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Spacecraft magnetic field measurements are able to tell us much about the planets' interior dynamics, composition, and evolutionary timeline. Magnetic fields also serve as the source for passive magnetic sounding of moons. Time‐varying magnetic fields experienced by the moons, due to relative planetary motion, interact electrically with conductive layers within these bodies (including salty subsurface oceans) to produce induced magnetic fields that are measurable by nearby, magnetometer‐equipped spacecraft. Many factors influence the character of the induced field, including the precise amplitude and phase of the time‐varying field, known as the excitation or driving field and represented by excitation moments. In this work, we present an open‐source Matlab software package named PlanetMag that features calculation of planetary magnetic field models available in the literature at arbitrary positions and times. The implemented models enable simultaneous inversion of the excitation moments across a range of oscillation frequencies using linear least‐squares methods and ephemeris data with the SPICE toolkit. Here we summarize the available magnetic field models and their associated coordinate systems. Precisely determined excitation moments are a critical input to forward models of global induced fields. Our results serve as a prerequisite to any precise comparison to spacecraft data for magnetic sounding investigation of giant planet moons—connecting the induced magnetic field to a moon's interior requires accurate representation of the oscillating excitation field. We calculate complex excitation moments relative to the J2000 epoch and share the results as ASCII tables compatible with related software packages intended for induction response calculations. Plain Language Summary: Planetary magnetic fields tell us much about a planet's interior, composition, and history. Magnetic fields are also useful for remotely probing the interior of their moons, especially for finding and characterizing potential subsurface oceans. Liquid‐water oceans within the solar system are ideal places to search for habitable environments beyond Earth. Relating spacecraft magnetic measurements to the interior properties of the moons requires an understanding of various related components, including the manner in which the magnetic field applied to the moon changes with time. We have developed an open‐source software package called PlanetMag that uses published magnetic field models to estimate the magnetic field at any point in time and space. It also has the ability to precisely estimate the planetary field oscillations at the location of each large moon in the solar system, which is needed for prediction of the magnetic field response from the moon. Calculations of these magnetic oscillations are provided in text files compatible with existing software. Key Points: We developed an open‐source software package in Matlab called PlanetMag for evaluating planet magnetic field models from the literaturePlanetMag uses ephemeris data and least‐squares inversion methods to determine amplitudes and phases of magnetic excitations for moonsComplex excitation moments are determined for all outer planet large moons in support of magnetic sounding investigations [ABSTRACT FROM AUTHOR]

We show that electrically detected magnetic resonance (EDMR), through spin dependent trap assisted tunneling (SDTT) in amorphous SiC, exhibits approximately equal amplitudes at very high (8.5 T) and very low (0.013 T) magnetic fields at room temperature. This result strongly supports an SDTT/EDMR model in which spins at two nearby sites involved in a tunneling event are coupled for a finite time in circumstances somewhat analogous to spin pair coupling in the spin dependent recombination/EDMR model of Kaplan, Solomon, and Mott (KSM) [Kaplan, Solomon, and Mott, J. Phys. Lett. 39, 51 (1978)]. Since a comparable near zero magnetic field change in resistance is also observed in these samples, our results support the idea that this magnetoresistance response is also the result of a KSM-like mechanism involving SDTT. Additionally, we observe a large enhancement in SDTT/EDMR at high field (8.5 T) for temperatures below 50 K, which suggests the potential utility of SDTT in spin based quantum computation and other spintronic applications. [ABSTRACT FROM AUTHOR]

Electrically detected magnetic resonance (EDMR) involves the electron paramagnetic resonance (EPR) study of spin dependent transport mechanisms such as spin dependent tunneling and spin dependent recombination (SDR) in solid state electronics. Conventional EPR measurements generally require strong static magnetic fields, typically 3 kG or greater, and high frequency oscillating electromagnetic fields, typically 9 GHz or higher. In this study, we directly demonstrate that, in the absence of the oscillating electromagnetic field, a very large SDR response (≈1%) can be detected at zero magnetic field with associated hyperfine interactions at extremely low magnetic fields in a silicon carbide (SiC) diode at room temperature. The zero-field SDR (ZFSDR) response that we detect is unexpected in the conventional detection scheme of SDR via EDMR. We believe that our observations provide fundamental physical understanding of other recently reported zero-field phenomena such as singlet triplet mixing in double quantum dots and low-field giant magnetoresistance in organic semiconductors. Our work provides an unambiguous demonstration that the zero-field phenomenon we observe involves SDR. Measurements reported herein indicate that extremely useful low-field SDR and ZFSDR results can be acquired simply and inexpensively in systems of technological importance. This work also suggests the potential use of this new physics in applications including absolute magnetometry with self-calibration, spin based memories, quantum computation, and inexpensive low-field EDMR spectrometers for wafer/probing stations. [ABSTRACT FROM AUTHOR]

In this study, we utilize electrically detected magnetic resonance (EDMR) techniques and electrical measurements to study defects in SiC based metal oxide semiconductor field effect transistors (MOSFETs). We compare results on a series of SiC MOSFETs prepared with significantly different processing parameters. The EDMR is detected through spin dependent recombination (SDR) in most cases. However, in some devices at a fairly high negative bias, the EDMR likely also involves spin dependent trap-assisted tunneling (SDT) between defects on both sides of the SiC/SiO2 interface. At least three different defects have been detected in the magnetic resonance measurements. The defects observed include two at the SiC/SiO2 interface or on the SiC side of the SiC/SiO2 interface: one is very likely a vacancy center with a distribution which extends into the bulk of the SiC and the other is likely a 'dangling bond' defect. A third defect, located on the SiO2 side of the SiC/SiO2 interface, has a spectrum very similar to that previously reported for an oxygen deficient silicon coupled to a hydrogen atom. In nearly all cases, we observe a strong dominating single line EDMR spectrum with an isotropic g≈2.0027. In some samples, this strong central line is accompanied by two pairs of considerably weaker side peaks which we link to hyperfine interactions with nearby Si and C atoms. The pattern is physically reasonable for a silicon vacancy in SiC. We therefore tentatively assign it to a silicon vacancy or silicon vacancy associated defect in the SiC. In one set of devices with very high interface trap density we observe another dominating spectrum with g∥=2.0026 and g⊥=2.0010 with the symmetry axis coincident with the [0001] and nearly the SiC/SiO2 interface normal. We ascribe this EDMR spectrum to a 'dangling bond' defect. A third EDMR spectrum shows up in some devices at a fairly large negative gate bias. The phase of this spectrum is quite consistently opposite to that of the SDR detected EDMR at other biases. Part of this inverted phase spectrum involves two narrow lines which are separated by ≈10.5 G. Since the center responsible for this spectrum is almost certainly in the SiO2, it is likely due to the so called 10.4 G doublet center, an unpaired electron residing on an oxygen deficient silicon atom coupled to a hydrogen in SiO2. The likely presence of one oxygen deficient silicon defect suggests that other oxygen deficient silicon atom defect sites in the oxide may also be important in SiC/SiO2 devices. Oxygen deficient silicon defects in SiO2 are typically called E′ centers. Our results collectively demonstrate considerable complexity in both the chemical composition and physical distribution of performance limiting defects in SiC transistors, with defects observed on both sides of the SiC/SiO2 interface. Our results most strongly indicate that fairly high densities of intrinsic deep-level defects, likely due to a Si vacancy or a closely related defect, extend into the bulk of the SiC in all but one of the devices prepared utilizing a fairly wide range of processing parameters. [ABSTRACT FROM AUTHOR]

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC through magnetic resonance measurements in bipolar junction transistors using spin dependent recombination (SDR). The SDR spectrum has nine distinguishable lines; it is, within experimental error, essentially isotropic with four distinguishable pairs of side peaks symmetric about the strong center line. The line shape is, within experimental error, independent of bias voltage and recombination current. The large amplitude and spacing of the inner pair of side peaks and three more widely separated pairs of side peaks are not consistent with either a simple silicon or carbon vacancy or a carbon or silicon antisite. This indicates that the lifetime killing defect is not a simple defect but a defect aggregate. The spectrum is consistent with a multidefect cluster with an electron spin S=12. (The observed spectrum has not been reported previously in the magnetic resonance literature on SiC.) A fairly strong argument can be made in terms of a first order model linking the SDR spectrum to a divacancy or possibly a vacancy/antisite pair. The SDR amplitude versus gate voltage is semiquantitatively consistent with a very simple model in which the defect is uniformly distributed within the depletion region of the base/collector junction and is also the dominating recombination center. The large relative amplitude of the SDR response is more nearly consistent with a Kaplan–Solomon–Mott-like model for spin dependent recombination than the Lepine model. [ABSTRACT FROM AUTHOR]

We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations. [ABSTRACT FROM AUTHOR]

This study involves the use of adaptive signal processing techniques to improve the sensitivity of continuous wave electrically detected magnetic resonance. The approach should be of widespread utility in continuous wave magnetic resonance experiments of all kinds. We utilize adaptive signal averaging to expedite the averaging process usually performed in magnetic resonance experiments. We were capable of reducing the noise variance in a single trace by a factor of 11.3 which is equivalent to reduction in time by the same factor. This factor can be quite significant especially when signal averaging must be performed over the span of many hours to days. This technique may also be tailored to conventional electron spin resonance experiments and other techniques where signal averaging is utilized. The approach may offer promise in the eventual development of spin based quantum computing.