303 results on '"Collazo, Ramón"'
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2. Anderson transition in compositionally graded p-AlGaN.
3. Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
4. Probing collective oscillation of $d$-orbital electrons at the nanoscale
5. High electron mobility in AlN:Si by point and extended defect management.
6. Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
7. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas
8. Structural characteristics of m-plane AlN substrates and homoepitaxial films
9. A pathway to highly conducting Ge-doped AlGaN.
10. High p-conductivity in AlGaN enabled by polarization field engineering
11. High conductivity in Ge-doped AlN achieved by a non-equilibrium process
12. High conductivity and low activation energy in p-type AlGaN
13. On the Ge shallow-to-deep level transition in Al-rich AlGaN.
14. Native oxide reconstructions on AlN and GaN (0001) surfaces.
15. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
16. Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
17. Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
18. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
19. Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN.
20. Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
21. Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals
22. Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors
23. Recovery kinetics in high temperature annealed AlN heteroepitaxial films.
24. The role of chemical potential in compensation control in Si:AlGaN.
25. Design of AlGaN-based quantum structures for low threshold UVC lasers.
26. Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N‑Polar GaN for Future 2D/3D Heterojunction Optoelectronics.
27. Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy.
28. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
29. Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation
30. Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
31. Doping and compensation in heavily Mg doped Al-rich AlGaN films
32. Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures.
33. The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
34. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition.
35. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes.
36. Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
37. The influence of point defects on the thermal conductivity of AlN crystals.
38. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
39. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
40. High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
41. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces
42. Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals.
43. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates.
44. Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
45. Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces
46. Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers
47. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition.
48. The 2020 UV emitter roadmap
49. Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
50. Complexes and compensation in degenerately donor doped GaN
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