that an integrated viewpoint of these issues, as provided here, will further motivate synergistic activities between the various research groups and industry towards the development and characterization of multiferroic materials. [ABSTRACT FROM AUTHOR]

This manuscript reports the theoretical results on the magneto-electronic properties of 8 new rare-earth-element-based equiatomic quaternary Heusler (EQH) half-metallic materials (HMMs) MCoTiZ (M = Lu, La; Z = Si, Ge, Sn) and ScCoTiN (N = Si, Ge) by means of the first-principles calculations. It is observed that all the EQH compounds (type III structure) studied in this work are stable in the ferromagnetic phase. The total magnetic moments of these EQH HMMs are all 2 μ B, and they obey the well-known Slater-Pauling behavior, M t = Z t -18, M t is the total magnetic moment and Z t is the total number of valence electrons. The half-metallic band gaps ( E HM ) of LuCoTiSi, LuCoTiGe, LuCoTiSn, LaCoTiSi, LaCoTiGe, LaCoTiSn, ScCoTiSi, and ScCoTiGe EQH compounds are respectively equal to 0.29 eV, 0.24 eV, 0.08 eV, 0.15 eV, 0.15 eV, 0.19 eV, 0.19 eV, and 0.15 eV. Compared to EQH HMMs only composed of 3d/4d transition metal elements, the E HM values of rare-earth-element-based EQH HMMs (except for LuCoTiSn) are larger, which is beneficial to the half-metallic stability in practical applications. Importantly, our work demonstrates that these compounds preserve their half-metallic states when the cubic primitive cell is tetragonally deformed or when the unit cell volume changes under the influence of uniform strain. Two types of strain are also applied to examine the magnetic and electronic properties of these compounds. [ABSTRACT FROM AUTHOR]

The spin-gapless semiconductors with parabolic energy dispersions [1–3] have been recently proposed as a new class of materials for potential applications in spintronic devices. In this work, according to the Slater-Pauling rule, we report the fully-compensated ferrimagnetic (FCF) behavior and spin-gapless semiconducting (SGS) properties for a new inverse Heusler compound Zr 2 MnGa by means of the plane-wave pseudo-potential method based on density functional theory. With the help of GGA-PBE, the electronic structures and the magnetism of Zr 2 MnGa compound at its equilibrium and strained lattice constants are systematically studied. The calculated results show that the Zr 2 MnGa is a new SGS at its equilibrium lattice constant: there is an energy gap between the conduction and valence bands for both the majority and minority electrons, while there is no gap between the majority electrons in the valence band and the minority electrons in the conduction band. Remarkably, not only a diverse physical nature transition, but also different types of spin-gapless features can be observed with the change of the lattice constants. Our calculated results of Zr 2 MnGa compound indicate that this material has great application potential in spintronic devices. [ABSTRACT FROM AUTHOR]

Plane-wave pseudo-potential methods based on density functional theory are employed to investigate the electronic structures, and the magnetic and half-metallic properties of the newly designed quaternary Heusler compounds ZrRhHfZ (Z = Al, Ga, In) without 3d transition metal elements. The calculated results show that ZrRhHfZ (Z = Al, Ga, In) compounds are half-metallic, with 100% spin polarization around the Fermi level. The structural stability of these compounds has been tested from the aspects of their cohesion energy and formation. The spin-flip/half-metallic gaps of ZrRhHfZ (Z = Al, Ga, In) compounds are quite large, with values of 0.2548 eV, 0.3483 eV, and 0.2866 eV, respectively. These compounds show Slater-Pauling behavior, and the total spin magnetic moment per unit cell ( M t ) scales with the total number of valence electrons ( Z t ) following the rule: M t = Z t − 18. The magnetization of ZrRhHfZ (Z = Al, Ga, In) compounds mainly comes from the 4 d electrons of the Zr atoms and the 5 d electrons of the Hf atoms. Furthermore, the effects of uniform strain and tetragonal deformation on the half metallicity has been investigated in detail, which is important for practical application. Finally, we reveal that the half-metallicity can be maintained when the Coulomb interactions are considered. [ABSTRACT FROM AUTHOR]

Recently, spin-gapless semiconductors (SGSs) and half-metallic materials (HMMs) have received considerable interest in the fields of materials sciences and solid-state physics because they can provide a high degree of spin polarization in electron transport. The results on band structure calculations reveal that the metallic fully-compensated ferrimagnet (M-FCF) Mn 2 ZnMg becomes half-metallic fully-compensated ferrimagnet (HM-FCF), fully-compensated ferrimagnetic semiconductor (FCF-S) and fully-compensated ferrimagnetic spin-gapless semiconductor (FCF-SGS) if the uniform strain applied. However, the metallic fully-compensated ferrimagnetism property of the Mn 2 ZnMg is robust to the tetragonalization. The structure stability based on the calculations of the cohesion energy and the formation energy of this compound has been tested. Furthermore, a magnetic state transition from antiferromagentic (AFM) state to non-magnetic (NM) state can be observed at the lattice constant of 5.20 Å. [ABSTRACT FROM AUTHOR]

In this work, we report the structure and magnetic properties of DyFe 0.6 Mn 0.4 O 3 , which crystallizes in orthorhombic perovskite structure with a space group of Pnma . For DyFe 0.6 Mn 0.4 O 3 , a spin reorientation transition, from the canted antiferromagnetic (AFM) state to a collinear AFM state, is found to occur around 310 K, which is remarkably higher than the corresponding transition in DyFeO 3 . This will greatly facilitate its practical electronic applications near room temperature. More importantly, the AC susceptibility reveals that its frequency-dependent spin reorientation temperature decreases with increasing frequency, which is totally opposite to that of a spin glass. The relaxation time of this process is also much larger than conventional spin glass. The possible mechanism of this distinctive process is explored, which is based on the characteristic feature of spin reorientation for DyFe 0.6 Mn 0.4 O 3 . [ABSTRACT FROM AUTHOR]

Plane-wave pseudo-potential methods based on density functional theory are employed to investigate the electronic structures, magnetic properties of newly designed DO 3 -type XO 3 (X=Li, Na, K and Rb) compounds. Result shows they are d 0 HM ferromagnets with total magnetic moment of 5.00 μ B . Importantly, the d 0 HM characteristic is originated from the polarization of the p -orbitals of O atoms in these hypothetical compounds. The structure stability in the aspects of cohesion energy and formation energy of these four compounds have been tested. The spin-flip gaps of the four XO 3 compounds are quite large (>1.00 eV). Furthermore, the d 0 HM behavior can be maintained in a wide range of lattice constants. [ABSTRACT FROM AUTHOR]

Piezoelectric materials possess the capability to interchangeably convert electrical energy into a mechanical response. While current piezoelectric materials exhibit strong properties, known limitations have inhibited further development. This review describes the ability to combine different piezoelectric materials into a composite to create well-rounded properties. The different types of connectivity classes are described as well as important design considerations and theoretical models. The contributions from the active and passive phases are outlined, focusing primarily on ferroelectric ceramics and polymer-based composites. The key advantage of piezoelectric composites is their ability to combine the flexibility of polymers with the high electromechanical coupling and piezoelectric coefficients of ferroelectric ceramics or single crystals appropriate for a variety of applications. Composites are prominent in medical ultrasound imaging and therapy, underwater acoustic sensing, industrial structural health monitoring, energy harvesting, and numerous other emerging applications. [ABSTRACT FROM AUTHOR]

Ultrathin Co–Co(OH)2 composite nanoflakes have been fabricated through electrodeposition on 3D nickel foam. As electrochemical capacitor electrodes, they exhibit a high specific capacitance of 1000 F g−1 at the scan rate of 5 mV s−1 and 980 F g−1 at the current density of 1 A g−1, respectively, and the retention of capacitance is 91% after 5000 cycles. [ABSTRACT FROM AUTHOR]

The spin reorientation of ErFeO3 that spontaneously occurs at low temperature has been previously determined to be a process involving the continuous rotation of Fe3+ spins. In this work, the dynamic process of spin reorientation in ErFeO3 single crystal has been investigated by AC susceptibility measurements at various frequencies and static magnetic fields. Interestingly, two completely discontinuous steps are induced by a relatively large static magnetic field due to the variation in the magnetic anisotropy during this process. It provides deeper insights into the intriguing magnetic exchange interactions which dominate the sophisticated magnetic phase transitions in the orthoferrite systems. [ABSTRACT FROM AUTHOR]

The topological phenomenon has been extensively studied in condensed matter physics and has attracted much attention in many different fields. Like electrons, phonons can also be studied using critical theorems and topology concepts, giving impetus to the birth of topological phonons. Among the topological phonons, the topological nodal line phonons in crystalline materials have emerged as a new area of rapid development in both experiment and theory. Researchers have been hunting for realistic materials with nodal line phonons for the last four years. To date, however, a timely review of recent advances in topological nodal line phonons, and especially their material realization, is still lacking. Considering the classification of the nodal line states, in this review, we will first review the identification of the materials hosting the nodal line phonons with different degeneracies, different types of dispersion, and different geometric shapes in theory. Moreover, we will review and discuss the reasons for the appearance of the nodal line phonons from the viewpoint of symmetry. Second, we will review the case where the nodal line appears in the projected surface phonon states instead of the bulk phonon states. Third, we will review the experimental material realization of nodal line phonons. Finally, we will present a summary, outlook, and additional notes. We believe that this review will contribute to a more advanced understanding of topological nodal line phonons in solid materials and will offer new perspectives on this rapidly expanding field. [ABSTRACT FROM AUTHOR]

Abstract: K3Li2Nb5O15 (KLN) is fabricated from a peroxide precursor. In the fabrication of the peroxide precursor solution, a hydrogen peroxide aqueous solution (H2O2) reacts with niobium ethoxide, potassium ethoxide, and lithium ethoxide in ethanol solution with a K:Li:Nb ratio of 3:2:5 to form the precursor solution. XRD and Raman spectra of the heat-treated powder show that the pure K3Li2Nb5O15 phase can form at a temperature as low as 500°C. Ferroelectric KLN thin film was also fabricated from this clear precursor solution by spin coating, and it displays ferroelectric polarization hysteresis behavior. It is demonstrated that the solution is a novel precursor for KLN with the advantages of low sintering temperature and simplicity. [Copyright &y& Elsevier]

A magnonic metamaterial in the presence of spatially modulated Dzyaloshinskii–Moriya interaction is theoretically proposed and demonstrated by micromagnetic simulations. By analogy to the fields of photonics, we first establish magnonic Snell's law for spin waves passing through an interface between two media with different dispersion relations due to different Dzyaloshinskii–Moriya interactions. Based on magnonic Snell's law, we find that spin waves can experience total internal reflection. The critical angle of total internal reflection is strongly dependent on the sign and strength of Dzyaloshinskii–Moriya interaction. Furthermore, spin-wave beam fiber and spin-wave lens are designed by utilizing the artificial magnonic metamaterials with inhomogeneous Dzyaloshinskii–Moriya interactions. Our findings open up a rich field of spin waves manipulation for prospective applications in magnonics. [ABSTRACT FROM AUTHOR]

Structural and magnetic properties have been studied in perovskite Nd1-xErxMnO3 (0 ≤ x ≤ 0.5). Er3+ doping enhances the Jahn-Teller distortion, strongly affects the Nd3+-Mn3+ interaction, destroys the intermediate state below the antiferromagnetic transition temperature in NdMnO3, and breaks the antiparallel arrangement between Nd3+ and Mn3+ spin ordering. The decreasing ferromagnetic component in magnetic hysteresis loops at 30 K indicates that the canted angles vary with x. These results offer strong evidence for the interaction between rare earth ions and transition metal ions and competition among rare earth ions as well. [ABSTRACT FROM AUTHOR]

Very recently, a novel Dirac half-metal has been investigated in the perovskite-type lanthanum manganite (LaMnO 3) by Ma et al. [1] and the half metallicity with 100% spin polarization is discovered. More remarkably, multiple linear Dirac crossings are observed around the Fermi energy level in the spin-up direction. Inspired by this work, another perovskite-type material YbBO 3 , which has been synthesized before, is investigated by first principles calculation. Results confirm the presence of half metallicity in this material with also multiple Dirac-like linear and parabolic band crossings around the Fermi level. The estimated Curie temperature is 469.4 K and the mechanic and dynamic stabilities have been verified. Besides, the elastic anisotropy is revealed with the directional dependent Young's modulus and shear modulus, together with the acoustic wave properties. The effect of the uniform strain, electron doping and spin-orbital coupling on the electronic structures have been also accessed. In particular, nearly spin-gapless semiconducting behavior with linear or parabolic energy dispersions is obtained by electron doping. Moreover, several thermodynamic properties have been examined under temperature from 0 to 500 K and pressure from 0 to 5 GPa. In combination, we expect YbBO 3 can attract more research attention and even facilitate the spintronic application. Image 1 • The half metallicity is confirmed with multiple Dirac-like linear and parabolic band crossings around the Fermi level. • Nearly spin-gapless semiconducting behavior is obtained by a small amount of electron doping. • Elastic anisotropy is revealed with the directional dependent Young's modulus and shear modulus. [ABSTRACT FROM AUTHOR]

Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser ablation. Measurements on Pt/BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5 μC/cm2, while the highly (117) oriented film showed a 2Pr value of 54 μC/cm2 at an electrical field of 268 kV/cm and a coercive field Ec of 89 kV/cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49 μC/cm2. [ABSTRACT FROM AUTHOR]

Perovskite DyMn0.33Fe0.67O3 experiences a paramagnetism-antiferromagnetism transition at 450 K and spin reorientation at 290 K. Magnetodielectric properties were studied around the spin reorientation transition. Both giant positive and giant negative magnetodielectric coupling (MDC) were observed near room temperature. The MDC shows strong temperature and frequency dependence, and the sign changes from positive to negative when magnetic state transits from a canted antiferromagnetic state to a collinear antiferromagnetic state. Possible mechanisms are proposed based on the Maxwell-Wagner model, phase transition, the magnetoresistance effect, and spin-phonon coupling. [ABSTRACT FROM AUTHOR]

The study of topological phases with unconventional bulk‐boundary correspondences and nontrivial real Chern number has garnered significant attention in the topological states of matter. Using the first‐principle calculations and theoretical analysis, a high‐throughput material screening of the 3D obstructed atomic insulators (OAIs) and 3D real Chern insulators (RCIs) based on the Samara Carbon Allotrope Database (SACADA) are performed. Results show that 422 out of 703 3D carbon allotropes are 3D OAIs with multiple bulk‐boundary correspondences, including 2D obstructed surface states (OSSs) and 1D hinge states, which are in 1D and 2Ds lower than the 3D bulk, respectively. The 2D OSSs in these OAIs can be modified when subjected to appropriate boundaries, which benefits the investigation of surface engineering and the development of efficient topological catalysts. These 422 OAIs, which have 2D and 1D boundary states, are excellent platforms for multi‐dimensional topological boundaries research. Remarkably, 138 of 422 OAIs are also 3D RCIs, which show a nontrivial real topology in the protection of spacetime inversion symmetry. This work not only provides a comprehensive list of 3D carbon‐based OAIs and RCIs, but also guides their application in various aspects based on multiple bulk‐boundary correspondences and real topological phases. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) van der Waals magnetic materials that host skyrmions are promising candidates for the next-generation memory devices. Here, we have predicted a class of 2D chromium-based monolayer ferromagnetic semiconducting materials with a Curie temperature (Tc) exceeding 320 K. We systematically studied their ferromagnetism and quantum transport properties by employing a combination of density functional calculations, Monte Carlo simulations, atomic spin dynamics simulations, and non-equilibrium Green function methods. These materials display topological magnetic spin texture, i.e., magnetic skyrmions, resulting from the competitions between magnetic anisotropy and Dzyaloshinskii–Moriya interaction (DMI). Furthermore, we observed the generation and annihilation of Néel skyrmion lattice and asymmetric bimeron lattice in the magnetic field, which can be controlled by an external magnetic field. By tuning the detailed spin configurations and skyrmion density, we can effectively manipulate the signs and magnitudes of the topological Hall conductance. Our results demonstrate the tunable topology and magnetism of the discovered 2D vdW CrXY3 materials, paving the way for skyrmion-based spintronic devices. [ABSTRACT FROM AUTHOR]

Enhancing the energy storage performance of dielectric material through the adoption of a novel domain strategy is highly desirable. In this study, Bi0.5Na0.5TiO3‐based thin films are fabricated with topological vortex domains (VDs) by controlling the grain size and investigated the correlation between these VDs and the macroscopic polarization response, which is crucial for the energy storage performance. The emergence of VDs, in contrast to conventional ferroelectric domains, promotes polarization reversal in dielectric materials. Additionally, in contrast to the severely reduced saturation polarization typically noted in conventional relaxor ferroelectrics (RFE), the presence of VDs in RFE leads to only a slight reduction in saturation polarization. These two advantages contribute to the superior energy storage performance of the films with VDs. This approach offers a novel and promising direction for developing dielectrics with high‐energy storage capabilities. [ABSTRACT FROM AUTHOR]

References 1 Kim H.-G., Hong D.-H., Yoo J.-H., Lee H.-C. Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition. They demonstrated that Sm SB 2 sb O SB 3 sb /Al SB 2 sb O SB 3 sb /InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices in the future. 35893484 5 Wang W., Qian J., Geng C., Fan M., Yang C., Lu L., Cheng Z. Flexible Lead-Free Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 Dielectric Film Capacitor with High Energy Storage Performance. [Extracted from the article]

Developing accurate descriptors for oxygen evolution reaction (OER) is of great significance yet challenging, which roots in and also boosts the understanding of its intrinsic mechanisms. Despite various descriptors are reported, it still has limitations in the facile prediction, given that complicated analytical techniques as well as time‐consuming modeling and calculations are indispensable. In the present work, strong correlation of magnetic property with OER performance is revealed by in‐depth investigations on the crystal and electronic structures. A facile descriptor of Curie/Neel temperature (TC/N) is developed for La2−xSrxCo2O6−δ perovskite oxides, based on the inference that both magnetism and OER are rooted in the electron exchange interaction. Specifically, both the TC/N and OER activity are proportional to the degree of p‐d orbital hybridization, which increases with enlarged bond angle of Co─O─Co and/or increased oxidation of Co. This finding reveals that TC/N from magnetic characterizations is an effective descriptor in designing novel OER electrocatalysts, and interdisciplinary researches are advantageous for revealing the controversial mechanisms of OER process. [ABSTRACT FROM AUTHOR]

2D second‐order topological insulators (SOTIs) have sparked significant interest, but currently, the proposed realistic 2D materials for SOTIs are limited to nonmagnetic systems. In this study, for the first time, a single layer of chalcogenide CrSiTe3—an experimentally realized transition metal trichalcogenide is proposed with a layer structure—as a 2D ferromagnetic (FM) SOTI. Based on first‐principles calculations, this study confirms that the CrSiTe3 monolayer exhibits a nontrivial gapped bulk state in the spin‐up channel and a trivial gapped bulk state in the spin‐down channel. Based on the higher‐order bulk–boundary correspondence, it demonstrates that the CrSiTe3 monolayer exhibits topologically protected corner states with a quantized fractional charge (e3$\frac{e}{3}$) in the spin‐up channel. Notably, unlike previous nonmagnetic examples, the topological corner states of the CrSiTe3 monolayer are spin‐polarized and pinned at the corners of the sample in real space. Furthermore, the CrSiTe3 monolayer retains SOTI features when the spin–orbit coupling (SOC) is considered, as evidenced by the corner charge and corner states distribution. Finally, by applying biaxial strain and hole doping, this study transforms the magnetic insulating bulk states into spin‐gapless semiconducting and half‐metallic bulk states, respectively. Importantly, the topological corner states persist in the spin‐up channel under these conditions. [ABSTRACT FROM AUTHOR]

The fundamental topological theory, the historical development, the material realization, potential applications, and future outlooks of magnetic 2D topological materials. [Display omitted] Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field. [ABSTRACT FROM AUTHOR]

Micrometre-sized pure BiFeO 3 (BF) and Ce-doped Bi 0.9 Ce 0.1 FeO 3 (BCF) powders were synthesized by using conventional hydrothermal (H) and microwave assisted hydrothermal (MH) methods. The BF-H and BCF-H show obviously enhanced weak ferromagnetic characteristic, in which the BCF-H exhibits excellent magnetic performance, with significantly increased maximum magnetization of ∼3.6 emu/g (under 50 kOe magnetic field) and remanent magnetization of ∼0.268 emu/g at room temperature. The superior magnetic property of BCF-H could be attributed to the suppression of spiral structure and the modulation of canting angle of spins in antiferromagnetic sublattices. [ABSTRACT FROM AUTHOR]

Lead-free (1- x)Ba(Ti 0.8 Zr 0.2)O 3 - x (Ba 0.7 Ca 0.3)TiO 3 (BZT-BCT) possesses comparable piezoelectric constant with lead zirconate titanate (PZT), but its poor temperature electric performances stability and low Curie temperature limit its application. Here we designed composition graded BZT-BCT films with improved temperature stability of piezoelectric, ferroelectric, and dielectric performances over a wide temperature range, and the d 33 reaches 21 pm/V with hysteresis loop even at 180 °C, which is far above the Curie temperature of BZT-BCT ceramic and BZT-0.5BCT film. The excellent temperature stability is ascribed to the lattice distortion and strain gradient in the grains caused by ions diffusion, and could suppress phase transition. This work could bring forward a feasible design for dielectric/piezoelectric/ferroelectric devices operating in harsh temperature environment. [ABSTRACT FROM AUTHOR]

The band topology in condensed matter has attracted widespread attention in recent years. Due to the band inversion, topological nodal line semimetals (TNLSs) have band crossing points (BCPs) around the Fermi level, forming a nodal line. In this work, by means of first-principles, we observe that the synthesized NaAlGe intermetallic compound with anti -PbFCl type structure is a TNLS with four NLs in the k z = 0 and k z = π planes. All these NLs in NaAlGe exist around the Fermi level, and what is more, these NLs do not overlap with other bands. The exotic drum-head-like surface states can be clearly observed, and therefore, the surface characteristics of NaAlGe may more easily be detected by experiments. Biaxial strain has been explored for this system, and our results show that rich TNL states can be induced. Furthermore, the spin-orbit coupling effect has little effect on the band structure of NaAlGe. It is hoped that this unique band structure can soon be examined by experimental work and that its novel topological elements can be fully explored for electronic devices. [ABSTRACT FROM AUTHOR]

Due to its physical and chemical stability in addition to its transparency in the visible region with ultraviolet protective activity, ZnO can be used in sunscreen applications. In our article, Na-doped zinc oxide nanoparticles were prepared in different concentrations by sol–gel and solvothermal techniques to reduce their photocatalytic activity. The photocatalytic activity of the doped samples was suppressed effectively at a concentration of 0.03 at% Na doping up to 90% by conducting the sol–gel process rather than the solvothermal process which resulted in about 70% photocatalytic reduction in a period of time from (0–30 min) when exposed to ultraviolet and visible light. In addition, the nanoparticles resulted by sol–gel route show a reduction in photoactivity under solar simulation about 98% rather than those resulted via solvothermal process which shows a reduction around 92% for 30 min which is the same period of time used for the photocatalytic degradation test. The particle size was around 64.6–84.6 nm for samples prepared by both methods. [ABSTRACT FROM AUTHOR]

Very recently, searching for new topological nodal line semimetals (TNLSs) and drum-head-like (DHL) surface states has become a hot topic in the field of physical chemistry of materials. Via first principles, in this study, a synthesized CsCl type binary alloy, TiOs, was predicted to be a TNLS with three topological nodal lines (TNLs) centered at the X point in the k x/y/z = π plane, and these TNLs, which are protected by mirror, time reversal (T) and spatial inversion (P) symmetries, are perpendicular to one another. The exotic drum-head-like (DHL) surface states can be clearly observed inside and outside the crossing points (CPs) in the bulk system. The CPs, TNLs, and DHL surface states of TiOs are very robust under the influences of uniform strain, electron doping, and hole doping. Spin-orbit coupling (SOC)-induced gaps can be found in this TiOs system when the SOC is taken into consideration. When the SOC is involved, surface Dirac cones can be found in this system, indicating that the topological properties are still maintained. Similar to TiOs, ZrOs and HfOs alloys are TNLSs under the Perdew-Burke-Ernzerhof method. The CPs and the TNLs in both alloys disappear, however, under the Heyd-Scuseria-Ernzerhof method. It is hoped that the DHL surface property in TiOs can be detected by surface sensitive probes in the near future. [ABSTRACT FROM AUTHOR]

Dielectric capacitors with high energy storage performance are in great demand for emerging advanced energy storage applications. Relaxor ferroelectrics are one type dielectric materials possessing high energy storage density and energy efficiency simultaneously. In this study, 0.9(Sr0.7Bi0.2)TiO3–0.1Bi(Mg0.5Me0.5)O3 (Me = Ti, Zr, and Hf) dielectric relaxors are designed and the corresponding energy storage properties are investigated. The excellent recoverable energy density of 3.1 J/cm3 with a high energy efficiency of 93% is achieved at applied electric field of 360 kV/cm for 0.9(Sr0.7Bi0.2)TiO3–0.1Bi(Mg0.5Hf0.5)O3 (0.9SBT–0.1BMH) ceramic. High breakdown strength of 460 kV/cm in 0.9SBT–0.1BMH ceramic is obtained by Weibull distribution with satisfied reliability. In addition, 0.9SBT–0.1BMH shows outstanding thermal stability of energy storage performance up to 200°C, with the variation being less than 5%, together with satisfying cycling stability and high charge‐discharge rate, making the 0.9SBT–0.1BMH ceramic a potential lead‐free candidate for high power energy storage applications at elevated temperature. [ABSTRACT FROM AUTHOR]

Bi2Se3, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer Bi2Se3 nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of Bi2Se3 is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of Bi2Se3 two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the Bi2Se3 nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer Bi2Se3 nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators. [ABSTRACT FROM AUTHOR]

The conceptual framework of topological states has recently been extended to bosonic systems, particularly phononic systems. In this work, we chose the recently experimentally prepared two-dimensional (2D) Kekulé-order graphene as a target to propose the coexistence of gapless and gapped topological phonon states in its phonon curves. This is the first work to investigate rich gapped and gapless topological phonon states in experimentally feasible 2D materials. For the gapped topological phonons, 2D Kekulé-order graphene hosts phononic real Chern insulator states, i.e., second-order topological states, and corner vibrational modes inside frequency gaps at 27.96 and 37.065 THz. For the gapless topological phonons, 2D Kekulé-order graphene hosts a phononic Weyl pair [comprising two linear Weyl points (LWPs)] and a phononic Weyl complex [comprising one quadratic nodal point (QNP) and two LWPs] around 7.54 and 47.3 THz (39.2 THz), respectively. Moreover, the difference between the phononic Weyl pair and the phononic Weyl complex was investigated in detail. Our study not only promotes 2D Kekulé-order graphene as a concrete material platform for exploring the intriguing physics of phononic second-order topology but also proposes the coexistence of different categories of Weyl phonons, i.e., a Weyl complex that comprises two LWPs and one QNP, in two dimensions. Our work paves the way for new advancements in topological phononics comprising gapless and gapped topological phonons. [ABSTRACT FROM AUTHOR]

In harsh environments, the piezoelectric devices with critical component of high-temperature piezoelectric materials are in great demand. BiScO 3 -PbTiO 3 ceramics with large piezoelectric coefficient (d 33) and high Curie temperature (T c), shows a high-level dissipation factor (tanδ), causing serious self-heating. Here, a multiple-level approach, that is, regulation of phase and domain structures, domain pinning by isolated defects, and enlargement of the activation energy, is proposed to achieve a well-balanced piezoelectric performance. Based on this strategy, novel BiScO 3 -PbTiO 3 -(Sr 0.7 Bi 0.2)TiO 3 +MnO 2 ceramics (Mn:BS-PT-SBT) were fabricated. Among them Mn:BS-0.62PT-0.03SBT displays an ultralow tanδ of 1.62% at 200 °C, a large d 33 of 358 pC N−1, and a high T c of 425 °C. Moreover, the fabricated acoustic emission sensor maintains a high amplitude of 99 dB within 25–200 °C, and the emission transducer has a large residual power ratio twice that of commercial P-5 G at 200 °C. This study provides an effective route for designing piezoelectric ceramics that operate competitively at high temperatures. [ABSTRACT FROM AUTHOR]

Origins of the unipolar strain, strain hysteresis, and remnant strain of Mn-modified BF-BT ceramics near the pseudo-cubic and rhombohedral (PC-R) phase boundary, before and after poling treatments, were investigated by high-energy synchrotron X-ray diffraction. The largest unipolar strain of BF-BT ceramics was found to occur at the composition with a single pseudo-cubic phase, rather than the phase boundary composition, owing to the synergetic contributions from the reversible phase transition of PC-R phase, non-180° domain switching, and lattice distortion. It is interesting to find that the phase boundary composition exhibits an irreversible PC-R phase transition, where its unipolar strain after poling is attributed to the lattice distortion. The lowest strain hysteresis and remnant strain were observed in BF-BT ceramics with rhombohedral phase, due to the fact that the reversible lattice distortion dominates the strain level. These new findings on BF-BT solid solutions are expected to provide new insights on the strain mechanisms of perovskite-structured ferroelectric materials. [ABSTRACT FROM AUTHOR]

The double perovskites Nd(Zn 0.5+ x Ti 0.5)O 3 (x = 0.05, 0.03, 0.01, 0, −0.01, −0.03 and −0.05) have been prepared successfully by conventional route for mixing oxides. The influences of Zn nonstoichiometry on the phase composition, microstructure and microwave dielectric properties have been systematically discussed. A small amount of Zn nonstoichiometry (−0.01 ≤ x ≤ 0.03) did not change the phase composition but a large amount of Zn excess (x = 0.05) and deficient (x = –0.03 and −0.05) caused the appearances of secondary phases Zn 2 TiO 4 and Nd 2 Ti 2 O 7 , respectively. A significant difference in grain size could be observed in the Zn nonstoichiometry ceramics. The sinterability and density were reduced due to the presence of the impurity phase Nd 2 Ti 2 O 7 for the Zn–deficient ceramics, while Nd 2 Ti 2 O 7 could adjust temperature coefficient of resonant frequency (τ f) to near–zero. The τ f of the Nd(Zn 0.5+ x Ti 0.5)O 3 (x = −0.05–0.05) ceramics was significantly affected by the Zn nonstoichiometry. After sintered at 1360 °C for 4 h, the nonstoichiometric Nd(Zn 0.51 Ti 0.5)O 3 ceramics showed favorable microwave dielectric properties: dielectric constant ε r = 36.41, quality factor Q × f = 182650 GHz, and τ f = −26.5 ppm/oC and the Nd(Zn 0.47 Ti 0.5)O 3 ceramics possessed a near-zero τ f value of −5.6 ppm/oC, accompanying by a high ε r and a moderate Q × f (ε r = 27.75, Q × f = 47820 GHz). • The nonstoichiometric Nd(Zn 0.5+ x Ti 0.5)O 3 ceramics are prepared by solid-state route. • Large amount of Zn excess or deficient causes the appearances of secondary phases. • A significant difference in grain size can be observed. • A temperature stable dielectric material is developed. [ABSTRACT FROM AUTHOR]

Spin-gapless semiconductors (SGSs), the new generation of spintronic materials, have received increasing attention recently owing to their various attractive properties such as fully spin-polarization and high carrier mobility. Based on their unique band structures, SGSs can be divided into two types: parabolic and Dirac-like linear. The linear-type SGSs, also called Dirac SGSs (DSGSs), have real massless fermions and dissipation-less transport properties, and thus are regarded as promising material candidates for applications in ultra-fast and ultra-low-power spintronic devices. DSGSs can be further classified into p-state type or d-state type depending on the degree of contribution of either the p-orbitals or d-orbitals to the Dirac states. Considering the importance of the research field and to cover its fast development, we reviewed the advances in DSGSs and proposed our own viewpoints. First, we introduced the computational algorithms of SGSs. Second, we found that the boundaries between DSGSs and Dirac half-metals were frequently blurred. Therefore, a simple classification is proposed in this work. Third, we collected almost all the studies on DSGSs published in the past six years. Finally, we proposed new guidance to search for DSGSs among 3D bulk materials on the basis of our latest results. [ABSTRACT FROM AUTHOR]

A series of Aurivillius-phase Bi 5 Ti 3 XO 15 (X = Cu, Mn, Ni, V) (BTXO: BTCuO, BTMnO, BTNiO and BTVO) were successfully prepared using a modified micro-pulling down method and their electric and magnetic properties were carefully studied. BTVO is ferroelectric at room temperature with a diamagnetic behavior due to the absence of magnetic ions in the compound. BTCuO and BTNiO show apparent ferroelectric behavior at room temperature (RT), contrarily to BTMnO which shows negligible polarization. In terms of their magnetic properties, BTMnO is a weak ferromagnetic (canted antiferromagnetic) at temperatures below 19 K, while BTCuO and BTNiO are basically paramagnetic at low temperature and possible with a short-range magnetic ordering at RT. We do not have any evidence showing the coexistence of both ferroelectric polarization and long range magnetic ordering in any of these compounds. [ABSTRACT FROM AUTHOR]

Dielectric capacitors with high power densities are crucial for pulsed electronic devices and clean energy technologies. However, their breakdown strengths (Eb) strongly limit their power densities. Herein, by modifying the interfacial polarization by adjusting the difference in activation energies (Δϕ) between the grain and grain boundary phases, the significant enhancement of Eb in the (1‐x)(0.94Na0.5Bi0.5TiO3‐0.06BaTiO3)‐xCa0.7La0.2TiO3 (NBT‐BT‐xCLT, x = 0, 0.18, 0.23, 0.28, 0.33, 0.38, and 0.43) ceramics is achieved. The results indicate that adding CLT introduces a super‐paraelectric state, refines grain size, and, most importantly, decreases the Δϕ value. When Δϕ is tuned close to zero in the specific NBT‐BT‐0.38CLT sample, a significant boost in Eb value of 64 kV mm−1 is obtained. As a result, the recoverable energy storage density of the ceramics reaches an unprecedented giant value of 15.1 J cm−3 together with a high efficiency of 82.4%, as well as ultrafast discharge rate of 32 ns, and high thermal and frequency stability. The results demonstrate that interfacial polarization engineering holds huge promise for the development of dielectrics with high‐energy‐storage performance. [ABSTRACT FROM AUTHOR]

In this paper, we have investigated the electronic, magnetic, half-metallic and mechanical properties of a new Zr-based equiatomic quaternary Heusler (EQH) compound ZrRhTiTl by means of the first-principles calculations. With the help of the generalized gradient approximation (GGA) in the scheme of Perdew-Burke-Enzerhof (PBE), we reveal that the ZrRhTiTl is an excellent half-metallic material (HMM) at its equilibrium lattice constant 6.70 Å. In the minority-spin direction, a quite large band gap (E bg ) of 0.584 eV and a half-metallic band-gap (E HM ) of 0.137 eV can be observed. For ZrRhTiTl, the formation energy of −1.18 eV and the cohesive energy of 19.35 eV suggest that it is a thermo-stabilized material in theory. The formation mechanism of E HM in the minority-spin direction has also been discussed by considering of the possible d - d hybridization between Zr, Ti and Rh elements. The total magnetic moment of ZrRhTiTl is 2 μ B and it satisfies the famous Slater-Pauling rule M t = Z t -18. Two types of strain, i.e., uniform strain and tetragonal deformation, have been taken into account to examine the magneto-electronic and half-metallic behaviors of ZrRhTiTl EQH compound. Finally, we show that ZrRhTiTl is mechanically stable, ductile and anisotropic. [ABSTRACT FROM AUTHOR]

Finding novel half-metallic materials (HMMs) with Heusler structure is a focus of current research. Therefore, in this work, we aim to predict new HMMs in some rare-earth-element-contained equiatomic quaternary Heusler (EQH) compounds by using the first-principle calculations. In detail, the structural, electronic, magnetic, mechanical and half-metallic properties of LuFeMnZ (Z = Al, Ga), YFeMnZ (Z = Al, Ga), LuCoCrZ (Z = Si, Ge) and LaCoCrAl compounds were investigated. The calculated results showed that all the above-mentioned compounds are HMMs with complete spin polarisation around the Fermi level. The half-metallic behaviour, the spin-flip gaps and the total and atomic magnetic moments of these compounds for different lattice constants were also studied in detail. LuCoCrSi and LuCoCrGe compounds showed the largest spin-flip gaps of 0.42 eV at its equilibrium lattice constant and 0.39 eV at its strained lattice constant, respectively. Importantly, HMMs with a unique zero gap in one spin channel have also drawn much research attention in recent years. In the current work, the highly dispersive zero-gap half-metallic properties of LuCoCrGe compound were observed, when its lattice constant was extended to 6.70 and 6.80 Å. Finally, the mechanical stability and the phase stability of the above-mentioned compounds were analysed in detail. [ABSTRACT FROM AUTHOR]

A low-energy collective excitation mode in charge-ordered multiferroic LuFe2O4 is reported via terahertz time-domain spectroscopy. Upon cooling from 300 to 40 K, the central resonance frequency showed a pronounced hardening from 0.85 to 1.15 THz. In analogy to the well-known low-energy optical properties of LuFe2O4, this emerging resonance was attributed to the charge-density-wave (CDW) collective excitations. By using the Drude-Lorentz model fitting, the CDW collective mode becomes increasingly damped with the increasing temperature. Furthermore, the kinks of the CDW collective mode at the magnetic transition temperature are analyzed, which indicate the coupling of spin order with electric polarization. [ABSTRACT FROM AUTHOR]

BiFeO3, a typical multiferroic compound, owns complicated interactions among its charge, lattice, and spin degrees, while largely remaining a mystery. In this work, the BiFeO3 single crystal has been investigated in pulsed high magnetic fields up to 50 T. The lattice, spin, and charge orderings are found to couple with each other strongly. High magnetic field could drive the spin cycloid phase to a canted antiferromagnetic phase while accompanied by a clear magnetostriction response and weakening of ferroelectric polarization. The critical magnetic field for the magnetic phase transition was shifted to the lower magnetic field region by an external electric field over a broad temperature range, which indicates the complex interaction among magnetization, electrical polarization, and crystal lattice. This work has provided a clear picture to show the synergetic response of multiple ordering parameters during the magnetic phase transition in BiFeO3, which could benefit the design of BiFeO3 based spintronic devices and novel multiferroic materials with strong magnetoelectric coupling. [ABSTRACT FROM AUTHOR]