34 results on '"Ciou, Fong-Min"'
Search Results
2. Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress
3. Reliability Enhancement by Doping Boron and Fluorine in Lightly Doped Drain Region of High-Voltage FinFET
4. Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si3N4/AlGaN/GaN-HEMT
5. Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrate
6. Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
7. A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory
8. Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs
9. Investigating two−stage degradation of threshold voltage induced by off−state stress in AlGaN/GaN HEMTs
10. Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal-oxide-semiconductor capacitors induced by hydrogen diffusion
11. Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes
12. Analysis of Threshold Voltage Instability under Semi-ON Hot Electron Stress in AlGaN/GaN High Electron Mobility Transistor
13. A Comprehensive Negative Bias Temperature Instability Model for Gallium-nitride Metal-insulator-semiconductor High Electron Mobility Transistors From 77K to 393K
14. Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors
15. Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
16. Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress
17. Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si 3 N 4 /AlGaN/GaN-HEMT.
18. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer
19. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
20. The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET
21. Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors
22. Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation
23. Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs
24. Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories
25. Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process
26. Modified Conductance Method for The Extraction of Interface Traps in GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors
27. Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs
28. Influence of Hot Carriers and Illumination Stress on a-InGaZnO TFTs With Asymmetrical Geometry
29. Abnormal Increment Substrate Current After Hot Carrier Stress in n-FinFET
30. A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs
31. Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
32. Abnormal Positive Bias Temperature Instability induced by Dipole Doped N-type MOSCAP
33. Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
34. The Impact of Different TiN Capping Metal Thicknesses on High-k Oxygen Vacancies in n-MOSFETs
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.