1. Highly sensitive detection of H2O adsorbed on Si(111)7 × 7 and Si(100)2 × 1 surfaces by means of slow highly charged Xe ions
- Author
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Satoshi Takahashi, Nobuyuki Nakamura, Chikashi Yamada, Makoto Sakurai, Masahide Tona, and Shunsuke Ohtani
- Subjects
Materials science ,Silicon ,Proton ,Analytical chemistry ,Highly charged ion ,chemistry.chemical_element ,02 engineering and technology ,Surfaces and Interfaces ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Ion ,Secondary ion mass spectrometry ,chemistry ,Yield (chemistry) ,Desorption ,Materials Chemistry ,Irradiation ,0210 nano-technology - Abstract
The proton yields from Si(111)7 × 7 and Si(100)2 × 1 reconstructed surfaces irradiated with slow ( v 0.25 v Bohr ) highly charged Xe ions are obtained. H 2 O molecules adsorbed over time on the surfaces at room temperature, under ultra-high vacuum can be detected as an increase of the proton yield. For the Si(100)2 × 1 surface, the proton yield with HCI-irradiation time is discussed based on temporal variation of the H 2 O coverage. The proton desorption efficiency with Xe 50 + is more than about ten times and twice as compared with Xe 29 + and Xe 44 + , respectively. For the Si(111)7 × 7 and Si(100)2 × 1 surfaces, the proton yield in each time increases with the charge states q to the power of 6 and 4, respectively, and is changed with time with the power laws held on.
- Published
- 2021
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