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Cubic rocksalt structured transition-metal carbides, nitrides, and related alloys (TMC/Ns) are attractive for a wide variety of applications, notably as hard, wear-resistant material. To-date, valence electron concentration (VEC) is used as a good indicator of stability and mechanical properties of these refractory compounds. In this perspective, we argue for the need for electronic descriptors beyond VEC to explain and predict the mechanical behavior of the cubic TMC/Ns. As such, we point out that descriptors that highlight differences between constituent have been underused, along with semi-empirical models of mechanical properties. Additionally, it appears promising to partition VEC into contribution to ionic, covalent, and metallic bonds and we suggest that such partition could provide more insight into predicting mechanical properties in the future.

Molybdenum carbide (Mo2C) nanoparticles and thin films are particularly suitable catalysts for catalytic fast pyrolysis (CFP) as they are effective for deoxygenation and can catalyze certain reactions that typically occur on noble metals. Oxygen deposited during deoxygenation reactions may alter the carbide structure leading to the formation of oxycarbides, which can determine changes in catalytic activity or selectivity. Despite emerging spectroscopic evidence of bulk oxycarbides, so far there have been no reports of their precise atomic structure or their relative stability with respect to orthorhombic Mo2C. This knowledge is essential for assessing the catalytic properties of molybdenum (oxy)carbides for CFP. In this article, we use density functional theory (DFT) calculations to (a) describe the thermodynamic stability of surface and subsurface configurations of oxygen and carbon atoms for a commonly studied Mo-terminated surface of orthorhombic Mo2C, and (b) determine atomic structures for oxycarbides with a Mo:C ratio of 2:1. The surface calculations suggest that oxygen atoms are not stable under the top Mo layer of the Mo2C(100) surface. Coupling DFT calculations with a polymorph sampling method, we determine (Mo2C)xOy oxycarbide structures for a wide range of oxygen compositions. Oxycarbides with lower oxygen content (y/x <=2) adopt layered structures reminiscent of the parent carbide phase, with flat Mo layers separated by layers of oxygen and carbon; for higher oxygen content, our results suggest the formation of amorphous phases, as the atomic layers lose their planarity with increasing oxygen content.

Based on a dipolar-elastic model for oxygen vacancies on rutile (110), we evaluated analytically the overall energy of a periodic array of two vacancies and extracted the interaction parameters from total-energy density functional theory (DFT) calculations. Our calculations show that the dipole model holds for next-nearest neighbor vacancies and beyond. The elastic-dipolar interaction vanishes for adjacent vacancies, but they still experience an electrostatic repulsion. The proposed interaction model predicts a vacancy separation distribution that agrees well with that determined in our ultra-high vacuum scanning tunneling microscopy experiments, and provides a perspective for understanding earlier DFT reports., Comment: 5 pages, 4 figures, published as a rapid communication

Using in situ low-energy electron microscopy and density functional theory, we studied the growth structure and work function of bilayer graphene on Pd(111). Low-energy electron diffraction analysis established that the two graphene layers have multiple rotational orientations relative to each other and the substrate plane. We observed heterogeneous nucleation and simultaneous growth of multiple, faceted layers prior to the completion of second layer. We propose that the facetted shapes are due to the zigzag-terminated edges bounding graphene layers growing under the larger overlying layers. We also found that the work functions of bilayer graphene domains are higher than those of monolayer graphene, and depend sensitively on the orientations of both layers with respect to the substrate. Based on first-principles simulations, we attribute this behavior to oppositely oriented electrostatic dipoles at the graphene/Pd and graphene/graphene interfaces, whose strengths depend on the orientations of the two graphene layers., Comment: 7 pages, 6 figures

Using density functional theory calculations, we show that the binding strength of a graphene monolayer on Pd(111) can vary between physisorption and chemisorption depending on its orientation. By studying the interfacial charge transfer, we have identified a specific four-atom carbon cluster that is responsible for the local bonding of graphene to Pd(111). The areal density of such clusters varies with the in-plane orientation of graphene, causing the binding energy to change accordingly. Similar investigations can also apply to other metal substrates, and suggests that physical, chemical, and mechanical properties of graphene may be controlled by changing its orientation., Comment: 5 pages, 6 figures

The five independent elastic constants of hexagonal $\beta$-eucryptite have been determined using density functional theory (DFT) total energy calculations. The calculated values agree well, to within 15%, with the experimental data. Using the calculated elastic constants, the linear compressibility of $\beta$-eucryptite parallel to the c-axis, $\chi_c$, and perpendicular to it, $\chi_a$, have been evaluated. These values are in close agreement to those obtained from experimentally known elastic constants, but are in contradiction to the direct measurements based on a three-terminal technique. The calculated compressibility parallel to the c-axis was found to positive as opposed to the negative value obtained by direct measurements. We have demonstrated that $\chi_c$ must be positive and discussed the implications of a positive $\chi_c$ in the context of explaining the negative bulk thermal expansion of $\beta$-eucryptite., Comment: 3 eps figures, submitted for publication

Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a set of low-energy reconstruction models corresponding to $1\times 2$, $2\times 2$, and $1\times 4$ periodicities, and propose that the observed disorder stems from the presence of several coexisting reconstructions with different morphologies and nearly equal surface energies. These models also suggest that the model structures previously reported in the literature for the (103) orientation have very high surface energies and are thus unlikely to be experimentally observed., Comment: 4 pages, 3 figures, submitted for publication

The problem addressed here can be concisely formulated as follows: given a stable surface orientation with a known reconstruction and given a direction in the plane of this surface, find the atomic structure of the steps oriented along that direction. We report a robust and generally applicable variable-number genetic algorithm for step structure determination and exemplify it by determining the structure of monatomic steps on Si(114)-$2\times 1$. We show how the location of the step edge with respect to the terrace reconstructions, the step width (number of atoms), and the positions of the atoms in the step region can all be simultaneously determined., Comment: some low resolution figures due to arxiv limits

Although unstable, the Si(337) orientation has been known to appear in diverse experimental situations such as the nanoscale faceting of Si(112), or in the case of miscutting a Si(113) surface. Various models for Si(337) have been proposed over time, which motivates a comprehensive study of the structure of this orientation. Such a study is undertaken in this article, where we report the results of a genetic algorithm optimization of the Si(337)-$(2\times 1)$ surface. The algorithm is coupled with a highly optimized empirical potential for silicon, which is used as an efficient way to build a set of possible Si(337) models; these structures are subsequently relaxed at the level of ab initio density functional methods. Using this procedure, we retrieve most of the (337) reconstructions proposed in previous works, as well as a number of novel ones., Comment: 5 figures (low res.); to appear in J. Appl. Phys

In this article we report the results of global structural optimization of the Si(114) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface reconstructions, the parallel-tempering Monte Carlo method and the genetic algorithm. These procedures, coupled with the use of a highly-optimized interatomic potential for silicon, lead to finding a set of possible models for Si(114), whose energies are recalculated with ab-initio density functional methods. The most stable structure obtained here without experimental input coincides with the structure determined from scanning tunneling microscopy experiments and density functional calculations by Erwin, Baski and Whitman [Phys. Rev. Lett. 77, 687 (1996)]., Comment: 19 pages, 5 figures

We study the formation energies and repulsive interactions of monatomic steps on the TiN(001) surface, using density functional total-energy calculations. The calculated formation energy of [100] oriented steps agree well with recently reported experimental values; these steps are shown to have a rumpled structure, with the Ti atoms undergoing larger displacements than the N atoms. For steps that are parallel to [110], our calculations predict a nitrogen (N) termination, as the corresponding formation energy is several hundred meV/\AA \ smaller than that of Ti-terminated steps.

In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunnelling microscope (STM) images. We illustrate the method for the case of Si(105), and build a database of structures that includes the previously found low-energy models, as well as a number of novel configurations., Comment: 4 figures, 1 table

Although the clean Si(001) and Ge(001) surfaces are very similar, experiments to date have shown that dimer-vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(001), but not on Ge(001). In this paper, we perform empirical-potential calculations aimed at understanding the differences between the vacancies on Si(001) and Ge(001). We identify three energetic parameters that characterize the DVs on the two surfaces: the formation energy of a single DV, the attraction between two DVs in adjacent dimer rows, and the strain sensitivity of the formation energy of DVs and VLs. At the empirical level of treatment of the atomic interactions (Tersoff potentials), all three parameters are favorable for the self-assembly of DVs on the Si(001) surface rather than on Ge(001). The most significant difference between the defects on Si(001) and on Ge(001) concerns the formation energy of single DVs, which is three times larger in the latter case. By calculating the strain-dependent formation energies of DVs and VLs, we propose that the experimental observation of self-assembly of vacancies on clean Ge(001) could be achieved by applying compressive strains of the order of 2%., Comment: 3 tables, 4 figures, to appear in Surface Science

Recent experimental studies have shown that well-annealed, unstrained Si(105) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy (STM). We construct new models for the Si(105) surface that are based on single- and double-height steps separated by Si(001) terraces, and propose that the observed surface disorder of Si(105) originates from the presence of several structural models with different atomic-scale features but similar energies. This degeneracy can be removed by applying compressive strains, a result that is consistent with recent observations of the structure of the Ge/Si(105) surface., Comment: 4 figures, 1 table

Recent experiments have shown that steps on Si(113) surfaces self-organize into bunches due to a competition between long-range repulsive and short-range attractive interactions. Using empirical and tight-binding interatomic potentials, we investigate the physical origin of the short-range attraction, and report the formation and interaction energies of steps. We find that the short-range attraction between steps is due to the annihilation of force monopoles at their edges as they combine to form bunches. Our results for the strengths of the attractive interactions are consistent with the values determined from experimental studies on kinetics of faceting., Comment: 4 pages, 3 figures, to appear in Phys. Rev B, Rapid Communications

We report on density functional total energy calculations of the step formation and interaction energies for vicinal TaC(001) surfaces. Our calculations show that double and triple-height steps are favored over single-height steps for a given vicinal orientation, which is in agreement with recent experimental observations. We provide a description of steps in terms of atomic displacements and charge localization and predict an experimentally observable rumpled structure of the step-edges, where the Ta atoms undergo larger displacements compared to the C atoms., Comment: 4 pages, 4 figures

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of ``hut''-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain., Comment: to appear in Appl. Phys. Lett.; v2=minor corrections,figs resized

We show that the ground state of an attractive Bose gas in a double well evolves from a coherent state to a Schrodinger Cat like state as the tunneling barrier is decreased. The latter exhibits super- fragmentation as spin-1 Bose gas with antiferromagnetic interaction, which is caused by the same physics. We also show that the fragmented condensates of attractive and repulsive Bose gases in double wells lead to very different interference patterns., Comment: 4 pages, two figures

We show that the density profile of a Fermi gas in rapidly rotating potential will develop prominent features reflecting the underlying Landau level like energy spectrum. Depending on the aspect ratio of the trap, these features can be a sequence of ellipsoidal volumes or a sequence of quantized steps., Comment: 4 pages, 1 postscript file

We show that there are three possible phases for a spin-2 spinor Bose condensate, one more compared to the spin-1 case. The order parameters of these phases are the spontaneous magnetization and the singlet pair amplitude. Current estimates of scattering lengths show that all three phases have realizations in optically trapped alkali atoms. There is also a one-to-one correspondence between the structure of a spin-2 spinor Bose condensate and that of a d-wave BCS superfluid., Comment: 4 pages, 2 figures. A minor correction: a statement on inverted multiplet in the opening paragraph is restated