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2. High-resolution crystal structures of delta-5-3-ketosteroid isomerase with and without a reaction intermediate analogue

Author

Kim, Suhng Wook, Cha, Sun-Shin, Cho, Hyun-Soo, Kim, Jeong-Sun, Ha, Nam-Chul, Cho, Moon-Ju, Joo, Soyoung, Kim, Kyeong Kyu, Choi, Kwan Yong, and Oh, Byung-Ha

Subjects
Hydrogen bonding -- Research, Biological sciences, Chemistry
Abstract

The crystal structures of bacterial delta-5-3-ketosteroid isomerase (KSI) from Pseudomonas putida and of the enzyme in complex with equilenin indicate that the side chains of Tyr14 and Asp99 create hydrogen bonds directly with the oxyanion of the bound inhibitor in a totally apolar milieu of the active site. The only polar atoms close to the short, very strong (low-barrier) hydrogen bond (LBHB) are the Tyr55 OH and the Asp99 O-delta-2. The characteristic resonance of the LBHB was seen even when directly competing H-bonding donors were present.

Published
1997

7. Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

Author

Veloso, Anabela, primary, Boccardi, Guillaume, additional, Ragnarsson, Lars-Åke, additional, Higuchi, Yuichi, additional, Arimura, Hiroaki, additional, Lee, Jae Woo, additional, Simoen, Eddy, additional, Cho, Moon Ju, additional, Roussel, Philippe J., additional, Paraschiv, Vasile, additional, Shi, Xiaoping, additional, Schram, Tom, additional, Chew, Soon Aik, additional, Brus, Stephan, additional, Dangol, Anish, additional, Vecchio, Emma, additional, Sebaai, Farid, additional, Kellens, Kristof, additional, Heylen, Nancy, additional, Devriendt, Katia, additional, Dekkers, Harold, additional, Van Ammel, Annemie, additional, Witters, Thomas, additional, Conard, Thierry, additional, Vaesen, Inge, additional, Richard, Olivier, additional, Bender, Hugo, additional, Athimulam, Raja, additional, Chiarella, Thomas, additional, Thean, Aaron, additional, and Horiguchi, Naoto, additional

Published
2014
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9. Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

Author

Lee, Jae Woo, primary, Simoen, Eddy, additional, Veloso, Anabela, additional, Cho, Moon Ju, additional, Arimura, Hiroaki, additional, Boccardi, Guillaume, additional, Ragnarsson, Lars-Ake, additional, Chiarella, Thomas, additional, Horiguchi, Naoto, additional, Thean, Aaron, additional, and Groeseneken, Guido, additional

Published
2013
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10. A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond.

Author

Ritzenthaler, Romain, Schram, Tom, Spessot, Alessio, Caillat, Christian, Aoulaiche, Marc, Cho, Moon Ju, Noh, Kyoung Bong, Son, Yunik, Na, Hoon Joo, Kauerauf, Thomas, Douhard, Bastien, Nazir, Aftab, Chew, Soon Aik, Milenin, Alexey P., Altamirano-Sanchez, Efrain, Schoofs, Geert, Albert, Johan, Sebai, Farid, Vecchio, Emma, and Paraschiv, Vasile

Subjects
COMPLEMENTARY metal oxide semiconductors, DYNAMIC random access memory, STRAY currents, LOGIC circuits, METAL oxide semiconductor field-effect transistors, THERMAL stability
Abstract

In this paper, a low-cost and low-leakage gate-first high- \(k\) metal-gate CMOS integration compatible with the high thermal budget used in a 2× node dynamic random access memory process flow is reported. The metal inserted polysilicon stack is based on HfO2 coupled with Al2O3 capping for pMOS devices, and with a TiN/Mg/TiN stack together with As ion implantation for nMOS. It is demonstrated that n and pMOS performance of 400 and 200 \(\mu \) A/ \(\mu \) m can be obtained for an OFF-state current of \(10^{-10}\) A/ \(\mu \) m, while maintaining gate and junction leakages compatible with low-power applications. Reliability and matching properties are aligned with logic gate-stacks, and the proposed solution is outperforming the La-cap-based solutions in terms of thermal stability. [ABSTRACT FROM AUTHOR]

Published
2014
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11. Crystal Structure of a Maltogenic Amylase Provides Insights into a Catalytic Versatility

Author

Kim, Jeong-Sun, primary, Cha, Sun-Shin, additional, Kim, Hyun-Ju, additional, Kim, Tae-Jip, additional, Ha, Nam-Chul, additional, Oh, Sang-Taek, additional, Cho, Hyun-Soo, additional, Cho, Moon-Ju, additional, Kim, Myo-Jeong, additional, Lee, Hee-Seob, additional, Kim, Jung-Wan, additional, Choi, Kwan Yong, additional, Park, Kwan-Hwa, additional, and Oh, Byung-Ha, additional

Published
1999
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14. Corrections

Author

Kim, Suhng Wook, Cha, Sun-Shin, Cho, Hyun-Soo, Kim, Jeong-Sun, Ha, Nam-Chul, Cho, Moon-Ju, Joo, Soyoung, Kim, Kyeong Kyu, Choi, Kwan Yong, and Oh, Byung-Ha

Subjects
Crystals -- Structure, Isomerases -- Physiological aspects, Biological sciences, Chemistry
Published
1998

16. (Invited) Replacement Metal Gate/High-k Last Technology for Aggressively Scaled Planar and FinFET-Based Devices

Author

Veloso, Anabela, Woo, Jae, Simoen, Eddy, Ragnarsson, Ake, Arimura, Hiroaki, Cho, Moon Ju, Boccardi, Guillaume, Thean, Aaron, and Horiguchi, Naoto

Abstract

This work reports on aggressively scaled replacement metal gate, high-k last (RMG-HKL) planar and FinFET-based devices using a novel effective work function (EWF) engineering approach which relies on controlled diffusion mechanisms in the gate stack and enables wide VT modulation [>500 mV DVT in narrow-fin (WFin[?]5 nm), triple-gate FinFETs], with no EOT nor JG penalty, improved mobility and reliability, excellent mismatch performance, up to ~6.3x reduced noise, and minimized parasitic gate resistance. Additionally, we present a thorough evaluation of the impact of post high-k deposition thermal (PDA) and plasma (SF6) treatments for planar vs. FinFET devices with different Si crystal orientations, providing a deeper insight into underlying degradation mechanisms. SF6 enables improved mobility and reduced interface trapped charge density (Nit), helping to mitigate the impact of fin patterning and fin sidewall crystal orientations, while allowing a simplified dual-EWF metal CMOS scheme suitable for both device architectures. PDA results in substantially improved reliability behavior due to bulk defects reduction.

Published
2014

18. (Invited) Gate-All-Around Nanowire FETs vs.Triple-Gate FinFETs: On Gate Integrity and Device Characteristics

Author

Veloso, Anabela, Cho, Moon Ju, Simoen, Eddy, Hellings, Geert, Matagne, Philippe, Collaert, Nadine, and Thean, Aaron

Abstract

This work reports a comprehensive evaluation of lateral gate-all-around (GAA) nanowire (NW) FETs vs.triple-gate finFETs, with both types of devices built with various doping schemes, and with GAA-NWFETs outperforming others per footprint. Optimized junctionless (JL) GAA-NWFETs exhibit excellent electrostatics and smaller IOFFvalues. They also yield ring oscillators with substantially lower power dissipation, while showing considerably longer BTI lifetimes. Improved reliability and increased robustness against process variations in the GAA formation module are also obtained for extensionless vs.reference inversion-mode (IM) FETs built with conventional junctions, at comparable device and circuit performance. JL GAA-NWFET devices also show improved on and off state hot carrier (HC) reliability and reduced LF noise, with some of them also exhibiting smaller subthreshold slope values after HC stress. In addition, further improvements in the noise, reliability and mobility performance of GAA-NWFETs can be obtained by introduction of a TiAl-based EWF-metal in the gate stack.

Published
2016
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19. Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications

Author

Simoen, Eddy, Ritzenthaler, Romain, Cho, Moon Ju, Schram, Tom, Horiguchi, Naoto, Aoulaiche, Marc, Spessot, Alessio, Fazan, Pierre, and Claeys, Cor

Abstract

The impact of the implementation of a high-k/metal-gate (HKMG) stack on the oxide integrity of input-output (I/O) pMOSFETs for DRAM periphery applications is investigated by means of low-frequency (LF) noise spectroscopy. It is shown that the predominant 1/f noise is governed by number fluctuations, irrespective of the details of the gate stack. However, the trap density in the 5 nm SiO2gate oxide, derived from the noise power spectral density is significantly increased by the application of the HKMG and/or Al2O3cap and the subsequent diffusion anneal at 900 oC.

Published
2015
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