1. Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
- Author
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Andrini, G., Zanelli, G., Tchernij, S. Ditalia, Corte, E., Hernandez, E. Nieto, Verna, A., Cocuzza, M., Bernardi, E., Virzì, S., Traina, P., Degiovanni, I. P., Genovese, M., Olivero, P., and Forneris, J.
- Subjects
Physics - Applied Physics ,Physics - Optics ,Quantum Physics - Abstract
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.
- Published
- 2023
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