33 results on '"Chung, U.I."'
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2. Identification of a transcription factor p63 for joint cartilage formation by analyses of Wnt9a and Gdf5 promoters
3. A26 C/EBP-BETA PROMOTES HYPERTROPHIC DIFFERENTIATION OF CHONDROCYTES THROUGH TRANSACTIVATION OF P57KIP2 DURING ENDOCHONDRAL OSSIFICATION
4. A4 HYPOXIA-INDUCIBLE FACTOR 2A (HIF2A) CONTROLS SEQUENTIAL STEPS IN THE LATE STAGE OF ENDOCHONDRAL OSSIFICATION
5. 158 AKT1 CONTRIBUTES TO CHONDROCYTE CALCIFICATION DURING ENDOCHONDRAL OSSIFICATION
6. A1 A NOVEL SMALL THIENOINDAZOLE-DERIVATIVE COMPOUND PROMOTES CHONDROGENIC DIFFERENTIATION WITHOUT INDUCING HYPERTROPHY THROUGH PRODUCTION OF RUNX1
7. 371 TEMPORAL AND SPATIAL CHANGES OF ELEMENTAL DISTRIBUTIONS IN BONE AND CARTILAGE
8. 8 IDENTIFICATION OF SORTING NEXIN 19 AS A NOVEL CHONDROGENIC FACTOR BY A REAL-TIME FLUORESCENCE MONITORING CELL LINE ATDC5-S2RD5
9. Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics
10. A Highly Reliable Cu Interconnect Technology for Memory Device
11. Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer
12. Recessed junction and low energy n-junction implantation characteristics
13. Recessed junction and low energy n-junction implantation characteristics.
14. A Study of the Planarity by Sti Cmp Erosion Modeling
15. Surface Stability and Flow Characteristics of BPSG Film by N2O Plasma Treatment
16. A new planar stacked technology (PST) for scaled and embedded DRAMs.
17. The Effect of Iridium Bottom Electrode on the Characteristics of Pb(Zr,Ti)O4 Films Grown by MOCVD Method.
18. A26 C/EBP-BETA PROMOTES HYPERTROPHIC DIFFERENTIATION OF CHONDROCYTES THROUGH TRANSACTIVATION OF P57 KIP2 DURING ENDOCHONDRAL OSSIFICATION
19. Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers
20. Highly manufacturable sub-100 nm DRAM integrated with full functionality
21. CVD-cobalt for the next generation of source/drain salicidation and contact silicidation in novel MOS device structures with complex shape
22. The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs
23. A smart batch type RTA technology for beyond 256 Mbit DRAM
24. A new capacitor on metal (COM) cell for beyond 256 Mbit DRAM
25. Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO3/MOCVD PZT capacitor technology.
26. Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers.
27. Highly manufacturable sub-100 nm DRAM integrated with full functionality.
28. Design of sub-100 nm CMOSFETs: gate dielectrics and channel engineering.
29. Application of HSQ (hydrogen silsesquioxane) based SOG to pre-metal dielectric planarization in STC (stacked capacitor) DRAM.
30. A smart batch type RTA technology for beyond 256 Mbit DRAM.
31. A new capacitor on metal (COM) cell for beyond 256 Mbit DRAM.
32. Surface Stability and Flow Characteristics of BPSG Film by N2O Plasma Treatment.
33. A26 C/EBP-BETA PROMOTES HYPERTROPHIC DIFFERENTIATION OF CHONDROCYTES THROUGH TRANSACTIVATION OF P57KIP2 DURING ENDOCHONDRAL OSSIFICATION.
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