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2. Erratum: “Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes” [AIP Adv. 11, 065315 (2021)]

3. Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

4. Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

5. Gain spectrum measurement using the segmented contact method with an integrated optical amplifier.

7. Analysis of 1.2 μm InGaAs/GaAs quantum dot laser for high power applications.

20. Broad bandwidth emission from hybrid QW/QD structures

44. 1.3¿m Quantum Dot Self-Aligned Stripe Laser

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