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To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces \{copyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acsami.0c01025

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^\sigma$ which quantifies the electron spin-exchange interaction strength.

Superconducting materials exhibiting topological properties are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. In this work, we explore the possibility of a field-free platform for generating Majorana zero energy excitations by depositing magnetic Fe impurities on the surface of candidate topological superconductors, LiFeAs and PbTaSe$_2$. We use scanning tunneling microscopy to probe localized states induced at the Fe adatoms on the atomic scale and at sub-Kelvin temperatures. We find that each Fe adatom generates a striking zero-energy bound state inside the superconducting gap, which do not split in magnetic fields up to 8T, underlining a nontrivial topological origin. Our findings point to magnetic Fe adatoms evaporated on bulk superconductors with topological surface states as a new platform for exploring Majorana zero modes and quantum information science under field-free conditions., Comment: 11 pages, 3 figures

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide-2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm$^2$/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

Magnetic skyrmions have been the focus of intense research due to their potential applications in ultra-high density data and logic technologies, as well as for the unique physics arising from their antisymmetric exchange term and topological protections. In this work we prepare a chiral jammed state in chemically disordered (Fe, Co)Si consisting of a combination of randomly-oriented magnetic helices, labyrinth domains, rotationally disordered skyrmion lattices and/or isolated skyrmions. Using small angle neutron scattering, (SANS) we demonstrate a symmetry-breaking magnetic field sequence which disentangles the jammed state, resulting in an ordered, oriented skyrmion lattice. The same field sequence was performed on a sample of powdered Cu2OSeO3 and again yields an ordered, oriented skyrmion lattice, despite relatively non-interacting nature of the grains. Micromagnetic simulations confirm the promotion of a preferred skyrmion lattice orientation after field treatment, independent of the initial configuration, suggesting this effect may be universally applicable. Energetics extracted from the simulations suggest that approaching a magnetic hard axis causes the moments to diverge away from the magnetic field, increasing the Dzyaloshinskii-Moriya energy, followed subsequently by a lattice re-orientation. The ability to facilitate an emergent ordered magnetic lattice with long-range orientation in a variety of materials despite overwhelming internal disorder enables the study of skyrmions even in imperfect powdered or polycrystalline systems and greatly improves the ability to rapidly screen candidate skyrmion materials.

The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that an nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by ohmic contact behavior at T=2 K and a low barrier height, {\Phi}$_B$=50 meV. This ohmic contact enables demonstration of an ON-current as large as 410 {\mu}A/{\mu}m, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3,700 and 1,000 cm$^2$/Vs is achieved with the two-terminal In-InSe FEDs at T=2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D-semiconductor-based electronics.

Type-II Dirac/Weyl semimetals are characterized by strongly tilted Dirac cones such that the Dirac/Weyl node emerges at the boundary of electron and hole pockets as a new state of quantum matter, distinct from the standard Dirac/Weyl points with a point-like Fermi surface which are referred to as type-I nodes. The type-II Dirac fermions were recently predicted by theory and have since been confirmed in experiments in the PtSe2-class of transition metal dichal-cogenides. However, the Dirac nodes observed in PtSe2, PdTe2 and PtTe2 candidates are quite far away from the Fermi level, making the signature of topological fermions obscure as the physical properties are still dominated by the non-Dirac quasiparticles. Here we report the synthesis of a new type-II Dirac semimetal NiTe2 in which a pair of type-II Dirac nodes are located very close to the Fermi level. The quantum oscillations in this material reveal a nontrivial Berry's phase associated with these Dirac fermions. Our first principles calculations further unveil a topological Dirac cone in its surface states. Therefore, NiTe2 may not only represent an improved system to formulate the theoretical understanding of the exotic consequences of type-II Dirac fermions, it also facilitates possible applications based on these topological carriers., Comment: 4 figures, 1 table

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future., Comment: 7 pages, 5 figures

It is of great interest to design and make materials in which ferroelectric polarisation is coupled to other order parameters such as lattice, magnetic and electronic instabilities. Such materials will be invaluable in next-generation data storage devices. Recently, remarkable progress has been made in understanding improper ferroelectric coupling mechanisms that arise from lattice and magnetic instabilities. However, although theoretically predicted, a compact lattice coupling between electronic and ferroelectric (polar) instabilities has yet to be realised. Here we report detailed crystallographic studies of a novel perovskite Hg$^{\textbf{A}}$Mn$^{\textbf{A'}}_{3}$Mn$^{\textbf{B}}_{4}$O$_{12}$ that is found to exhibit a polar ground state on account of such couplings that arise from charge and orbital ordering on both the A' and B-sites, which are themselves driven by a highly unusual Mn$^{A'}$-Mn$^B$ inter-site charge transfer. The inherent coupling of polar, charge, orbital and hence magnetic degrees of freedom, make this a system of great fundamental interest, and demonstrating ferroelectric switching in this and a host of recently reported hybrid improper ferroelectrics remains a substantial challenge., Comment: 9 pages, 7 figures

Scanning tunneling microscopy visualizations of quasiparticle interference (QPI) enable powerful insights into the k-space properties of superconducting, topological, Rashba and other exotic electronic phases, but their reliance on impurities acting as scattering centers is rarely scrutinized. Here we investigate QPI at the vacuum-cleaved (001) surface of the Dirac semimetal ZrSiS. We find that interference patterns around impurities located on the Zr and S lattice sites appear very different, and can be ascribed to selective scattering of different sub-sets of the predominantly Zr 4d-derived band structure, namely the m = 0 and m = +/-1 components. We show that the selectivity of scattering channels requires an explanation beyond the different bands' orbital characteristics and their respective charge density distributions over Zr and S lattices sites. Importantly, this result shows that the usual assumption of generic scattering centers allowing observations of quasiparticle interference to shed light indiscriminately and isotropically upon the \textit{q}-space of scattering events does not hold, and that the scope and interpretation of QPI observations can therefore be be strongly contingent on the material defect chemistry. This finding promises to spur new investigations into the quasiparticle scattering process itself, to inform future interpretations of quasiparticle interference observations, and ultimately to aid the understanding and engineering of quantum electronic transport properties., Comment: This version is as accepted for PRB

Plasmons, the collective excitations of electrons in the bulk or at the surface, play an important role in the properties of materials, and have generated the field of Plasmonics. We report the observation of a highly unusual acoustic plasmon mode on the surface of a three-dimensional topological insulator (TI), Bi2Se3, using momentum resolved inelastic electron scattering. In sharp contrast to ordinary plasmon modes, this mode exhibits almost linear dispersion into the second Brillouin zone and remains prominent with remarkably weak damping not seen in any other systems. This behavior must be associated with the inherent robustness of the electrons in the TI surface state, so that not only the surface Dirac states but also their collective excitations are topologically protected. On the other hand, this mode has much smaller energy dispersion than expected from a continuous media excitation picture, which can be attributed to the strong coupling with surface phonons.

The Dirac semimetal phase found in Cd$_{3}$As$_{2}$ is protected by a $C_{4}$ rotational symmetry derived from a corkscrew arrangement of systematic Cd vacancies in its complicated crystal structure. It is therefore surprising that no microscopic observation, direct or indirect, of these systematic vacancies has so far been described. To this end, we revisit the cleaved (112) surface of Cd$_{3}$As$_{2}$ using a combined approach of scanning tunneling microscopy and \textit{ab initio} calculations. We determine the exact position of the (112) plane at which Cd$_{3}$As$_{2}$ naturally cleaves, and describe in detail a structural periodicity found at the reconstructed surface, consistent with that expected to arise from the systematic Cd vacancies. This reconciles the current state of microscopic surface observations with those of crystallographic and theoretical models, and demonstrates that this vacancy superstructure, central to the preservation of the Dirac semimetal phase, survives the cleavage process and retains order at the surface., Comment: Supplemental Material included. 16 pages, 7 figures

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at room temperature. The weak gate tuning behavior in the depletion regime of SnS devices is explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from intrinsic defects induced holes in SnS. Through etching and n-type surface doping by Cs2CO3 to reduce/compensate the not-gatable holes near SnS flake's top surface, the devices gained an order of magnitude improvement in the ON-OFF ratio and hole Hall mobility ~ 100 cm$^2$/Vs at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of carriers in the semiconductor.

The single crystal growth and superconducting properties of PbTaSe2 with non-centrosymmetric crystal structure is reported. Using the chemical vapor transport (CVT) technique, PbTaSe2 crystallizes in a layered structure and the crystal symmetry has been shown belonging to a non-centrosymmetric space group P6-m2 confirmed by the consistent band picture near the Fermi level between the angle-resolved photoemission spectrum (ARPES) and theoretical calculations. Superconductivity with Tc =3.83 K has been characterized fully with electrical resistivity \r{ho}(T), magnetic susceptibility \c{hi}(T), and specific heat C(T) measurements using single crystal samples. The superconducting anisotropy, electron-phonon coupling {\lambda}ep, superconducting energy gap {\Delta}0, and the specific heat jump {\Delta}C/{\lambda}Tc at Tc confirms that PbTaSe2 can be categorized as a weakly coupled type-II superconductor., Comment: 24 pages, 9 figures, 25 references

The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by fabrication techniques. We demonstrate that fine-tuned electronic structures and band structures can be modified to initiate DMO properties. Interestingly, in the semiconducting state, the doped Co ions and oxygen vacancies contribute non-negligible magnetic moments; and the magnetic coupling between these moments is mediated by the localized carriers via highly spin polarized hopping transport. These results unravel the myth of the origin of spintronic characteristics with desirable electronic states; thereby reopening the door for future applications.

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multi-layer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the devices' field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 77-300K fall in the range of 0.1-2.0$\times$10$^3$ cm$^2$/Vs, which are comparable or better than the state of the art FETs made of 2D transition metal-dichalcogenides., Comment: Nano Letters, in press

In a topological insulator, it is the electrons on the surface or edge that carry the signature of topology. Recently, a novel topological state has been proposed in metals or semimetals (gapless) whose band-structure is similar to that of a three-dimensional analog of graphene. However, to this date the signature of its topology remains an open question. We report the experimental discovery of a pair of polarized Fermi arc surface state modes in the form of a new type of two-dimensional polarized electron gas on the surfaces of Dirac semimetals. These Fermi arc surface states (FASS) are observed to connect across an even number of bulk band gapless nodes and found to have their spin uniquely locked to their momentum. We show that these states are distinctly different from the topological surface states (TSS) seen in all known topological insulators. Our observed exotic two-dimensional states not only uncover the novel topology of gapless Dirac metals (such as sodium tribismuth Na$_3$Bi) but also opens new research frontiers for the utilization of topological Fermi arc electron gases for a wide range of fundamental physics and spintronic studies., Comment: ScienceExpress (2014) adv.online, 18-Dec-2014; Related papers on the discovery of topological Fermi arcs and Weyl Semimetals (WSMs) are at http://physics.princeton.edu/zahidhasangroup/index_Lists.html

Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics as a result of the indirect to direct band gap transition and the emergence of the spin-valley coupling phenomenon upon moving from the bulk to monolayer limit. Here, we report high-resolution angle-resolved photoemission spectroscopy on MoSe2 (molybdenum diselenide) single crystals and monolayer films of MoS2 grown on Highly Ordered Pyrolytic Graphite substrate. Our experimental results, for the first time, resolve the two distinct bands at the Brillouin zone corner of the bulk MoSe2, and provide evidence for the critically important spin-orbit split bands of the monolayer MoS2. Moreover, by depositing potassium on cleaved surfaces of these materials, the process through which quantum well states form on the surfaces of transition metal dichalcogenides is systematically imaged. We present a theoretical model to account for the observed spin-orbit splitting and the rich spectrum of the quantum well states observed in our experiments. Our findings taken together provide important insights into future applications of transition metal dichalcogenides in nanoelectronics, spintronics, and photonics devices as they critically depend on the spin-orbit physics of these materials., Comment: Nature Communications (to appear)