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8. Ohmic contacts and n-type doping on TixCr2−xO3 films and the temperature dependence of their transport properties

Author

Rangel-Kuoppa, Victor-Tapio and Conde-Gallardo, Agustin

Subjects
*TITANIUM dioxide, *METALLIC oxides, *TEMPERATURE effect, *OHMIC contacts, *THERMAL properties of metals, *DENSITY functionals
Abstract

Abstract: A procedure to dope n-type Cr2−xTixO3 thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on TixCr2−xO3 films. It consists on the deposition of 10nm Ti and 50nm Au, followed by thermal annealing at 1000°C for 20min in N2 atmosphere. Ohmic contacts were formed on three samples with different composition: x=0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35K and 373K. All samples showed n-type nature, with a charge carrier density (n) on the order of 1020 cm−3, decreasing as x increased. As a function of temperature, n shows a minimum around 150K, while the mobilities have an almost constant value of 11, 28 and 7cm2V−1 s−1 for x=0.17, 0.41 and 1.07, respectively. [ABSTRACT FROM AUTHOR]

Published
2010
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9. Ohmic Contact Recipe On TixCr2-xO3 And Its Application To Temperature Dependent Hall Measurements.

Author

Rangel-Kuoppa, Víctor-Tapio and Conde-Gallardo, Agustin

Subjects
*TITANIUM compounds, *OHMIC contacts, *EFFECT of temperature on metals, *TEMPERATURE measurements, *METALLIC thin films, *CARRIER density
Abstract

Ohmic contacts are formed on thin films with different compositions of TixCr2-xO3 (x=0.17, 0.41 and 1.07). The ohmic contacts consists of 10 nm Ti and 50 nm Au, annealed at 1000 °C for 20 min in a N2 atmosphere. The ohmic contacts are suitable in a temperature range from T=35 K to T=373 K. Temperature Hall measurements are done, and the electrical properties of the TiCrO films, as function of composition are found. All layers are n-type, with 1020 cm-3 charge carrier density. [ABSTRACT FROM AUTHOR]

Published
2013
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