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Spacetime inversion symmetry can generate intriguing types of spinless excitations in crystalline materials. Here, we propose a topological phase protected by spacetime inversion symmetry - the crossed real nodal line (RNL) in the phonon spectrum of gold monobromide (AuBr). In AuBr, there exist four straight nodal lines, which are linked by a crossed nodal line formed by two lower bands. Remarkably, each adjacent two of the four straight nodal lines is a pair, forming a crossed RNL with nontrivial real Chern number. Such configuration and pairing mode of RNL have never been reported. The crossed RNL exhibits unique surface and hinge states distinguished from that of the conventional RNLs. The symmetry protection and the transformation under the symmetry-preserving strain of the crossed RNL are also investigated. Our results open the door to a new class of topological states, and predict its realization in experimentally synthesized material.

Despite the rapid progress in the study of planar Hall effect (PHE) in recent years, all the previous works only showed that the PHE is connected to local geometric quantities, such as Berry curvature. Here, for the first time, we point out that the PHE in magnetic Weyl semimetals is directly related to a global quantity, namely, the Chern number of the Weyl point. This leads to a remarkable consequence that the PHE observation predicted here is robust against many system details, including the Fermi energy. The main difference between non-magnetic and magnetic Weyl points is that the latter breaks time-reversal symmetry T, thus generally possessing an energy tilt. Via semiclassical Boltzmann theory, we investigate the PHE in generic magnetic Weyl models with energy tilt and arbitrary Chern number. We find that by aligning the magnetic and electric fields in the same direction, the trace of the PHE conductivity contributed from Berry curvature and orbital moment is proportional to the Chern number and the energy tilt of the Weyl points, resulting in previously undiscovered quantized PHE plateau by varying Fermi energy. We further confirm the existence of PHE plateaus in a more realistic lattice model without T symmetry. By proposing a new quantized physical quantity, our work not only provides a new tool for extracting the topological character of the Weyl points but also suggests that the interplay between topology and magnetism can give rise to intriguing physics., Comment: 15 pages, 5 figures

Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a transverse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to the currents. In this work, we propose the electric counterparts of these two Hall effects, termed as electric Hall effect (EHE) and quantum electric Hall effect (QEHE). The EHE and QEHE emerge in 2D magnetic systems, where the transverse current is generated by applying an electric gate-field instead of a magnetic field. We present a symmetry requirement for intrinsic EHE and QEHE. With a weak gate-field, we establish an analytical expression of the intrinsic EHE coefficient. We show that it is determined by intrinsic band geometric quantities: Berry curvature and its polarizability which consists of both intraband and interband layer polarization. Via first-principles calculations, we investigate the EHE in the monolayer Ca(FeN)$_2$, where significant EHE coefficient is observed around band crossings. Furthermore, we demonstrate that the QEHE can appear in the semiconductor monolayer $\rm BaMn_2S_3$, of which the Hall conductivity exhibits steps that take on the quantized values $0$ and $\pm1$ in the unit of $e^2/h$ by varying the gate-field within the experimentally achievable range. Due to the great tunability of the electric gate-field, the EHE and QEHE proposed here can be easily controlled and should have more potential applications., Comment: 7 pages, 3 figures

Andreev reflection at a normal-superconductor interface may be accompanied with an anomalous spatial shift. The studies so far are limited to the top incidence configuration. Here, we investigate this effect in the side incidence configuration, with the interface parallel to the principal axis of superconductor. We find that the shift exhibits rich behaviors reflecting the character of pair potential. It has two contributions: one from the $k$-dependent phase of pair potential, and the other from the evanescent mode. For chiral $p$-wave pairing, the pairing phase contribution is proportional to the chirality of pairing and is independent of excitation energy, whereas the evanescent mode contribution is independent of chirality and is nonzero only for excitation energy below the gap. The two contributions also have opposite parity with respect to the incident angle. For $d_{x^{2}-y^{2}}$-wave pairing, only the evanescent mode contribution exists, and the shift exhibits suppressed zones in incident angles, manifesting the superconducting nodes. The dependence of the shift on other factors, such as the angle of incident plane and Fermi surface anisotropy, are discussed.

A real Chern insulator (RCI) featuring a real Chern number and a second-order boundary mode appears in a two-dimensional (2D) system with the space-time inversion symmetry (PT ). Here, we propose a kind of RCI: mirror real Chern insulator (MRCI) which emerges from the system having additional horizontal mirror symmetry Mz. The MRCI generally is characterized by two independent real Chern numbers, respectively defined in the two mirror subsystems of the system. Hence, the MRCI may host the second-order boundary modes different from the conventional RCI. We show that for spinless systems, the definition of the MRCI is straightforward, as PT keeps each mirror subsystem invariant. For the spinful systems with both PT and Mz, the real Chern number for the total system remain well defined, as MzPT = C2zT , and (C2zT )2= 1. However, since C2zT exchanges the two mirror subsystems, the definition of the MRCI in spinful systems requires the help of projective symmetry algebra. We also discuss the MRCIs in 3D systems, where the MRCI is defined on certain mirror-invariant 2D planes. Compared with its 2D counterpart, the 3D MRCI can exhibit more abundant physics when the systems have additional nonsymmorphic operators. Several concrete MRCI models including 2D and 3D, spinless and spinful models are constructed to further demonstrate our ideas.

In three dimensions, quasi-one-dimensional (Q1D) transport has traditionally been associated with systems featuring a Q1D chain structure. Here, based on first-principle calculations, we go beyond the common belief to show that the Q1D transport can also be realized in many three-dimensional (3D) altermagnetic (AM) metals with a topological nodal net in momentum space but lacking Q1D chain structure in real space, including the existing compounds $\beta$-Fe$_2$(PO$_4$)O, Co$_2$(PO$_4$)O, and LiTi$_2$O$_4$. These materials exhibit an AM ground state and feature an ideal crossed $Z^3$ Weyl nodal line in each spin channel, formed by three straight and flat nodal lines traversing the entire Brillouin zone. These nodal lines eventually lead to an AM $Z^3$ nodal net. Surprisingly, longitudinal conductivity $\sigma_{xx}$ in these topological nodal net metals is dozens of times larger than $\sigma_{yy}$ and $\sigma_{zz}$ in the up-spin channel, while $\sigma_{yy}$ dominates transport in the down-spin channel. This suggests a distinctive Q1D transport signature in each spin channel, with orthogonal principal moving directions for the two spin channels, resulting in Q1D direction-dependent spin transport. This novel phenomenon cannot be found in both conventional 3D bulk materials and Q1D chain materials. In particular, it gradually disappears as the Fermi level moves away from the nodal net, further confirming its topological origin. Our work not only enhances the comprehension of topological physics in altermagnets but also opens a new direction for the exploration of topological spintronics.

The TiSiCO-family monolayer $X_2Y$CO$_2$($X$=Ti, Zr, Hf; $Y$=Si, Ge) is a two-dimensional second-order topological insulator with unique valley-layer coupling in equilibrium condition. In this work, based on the four-band tight-binding (TB) model of monolayer Ti$_2$SiCO$_2$ (ML-TiSiCO) and the Floquet theory, we study the non-equilibrium properties of the ML-TiSiCO under a periodic field of laser and a gate-electric field. We find the interaction between the time-periodic polarized light and the electric field can lead to a variety of intriguing topological phase transitions. By driving the system with only circularly polarized light (CPL), a photoinduced topological phase transition occurs from a second-order topological insulator to a Chern insulator with a Chern number of $C=\pm$2, and the sign of the Chern number $C$ is determined by the chirality of the incident light. Further adding a perpendicular electric field, we find that the ML-TiSiCO exhibits a rich phase diagram, consisting of Chern insulators with different Chern numbers and various topological semimetals. In contrast, since the linearly polarized light (LPL) does not break time-reversal symmetry, the Chern number of the system would not be changed under the irradiation of LPL. However, there still exist many topological phases, including second-order topological insulator, topological semi-Dirac, Dirac and valley-polarized Dirac semimetals under the interaction between the LPL and the electric field. Our results not only enhance the understanding of the fundamental properties of ML-TiSiCO but also broaden the potential applications of such materials in optoelectronic devices.

The TiSiCO-family monolayers have recently been attracting significant attention due to their unique valley-layer coupling (VLC). In this work, we present a minimal, four-band tight-binding (TB) model to capture the low-energy physics of the TiSiCO-family monolayers $X_{2}Y$CO$_{2}$ ($X=$ Ti, Zr, Hf; $Y=$ Si, Ge) with strong VLC. These monolayers comprise two $X$ atom layers separated by approximately $4$ \AA ~in the out-of-plane direction. Around each valley ($X$ or $X'$), the conduction and valence bands are mainly dominated by the $A_{1}\{d_{z^{2}(x^{2}-y^{2})}\}$ and $B_{2}\{d_{yz}\}$ orbitals of the top $X$ atoms,and the $A_{1}\{d_{z^{2}(x^{2}-y^{2})}\}$ and $B_{1}\{d_{xz}\}$ orbitals of the bottom $X$ atoms. Using these four states as a basis, we construct a symmetry-allowed TB model. Through parameter fitting from first-principles calculations, the four-band TB model not only reproduces the electronic band structure, but also captures the strong VLC, high-order topology, and valley-contrasting linear dichroism of the monolayers. Furthermore, the TB model reveals that these monolayers may exhibit various intriguing topological phases under electric fields and biaxial strains. Hence, the TB model established here can serve as the starting point for future research exploring the physics related to VLC and the $X_{2}Y$CO$_{2}$ monolayers., Comment: 8 pages

Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field of spintronics. Current methodologies for generating spin polarization via an electric field generally necessitate spin-orbit coupling. Here, we propose an innovative mechanism that accomplishes this task without dependence on spin-orbit coupling. Our method employs two-dimensional altermagnets with valley-mediated spin-layer coupling (SLC), in which electronic states display symmetry-protected and valley-contrasted spin and layer polarization. The SLC facilitates predictable, continuous, and reversible control of spin polarization using a gate electric field. Through symmetry analysis and ab initio calculations, we pinpoint high-quality material candidates that exhibit SLC. We ascertain that applying a gate field of $0.2$ eV/\AA~ to monolayer Ca(CoN)$_2$ can induce significant spin splitting up to 123 meV. As a result, perfect and switchable spin/valley-currents, and substantial tunneling magnetoresistance can be achieved in these materials using only a gate field. These findings provide new opportunities for generating predictable spin polarization and designing novel spintronic devices based on coupled spin, valley and layer physics.

Traditional electronic devices rely on electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f. like the valley, can emerge in the low-energy states of certain systems. Here, we show that the quantum dots (QDs) constructed from two-dimensional (2D) second-order topological insulator (SOTI) posses a new kind of d.o.f., namely corner freedom, related to the topological corner states that reside at different corners of the systems. Since the corner states are well separated in real space, they can be intuitively addressed and manipulated individually, giving rise to the concept of cornertronics. Via symmetry analysis and material search, we identify the TiSiCO-family monolayers as the first prototype of cornertronics materials, where the corner states can be controlled by both electric and optical fields, due to the novel corner-layer coupling (CLC) effect and the corner-contrasted optical selection rules. Furthermore, we find that the band gap of the TiSiCO nanodisk lies in the terahertz region and is robust to size reduction. These results indicate that the TiSiCO nanodisks can be used to design terahertz devices with ultrasmall size, electric-field tunable band gap, and the ability to simultaneously detect the strength and polarization of terahertz waves, which is not possible for previously reported QDs. Our findings not only pave the way for the cornertronics, but also open a new direction for the research in 2D SOTI, QD and terahertz electronics.

Higher-order Weyl semimetals are a family of recently predicted topological phases simultaneously showcasing unconventional properties derived from Weyl points, such as chiral anomaly, and multidimensional topological phenomena originating from higher-order topology. The higher-order Weyl semimetal phases, with their higher-order topology arising from quantized dipole or quadrupole bulk polarizations, have been demonstrated in phononics and circuits. Here, we experimentally discover a class of higher-order Weyl semimetal phase in a three-dimensional photonic crystal (PhC), exhibiting the concurrence of the surface and hinge Fermi arcs from the nonzero Chern number and the nontrivial generalized real Chern number, respectively, coined a real higher-order Weyl PhC. Notably, the projected two-dimensional subsystem with kz = 0 is a real Chern insulator, belonging to the Stiefel-Whitney class with real Bloch wavefunctions, which is distinguished fundamentally from the Chern class with complex Bloch wavefunctions. Our work offers an ideal photonic platform for exploring potential applications and material properties associated with the higher-order Weyl points and the Stiefel-Whitney class of topological phases.

Using symmetry analysis and semiclassical Boltzmann equation, we theoretically explore the planar Hall effect (PHE) in three-dimensional materials. We demonstrate that PHE is a general phenomenon that can occur in various systems regardless of band topology. Both the Lorentz force and Berry curvature effects can induce significant PHE, and the leading contributions of both effects linearly depend on the electric and magnetic fields. The Lorentz force and Berry curvature PHE coefficient possess only antisymmetric and symmetric parts, respectively. Both contributions respect the same crystalline symmetry constraints but differ under time-reversal symmetry. Remarkably, for topological Weyl semimetal, the Berry curvature PHE coefficient is a constant that does not depends on the Fermi energy, while the Lorentz force contribution linearly increases with the Fermi energy, resulting from the linear dispersion of the Weyl point. Furthermore, we find that the PHE in topological nodal line semimetals is mainly induced by the Lorentz force, as the Berry curvature in these systems vanishes near the nodal line. Our study not only highlights the significance of the Lorentz force in PHE, but also reveals its unique characteristics, which will be beneficial for determining the Lorentz force contribution experimentally., Comment: 9 pages, 5 figures

Recently, the electronic analogy of the anomalous spatial shift, including Goos-H\"{a}nchen and Imbert-Fedorov effects, has been attracting widespread interest. The current research on the anomalous spatial shift in interface electronic reflection is based on the paradigm of linear approximation, under which the center position of the incident and reflected beams are obtained by expanding the phases of relevant basis states and scattering amplitudes to the first order of incident momentum. However, in a class of normal cases, the linear approximation can lead to a divergent spatial shift in reflection for certain incident angles even though the corresponding reflection possibility is finite. In this work, we show that such non-physical results are caused by an abrupt change in the number of the propagating states at critical parameters, and can be resolved by calculating the center positions of the scattering beams beyond the linear approximation. Moreover, we find that the beam width has an important influence on the spatial shift near the critical angles. We demonstrate our idea via concrete calculations of Goos-H\"{a}nchen and Imbert-Fedorov shift on two representative models. These results are beneficial for clarifying the scope of application of the linear approximation in the study of anomalous spatial shifts.

We present a systematic investigation of the magnetoresponses of the Weyl points (WPs) with a topological charge of n = 2, 3 and 4, and with both linear and quadratic energy tilt. The linear tilt always tends to squeeze the Landau levels (LLs) of both conduction and valence bands of all the WPs, and eventually leads to LL collapse in the type-II phase. However, the quadratic energy tilt has more complex influences on the LLs of the unconventional WPs. For charge-n (n = 2, 4) WP, the influence of the quadratic tilt on the LLs of conduction and valence bands are opposite, i.e. if the LLs of conduction (valence) bands are squeezed, then that of the valence (conduction) bands are broadened, and the squeezed LL spectrum will be collapsed in type-III phase. But, the LL collapse generally can not be found in the type-III charge-3 WP. Moreover, for charge-n (n = 2, 3) WP, the quadratic tilt breaks the degeneracy of the chiral LLs regardless of the direction of the magnetic field, leading to additional optical transitions and magneto-optical conductivity peaks at low frequencies. Interestingly, the four chiral LLs in charge-4 WP are always not degenerate. Hence, there inevitably exist magneto-optical conductivity peaks at low frequencies for charge-4 WP. Since the density of state of the LL spectrum is very large, one can expect that the low-frequency magneto-optical responses in unconventional WPs would be significant and may be used for developing efficient terahertz photodetectors.

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

Topological Weyl semimetals have been attracting broad interest. Recently, a new type of Weyl point with topological charge of $4$, termed as charge-4 Weyl point (C-4 WP), was proposed in spinless systems. Here, we show the minimum symmetry requirement for C-4 WP is point group $T$ together with ${\cal T}$ symmetry or point group $O$. We establish a minimum tight-binding model for C-4 WP on a cubic lattice with time-reversal symmetry and without spin-orbit coupling effect. This lattice model is a two-band one, ontaining only one pair of C-4 WPs with opposite chirality around Fermi level. Based on both the low-energy effective Hamiltonian and the minimum lattice model, we investigate the electronic, optical and magnetic properties of C-4 WP. Several chirality-dependent properties are revealed, such as chiral Landau bands, quantized circular photogalvanic effect and quadruple-helicoid surface arc states. Furthermore, we predict that under symmetry breaking, various exotic topological phases can evolve out of C-4 WPs. Our work not only reveals several interesting phenomena associate to C-4 WPs, but also provides a simple and ideal lattice model of C-4 WP, which will be helpful for the subsequent study on C-4 WPs.

Experimentally synthesized perovskite-type YRh$_{3}$B with a $Pm\bar{3}m$ type structure was proposed as a novel topological material (TM) via first-principles calculations and the low-energy $k\cdot p$ effective Hamiltonian, which has a quadratic contact triple point (QCTP) at point $\Gamma$ and six pairs of open nodal lines (NLs) of the hybrid type. Clear surface states observed in the surface spectrum confirmed the topological states. When spin-orbit coupling was considered, the QCTP at $\Gamma$ transferred to the quadratic-type Dirac nodal point (NP). Under 1$\%$ tetragonal strained lattice constants, YRh$_{3}$B hosted richer topological states, including a quadratic-type two-fold degenerate NP, six pairs of open NLs of the hybrid type, and two closed NLs of type I and hybrid type. Moreover, it was proved that the NLs of YRh$_{3}$B at its strained lattice constants contain all types of band-crossing points (BCPs) (i.e., type I, type II, and critical type). Such rich types of NP and NL states in one compound make it potentially applicable for multifunctional electronic devices as well as an appropriate platform to study entanglement among topological states.

We propose a class of nodal line semimetals that host an eight-fold degenerate double Dirac nodal line (DDNL) with negligible spin-orbit coupling. We find only 5 of the 230 space groups host the DDNL. The DDNL can be considered as a combination of two Dirac nodal lines, and has a trivial Berry phase. This leads to two possible but completely different surface states, namely, a torus surface state covering the whole surface Brillouin zone and no surface state at all. Based on first-principles calculations, we predict that the hydrogen storage material LiBH is an ideal DDNL semimetal, where the line resides at Fermi level, is relatively flat in energy, and exhibits a large linear energy range. Interestingly, both the two novel surface states of DDNL can be realized in LiBH. Further, we predict that with a magnetic field parallel to DDNL, the Landau levels of DDNL are doubly degenerate due to Kramers-like degeneracy and have a doubly degenerate zero-mode.

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase., Comment: 8 pages, 5 figures

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $\Gamma$--M and $\Gamma$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials., Comment: 5 pages, 4 figures