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CMOS broad-band compact high-linearity binary phase-shift keying (BPSK) and IQ modulators are proposed and analyzed in this paper. The modulators are constructed utilizing a modified reflection-type topology with the transmission lines implemented on the thick Si[O.sub.2] layer to avoid the lossy silicon substrate. The monolithic microwave integrated circuit (MMIC) chips were fabricated using standard bulk 0.13-[micro]m MS/RF CMOS process and demonstrated an ultracompact layout with more than 80% chip size reduction. The broadside couplers and 180[degrees] hybrid for the modulators in the CMOS process are broad-band designs with low phase/amplitude errors. The dc offset and imbalance for the proposed topology are investigated and compared with the conventional reflection-type modulators. The measured dc offset was improved by more than 10 dB. Both BPSK and IQ modulators feature a conversion loss of 13 dB, a modulation bandwidth of wider than 1 GHz, and second- and third-order spur suppressions of better than -30 dBc. The IQ modulator shows good sideband suppression with high local-oscillator suppression from 20 to 40 GHz. The modulators are also evaluated with a digital modulation signal and demonstrate excellent modulator quality and adjacent channel power ratio. Index Terms--Binary phase-shift keying (BPSK), CMOS, coupler, millimeter wave (MMW), quadrature amplitude modulator (QAM).

A high quality 90-nm CMOS-based technology portfolio suitable for various radio frequency (RF) IC applications is presented. Layout-optimized radio frequency (RF) components are studied in detail including state-of the art-90 nm RFMOS devices with 120-160 GHz fT and very low noise figures.

In this letter, four substrate noise isolation structures in standard 0.18-µm SiGe bipolar CMOS technology were investigated using S-parameter measurements. The experimental and simulated results on different isolation structures, such as triple-well p-n junction isolated walls, deep trench isolation, and double P+ guard-ring structures, are presented. Each element in the equivalent circuits has been calculated or fitted based on the parasitic resistance, capacitance, and physical dimensions using the device simulator MEDICI and the measured results of the test patterns. The proposed structure B significantly reduced substrate noise below -70 dB up to 20 GHz. The proposed structure C with an extra triple-well junction achieved the best isolation at the lower frequency range, in which ∣S21∣ was less than -71 dB from 50 MHz to 10.05 GHz, and -56 dB from 10.05 to 20.05 GHz. The measured results showed an excellent agreement with the calculations. Structure B is good enough and is recommended for a general-purpose RF circuit design, whereas structure C can be used in a highly sensitive RF circuit block below 10 GHz. [ABSTRACT FROM AUTHOR]

CMOS broad-band compact high-linearity binary phase-shift keying (BPSK) and IQ modulators are proposed and analyzed in this paper. The modulators are constructed utilizing a modified reflection-type topology with the transmission lines implemented on the thick SiO2 layer to avoid the lossy silicon substrate. The monolithic microwave integrated circuit (MMIC) chips were fabricated using standard bulk 0.13-μm MS/RF CMOS process and demonstrated an ultracompact layout with more than 80% chip size reduction. The broadside couplers and 180° hybrid for the modulators in the CMOS process are broad-band designs with low phase/amplitude errors. The dc offset and imbalance for the proposed topology are investigated and compared with the conventional reflection-type modulators. The measured dc offset was improved by more than 10 dB. Both BPSK and IQ modulators feature a conversion loss of 13 dB, a modulation bandwidth of wider than 1 GHz, and second- and third-order spur suppressions of better than -30 dBc. The IQ modulator shows good sideband suppression with high local-oscillator suppression from 20 to 40 GHz. The modulators are also evaluated with a digital modulation signal and demonstrate excellent modulator quality and adjacent channel power ratio. [ABSTRACT FROM AUTHOR]