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145 results on '"Chi, D.Z."'

31. Optical and electrical characterization of sputter-deposited Fe[Si.sub.2] and its evolution with annealing temperature

Author

Tan, K.H., Chi, D.Z., and Pey, K.L.

Subjects
Iron -- Electric properties, Iron -- Optical properties, Silicon compounds -- Electric properties, Silicon compounds -- Optical properties, Thermal analysis, Physics
Abstract

The electrical and optical properties of sputter-deposited Fe[Si.sub.2] thin films on p-Si(100) and Si[O.sub.2]/p-Si(100) substrates as well as their evolution with rapid thermal annealing (RTA) temperature are examined. The carrier mobility has increased with decreasing residual carrier concentration when the RTA temperature is increased.

Published
2008

32. Assignment of deep levels causing yellow luminescence in GaN

Author

Soh, C.B., Chua, S.J., Lim, H.F., Chi, D.Z., Tripathy, S., and Liu, W.

Subjects
Luminescence -- Usage, Gallium nitrate -- Research, Gallium nitrate -- Thermal properties, Physics
Abstract

The deep levels in GaN associated with yellow luminescence transitions are examined. The effect of thermal annealing on the yellow luminescence (YL) related deep levels are discussed.

Published
2004

33. Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al(sub sub 0.4Ga(sub 0.6)N/GaN heterojunction metal-insulator-semiconductor structures

Author

Chen, P., Chua, S.J., Wang, W.D., Chi, D.Z., Miao, Z.L., and Zheng, Z.L.

Subjects
Chemical vapor deposition -- Analysis, Gallium compounds -- Research, Physics
Abstract

A SiO2 film is deposited on a metalorganic chemical vapor deposition-grown GaN/Al(sub 0.4)Ga(sub 0.6)N/ GaN double heterojunction, to fabricate GaN-based metal-insulator-semiconductor (MIS) structures. Interface states have little influence on the sample, as indicated by various-frequency C-V and G-V behaviors.

Published
2003

34. Reverse current transport mechanism in shallow junctions containing silicide spikes

Author

Chi, D.Z., Wang, W.D., Chua, S.J., and Ashok, S.

Subjects
Silicides -- Properties, Silicides -- Analysis, Physics
Abstract

A discussion and proposal of a physical model that describes the current transport mechanism in shallow si p-n junctions containing silicide spikes is proposed and discussed. The model allows extraction of important parameters of such shallow junctions, such as the average radius of the silicide spikes.

Published
2002

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