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4. Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films

Author

Cong Meng-Long, Wang Yiding, Han Liang-Yu, Yin Jing-Zhi, and Cao Feng

Subjects
Diffraction, Materials science, Band gap, business.industry, Sputtering, Hall effect, Annealing (metallurgy), Electrical resistivity and conductivity, Doping, General Physics and Astronomy, Optoelectronics, business, Electrical conductor
Abstract

Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300 °C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 × 10−4 Ω.cm is obtained from the film annealed at 400 °C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.

Published
2009

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