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The main component of high-capacity silicon-based electrodes is silicon powder, which necessitates intricate processing to minimize volume growth and powder separation while guaranteeing the ideal Si content. This work uses the an situ high-pressure forming approach to create an MXene/m-Si/MXene composite electrode, where MXene refers to Ti3C2TX, and m-Si denotes two-phase mixed nano-Si particles. The sandwich shape promotes silicon's volume growth and stops active particles from spreading. The conductive structure of Ti3C2TX MXene increases the efficiency of charge transfer while reducing internal resistance. After 100 cycles, the composite electrode's original capacity of 1310.9 mAh g−1 at a current density of 0.5 A g−1 is maintained at 781.0 mAh g−1. These findings lay the foundation for further investigations into Si matrix composite electrodes. [ABSTRACT FROM AUTHOR]

In this study, self-powered photodetectors (PDs) sensitive to ultraviolet (UV) and short-wavelength blue (SWB) light were developed using a ZnO/SrTiO3 heterojunction, created through the magnetron sputtering technique. The photoresponse of the ZnO/SrTiO3 PDs showed significant enhancement following an annealing process. Post-annealing, the response (R) value of the ZnO/SrTiO3 PDs was recorded at 0.7 mA W−1, indicating an increase of 3.5 times compared to the pre-annealed state. Additionally, the rejection ratio between 390 nm and 450 nm (R390 nm/R450 nm) improved markedly from 6.21 to 38.16, demonstrating enhanced UV-SWB spectral discrimination. The rise and decay times for the annealed devices were measured at 35 μs and 3.5 ms, respectively. The observed enhancements in the performance of ZnO/SrTiO3 PDs are primarily attributed to the improved crystal quality of ZnO and the optimized intrinsic defect structures within the ZnO films due to annealing. This led to a strengthened internal electric field, facilitating the efficient separation and movement of photogenerated charge carriers. The outcomes of this study offer significant insights for the design and production of self-powered UV-SWB photodetectors. [ABSTRACT FROM AUTHOR]

Optical communication has become a research hotspot in modern non‐contact communication systems, and high‐performance photodetectors, as a key component, are crucial for achieving high‐fidelity signal transmission. Photoconductive devices (PCDs) are expected to find applications in the field of optical communication due to their advantages in high gain. However, it is difficult to achieve an effective balance between high responsiveness and fast response times in PCDs, leading to significant challenges in their commercial applications in the field of optical communication. In this paper, by employing both the mask method and channel width tuning method, a high‐performance PCD is developed based on the Ag‐MAPbI3‐Ag structure, demonstrating a high responsivity of 45.5 A W−1, a high detectivity of 7 × 1012 Jones, and a fast response time of 0.35 ms. Finally, this device is integrated into an optical communication system using embedded technology, effectively achieves byte transmission, and demonstrates the practical application of single‐crystal MAPbI3 PCD as a signal receiver in the system. This research provides a noteworthy approach to facilitating the seamless integration and commercialization of optical communication systems utilizing perovskite single‐crystal devices, while also paving the way for optical interconnects based on perovskite. [ABSTRACT FROM AUTHOR]

Cuprous oxide (Cu2O) is widely used in optoelectronic devices, because of its nontoxicity, high light absorption coefficient, native p-type conductivity and high hole mobility. Herein, a visible-light photodetector based on a graphene/Cu2O/Cu device is synthesized by novel thermal oxidation of Cu foil with the assistance of carbon powder and mechanically transferring the monolayer graphene onto the surface of the Cu2O. At zero bias voltage, the graphene/Cu2O/Cu visible-light photodetector exhibits an ultra-fast response time of 4.1 μs at 530 nm, a responsivity of 86 mA W−1 at 550 nm and excellent visible-light selectivity. Besides, the graphene/Cu2O/Cu device maintains high responsivity even after being bent thousands of times to a radius of curvature of 30 mm. Cross-sectional TEM and EDX measurements indicate that the ratio of copper to oxygen in the Cu2O film increased gradually from the surface to the inside, which induces an inherent built-in electric field along the normal direction of the Cu2O absorption layer and consequently a rapid separation of photo-generated carriers. Our research provides a new approach for developing self-powered flexible visible-light photodetectors with low cost, high efficiency and quick response. [ABSTRACT FROM AUTHOR]

In this work, a new type of photoconductor with high responsivity and gain over a wide spectral range of DUV to NIR using a wide band gap amorphous gallium oxide (a-Ga2O3) thin film was reported for the first time. The responsivity (gain) at deep UV-250, UV-350, VIS-525 and NIR-850 nm is as high as 1099 (5438), 265 (936), 205 (483) and 122 A W−1 (178), respectively. More interestingly, we demonstrate that a novel "thermal relaxation" (TR) process (short-time heating) can effectively reduce the dark current and improve the response recovery time from hours to seconds without reducing the gain of the a-Ga2O3 detector. The mechanism related to oxygen vacancies and thermal energy and tail state excitation is proposed to explain our experimental phenomena. This result suggests that amorphous Ga2O3 films have potential applications in high-performance broadband photodetecting devices. [ABSTRACT FROM AUTHOR]