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A study was conducted to examine the photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal. Room-temperature photoluminescence intensity was characterized with energy levels while the samples' temperature during ion implantation was kept at liquid nitrogen. Fourier transform infrared spectrometry was also utilized to analyze the presence or loss of hydrogen-related species in the oxide films. The luminescent features observed during the study were consistent with the mechanism of non-bridging oxygen hole centers.

A new surface treatment is presented which uses phosphorous sulfide/ammonia sulfide and hydrogen sulfide solutions to enhance the barrier height of Ag/n-GaAs and Ag/n-InP Schottky diodes.

Presents information on a study which observed the abnormal variation of the band-gap energy with temperature in short-period-superlattice structures. Experimental method; results and discussion; Conclusion.

Abstract: In this study, the rare earth erbium oxide (Er2O3) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t) of the MOS–HEMT were 125mV/decade and 4.3×1012 cm−2, respectively. The dielectric constant of the Er2O3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166V for the conventional HEMT to –196V for the Er2O3 MOS–HEMT. [Copyright &y& Elsevier]