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We present a novel simulation approach combined with pulsed laser experiments, spectroscopic ellipsometry, and Raman spectroscopy to comprehensively analyze phase transformation dynamics in thin films. The simulations apply to any thin film stack and incorporate critical factors, such as thin film interference, heat transfer, and temperature-dependent optical properties during heating and melting. As a case study, we investigate the picosecond laser-induced amorphization of antimony sulfide (Sb2S3) thin films, a promising alternative to traditional phase-change materials in photonic applications to validate the simulation model. The computational efficiency of our simulations enables not only the investigation of the laser-induced phase transformation but also the optimization of key process parameters and parameter fitting. The simulations identified optimal film thickness and laser fluence parameters that maximize energy efficiency, melting effectiveness, and quenching rate while ensuring high reflectivity contrast between the amorphous and crystalline states. By constructing a wide-ranging, high-resolution parameter map of the laser fluence and film thickness dependence of the melting process, we demonstrate how this model guides the understanding of phase transformation dynamics. Raman spectroscopy confirms the polycrystalline to amorphous transition of Sb2S3 and provides a semiquantitative estimate of the amorphous fraction as a function of laser fluence, which is qualitatively consistent with the simulation predictions of the model. The open-source simulation framework, experimentally validated, provides valuable insights into laser-induced amorphization dynamics in Sb2S3 and related phase-change material thin films, enabling rapid optimization of photonic devices. [ABSTRACT FROM AUTHOR]

Spectroscopic ellipsometry is used to study GaN films during growth by metalorganic vapor phase epitaxy (MOVPE) in correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). It is concluded that under normal growth conditions in MOVPE in contrast to PAMBE the surface is not terminated by a Ga bilayer.

The characteristics of the excitonic absorption and emission around the fundamental bandgap of wurtzite MgxZn1-xO grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy with Mg contents between x = 0 and x = 0.23 are studied using spectroscopic ellipsometry and photoluminescence (PL) measurements. The ellipsometric data were analyzed using a multilayer model yielding the dielectric function (DF). The imaginary part of the DF for the alloys exhibits a pronounced feature which is attributed to exciton-phonon coupling (EPC) similar to the previously reported results for ZnO. Thus, in order to determine reliable transition energies, the spectral dependence is analyzed by a model which includes free excitonic lines, the exciton continuum, and the enhanced absorption due to EPC. A line shape analysis of the temperature-dependent PL spectra yielded in particular the emission-related free excitonic transition energies, which are compared to the results from the DF line-shape analysis. The PL linewidth is discussed within the framework of an alloy disorder model. [ABSTRACT FROM AUTHOR]

The optical properties of quaternary Alx Iny Ga1-x-yN alloy films with 0.16< x<0.64 and 0.02< y<0.13 are presented. The (0001)-oriented AlInGaN layers were grown by metal-organic vapor phase epitaxy on thick GaN/sapphire templates. High-resolution x-ray diffraction measurements revealed the pseudomorphic growth of the AlInGaN films on the GaN buffer. Rutherford backscattering and wavelength-dispersive x-ray spectroscopy analysis were used in order to determine the composition of the alloys. The ordinary dielectric function (DF) of the AlInGaN samples was determined in the range of 1-10 eV by spectroscopic ellipsometry (SE) at room temperature (synchrotron radiation: BESSY II). The sharp onset of the imaginary part of the DF defines the direct absorption edge of the alloys. At higher photon energies, pronounced peaks are observed in the DF indicating a promising optical quality of the material. These features are correlated to the critical points of the band structure (van Hove singularities). An analytical model, which permits us to accurately describe the dielectric function (or optical constants) in the range of 1-10 eV, is also presented. The band-gap and high-energy interband transition values are obtained by fitting the experimental DF with the analytical model. The strain influence on the bandgap is evaluated by using the k×p formalism. Furthermore, an empirical expression is proposed which allows us to calculate the AlInGaN band-gap and high-energy inter-band transitions in the whole compositional range (x, y). The band-gap values obtained from the empirical expression are in good agreement with both the calculated ab initio and the experimental values determined by SE. [ABSTRACT FROM AUTHOR]

Epitaxial BiFeO3 films pulsed laser deposited on SrTiO3, Nb:doped SrTiO3, and DyScO3 were studied using variable angle spectroscopic ellipsometry, vacuum ultraviolet ellipsometry, micro-Raman spectroscopy, and x-ray diffraction. The energy band gap of the film deposited on DyScO3 is 2.75 eV, while the one for the film deposited on Nb:doped SrTiO3 is larger by 50 meV. The blueshift in the dielectric function of the BiFeO3 films deposited on Nb:doped SrTiO3 compared to the films deposited on DyScO3, indicates a larger compressive strain in the films deposited on Nb:doped SrTiO3. This is confirmed by Raman spectroscopy and by high resolution x-ray diffraction investigations. [ABSTRACT FROM AUTHOR]

Epitaxial BiFe[O.sub.3] films pulsed laser deposited on SrTi[O.sub.3], Nd:doped SrTi[O.sub.3] and DySc[O.sub.3] are analyzed by using variable angle spectroscopic ellipsometry, vacuum ultraviolet ellipsometry, micro-Raman spectroscopy and x-ray diffraction. The blueshift in the dielectric function of the BiFe[O.sub.3] films deposited on Nb:doped SrTi[O.sub.3] compared to the films deposited on DySc[O.sub.3] has indicated a larger compressive strain in the films deposited on Nb:doped SrTi[O.sub.3].

Ellipsometry is used for determining the dielectric function (DF) of phase-pure cubic AlN films. The sharp onset of the imaginary part of the DF has defined the direct absorption edge corresponding to a conduction-to-valence band spacing at the center of the Brillouin zone (BZ) and the phonon-assisted transitions have led to the pronounced absorption tail below this edge.