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Recently, rapid phenotypic antimicrobial susceptibility testing (AST) based on microscopic imaging analysis has been developed. The aim of this study was to determine whether implementation of antimicrobial stewardship programmes (ASP) based on rapid phenotypic AST can increase the proportion of patients with haematological malignancies who receive optimal targeted antibiotics during early periods of bacteraemia.This randomized controlled trial enrolled patients with haematological malignancies and at least one positive blood culture. Patients were randomly assigned 1:1 to conventional (n = 60) or rapid phenotypic (n = 56) AST. The primary outcome was the proportion of patients receiving optimal targeted antibiotics 72 hr after blood collection for culture.The percentage receiving optimal targeted antibiotics at 72 hr was significantly higher in the rapid phenotypic AST group (45/56, 80.4%) than in conventional AST group (34/60, 56.7%) (relative risk (RR) 1.42, 95% confidence interval (CI) 1.09-1.83). The percentage receiving unnecessary broad-spectrum antibiotics at 72 hr was significantly lower (7/26, 12.5% vs 18/60, 30.0%; RR 0.42, 95% CI 0.19-0.92) and the mean time to optimal targeted antibiotic treatment was significantly shorter (38.1, standard deviation (SD) 38.2 vs 72.8, SD 93.0 hr; p 0.001) in the rapid phenotypic AST group. The mean time from blood collection to the AST result was significantly shorter in the rapid phenotypic AST group (48.3, SD 17.6 vs 83.1, SD 22.2 hr).ASP based on rapid phenotypic AST can rapidly optimize antibiotic treatment for bacteraemia in patients with haematological malignancy. Rapid phenotypic AST can improve antimicrobial stewardship in immunocompromised patients.

In this study, the antidiabetic efficacy of Protaetia brevitarsis in alloxan-treated pancreatic islets and db/db mice was investigated. P. brevitarsis was tested for alloxan-mediated cytotoxicity and nitric oxide production in mice pancreatic islets.The anti-diabetic effect of P. brevitarsis was also evaluated in db/db mice after 4 weeks of administration. Biochemical analysis, oral glucose tolerance test (OGTT), and pancreatic histological analysis were performed.P. brevitarsis displayed hypoglycemic activity in alloxan-treated mice pancreatic islets. Our results showed that P. brevitarsis protects pancreatic islets from cytotoxicity. Moreover, daily oral supplementation with P. brevitarsis for 4 weeks reduced plasma glucose levels without affecting body weight and food intake, elevated glucose tolerance in OGTT, improved blood lipid parameters, inhibited fat accumulation, and restored islet structure of db/db mice.The present study provided evidence for the anti‑diabetic effect of P. brevitarsis in alloxan-treated pancreatic islets and db/db mice. These results suggest that P. brevitarsis may be used as an adjunctive anti-diabetic agent or as a functional food.

A collapse of slope is one of the natural disasters that often occur during the early spring and the rainy season. In order to prevent this kind of disaster, safety monitoring is carried out through risk assessment. This assessment consists of various parameters such as inclination angle and height of the slope, and inspectors evaluate the score using the compass, the laser range finder, and so on. This approach is, however, consumed a lot of the manpower and the time. This study, therefore, aims to evaluate the rapid and accurate steep slope risk by using a terrestrial LiDAR which takes 3 dimensional spatial information data. 3D spatial information data was acquired using the terrestrial LiDAR for steep slopes classified as very unstable slopes. Noise and vegetation of the acquired scan data were removed to generate point cloud data with a rock or mountain model without vegetation. The RMSE of the registration accuracy was 0.0156 m. From the point cloud data, the inclination angle, height, shape, valley, collapse and loss were evaluated. As a result, various risk assessment parameters can be checked at once. In addition, it is expected to be used as basic data for constructing steep slope DB, providing visualization data, and time series analysis in the future.

Background Everolimus, an oral mTOR inhibitor, has single-agent activity against relapsed lymphomas. Thus, we carried out a phase II study of everolimus in combination with CHOP (cyclophosphamide, doxorubicin, vincristine, and prednisone) as a first-line treatment for patients with peripheral T-cell lymphoma (PTCL) based on our phase I study results. Patients and methods Participants (n = 30) received CHOP with 5 mg everolimus per day from day 1 to 14 every 21 days for a total of six cycles. The primary end point was the overall response rate (ORR), which included complete response (CR) and partial response (PR) to this regimen. Immunohistochemistry was used to evaluate the expression of phosphatase and tensin homology (PTEN) and phosphorylated S6 kinase (pS6K) as a response. Results The objective response rate was 90% with CR (n = 17) and PR (n = 10). The CR rate was different among subtypes; angioimmunoblastic T-cell lymphoma (AITL, n = 3) had a CR whereas PTCL-not-otherwise specified and ALK-negative anaplastic large-cell lymphoma (ALCL) patients showed 63% (12/19) and 29% (2/7) of CR rate, respectively. This difference in CR rate among subtypes was associated with PTEN loss because PTEN loss was not seen in AITL but 33% of ALCL patients. The most common toxicity was hematological, with 80% of patients experiencing at least one event of grade 3/4 neutropenia, and 60% of patients had grade 3/4 thrombocytopenia. Conclusion The everolimus plus CHOP was effective for PTCL patients, and its efficacy might be related with the preservation of PTEN.

The transport measurement technique has been adapted to investigate the magnetization processes of GaMnAs ferromagnetic semiconductor film. While the planar Hall resistance (PHR) reached different values at 3 K in each attempt for zero field cooling (ZFC) process, it always ended the same value in the field cooling (FC) process. This indicates that the GaMnAs film in the absence of magnetic field magnetized randomly among four magnetic easy axes along 〈1 0 0〉 directions without preference of specific direction, while the presence of the magnetic field provides preference of the magnetization to specific direction. The PHR measured with and without external magnetic field in the heating process also showed significantly different behavior, which originate from the temperature dependence of magnetic anisotropy in the GaMnAs film.

We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (Tc) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.

The Zeeman effect of a hybrid structure consists of a ZnCdMnSe diluted magnetic semiconductor (DMS) quantum well (QW) and superconductor array pattern on the surface was investigated by magneto-photoluminescence (PL) experiment. The superconductor arrays were designed to have width and space of 20 and of 2 μm, respectively. The PL from DMS-QW exhibits a large Zeeman shift, a characteristic of DMS system, in the presence of a magnetic field. Significant enhancement of the Zeeman shift, however, was observed in the PL emitted from the superconductor patterned area compared to that observed from un-patterned area of DMS-QW. This indicates that the superconductor arrays pattern enhances the strength of applied magnetic field for local patterned area of the DMS-QW system.

The correlation of the equilibrium behaviors of phosphorus and vanadium between slag and low carbon molten steel in inert atmosphere was investigated with respect to the experimental variables of slag basicity, the (P2O5) and (V2O5) content, and the reaction temperature. The distribution ratios of phosphorus and vanadium increased with an increase in the slag basicity. The logarithms of the vanadium distribution ratio were greater by a factor of about two than those of phosphorus in the range of low slag basicity, but the difference diminished with an increase in the slag basicity. The logarithms of the vanadium distribution ratio increased linearly with an increase in the (P2O5) and (V2O5) content in the slag, while those of phosphorus remained nearly constant. The logarithms of the phosphorus and vanadium distribution ratio decreased with an increase in temperature, and the dependence on temperature was greater for the phosphorus than for the vanadium. For both the maximization of the vanadium yield and the minimization of the rephosphorization of molten steel in the steelmaking process, the ratio of N(V2O5)/N(P2O5), the slag basicity, the ratio of f[P]/f[V], and the temperature should be maximized, and the (FeO) content in the slag should be minimized.

Magneto-photoluminescence experiments were carried out on self-assembled quantum dots (QDs) fabricated in the form of two adjacent QD layers separated by a thin barrier. A strong PL peak is observed in this double-layer QD system, which is identified as the ground state transition. The PL peak exhibits a large Zeeman shift, characteristic of structures involving diluted magnetic semiconductors (DMSs) when an external magnetic field is applied. However, the dependence of the PL intensity on magnetic field shows an entirely unexpected behavior in this double-layer QD structure. In contrast to typical behavior of many low-dimensional DMS systems, where the application of a magnetic field B dramatically increases the PL intensity, in double-layer structures described above we observe a striking decrease of the PL intensity as a function of B. This effect indicates carrier tunneling from CdSe to CdMnSe dots as the band edges of CdMnSe are Zeeman-shifted, thus increasing the exciton probability in the DMS QDs.

We have studied a double-layer self-assembled quantum dot (QD) structures consisting of non-magnetic CdSe and magnetic CdMnSe. Transmission electron microscopy image shows that QDs are formed within the CdSe and CdMnSe layers, and they are vertically correlated in the system. The strong interband ground state transition was observed in magneto-photoluminescence (PL) experiments. In contrast to a typical behavior for many low-dimensional systems involving diluted magnetic semiconductors (DMSs), where PL signal dramatically increases when an external magnetic field is applied, we have observed a significant decrease of the PL intensity as a function of magnetic field in the double-layer structures where the alternating QD layers contain the DMS and non-DMS QDs. We attribute such effect to carrier transfer from non-magnetic CdSe dots to magnetic CdMnSe dots due to the large Zeeman shift of the band edges of DMS QDs in magnetic field. Since the band alignment of QD structure strongly depends on the spin states of system, we performed polarization-selective PL measurement to identify spin-dependent carrier tunneling in this coupled system.

We have fabricated single and multi-layer self-assembled quantum dot (QD) systems based on CdSe/ZnSe combination, including magnetic semiconductors (DMSs). Transmission electron microscopy (TEM) images shows that magnetic QDs are formed within the CdMnSe layer, and they are vertically correlated in multi-layer quantum dot systems. Magneto-optical experiments were also carried out on those structures. The PL energy from multi-layer QDs appears at a lower energy than that emitted by a single QD layer, suggesting that there exists electronic coupling between the QD layers. When an external magnetic field is applied, the PL peaks from QDs both in single-layer and in multi-layer form exhibit a large intensity enhancements and energy shifts, a behavior that is typical for many low dimensional systems involving DMSs. The observed weak PL energy dependence in low magnetic fields can be understood in terms of magnetic polaron formation in these DMS QD systems. We also discuss statistical magnetic fluctuations in these systems, as revealed by PL line narrowing in a magnetic field.

To precisely identify the effect of the molecular weight of syndiotactic poly(vinyl alcohol) (s-PVA) on the water stability of a s-PVA/iodine complex film, we prepared four s-PVAs with similar syndiotactic diad (s-diad) contents of about 63% and with different number-average degrees of polymerization, Pn, of 900, 6,000, 10,000, and 17,000, respectively. The desorption behavior of iodine in the s-PVA/iodine complex film in water was investigated in relation to the solubility of s-PVA in water. The degree of solubility of a s-PVA film having different Pn in water at 80 °C was limited to about 0.3–10%, whereas the degrees of solubility of atactic PVA films with Pn of 6,000 and 10,000 were 100% at the same conditions. The degree of iodine desorption of the complex film decreased with increasing Pn of s-PVA. Especially, the degree of iodine desorption of a PVA drawn film having Pn of 17,000 was limited to 2%, regardless of soaking temperature from 40 to 80 °C. The desorption of iodine in water was strongly affected by the dissolution of PVA. In addition, the degree of iodine desorption of the drawn s-PVA/iodine film was larger than that of the undrawn one.

Magneto-optical experiments were carried out on structures comprised of multiple layers of self-assembled quantum dots (QDs) involving diluted magnetic semiconductors (DMSs). Photoluminescence (PL) from interband ground state transitions was clearly observed in these DMS-based QD systems. The PL energy from QD multilayers appears at a lower energy than that emitted by a single QD layer, suggesting that there exists electronic coupling between the QD layers. When an external magnetic field is applied, the PL peaks from QDs both in single-layer and in multilayer form exhibit large Zeeman shifts and a significant enhancement of intensity, a behavior that is typical for many low dimensional systems involving DMSs. In contrast to this behavior, however, we have observed a decrease of the PL intensity as a function of magnetic field in multilayer structures where alternating QW layers contain DMS and non-DMS QDs. We will show evidence that this effect arises from carrier transfer between pairs of QDs from adjacent layers (double QDs) due to the large Zeeman shifts of the conduction and valence bands characteristic of DMS QDs.

Cd 1-x Zn x Te is known as promising medical X-ray detector material but CdZnTe as a single crystal is not available in large sizes. As an alternative to single crystal, CdZnTe thick film was grown by vacuum thermal evaporator to 100 μm thickness. The characteristics of thick films were analyzed by XRD, EDS, SEM and current-voltage measurements. Zn composition is x = 0.2 and resistivity is higher than 10 9 Ω cm.

A model of surface recombination velocity for n-type Hg 1− x Zn x Te is presented. It has been shown that, both experimentally and theoretically, the surface recombination velocity is dominated by Shockley–Read recombination mechanism at higher temperature and dominated by Auger process at low temperature. We have further developed a surface recombination theory for the narrow-gap semiconductor. It is concluded that the optimum conditions to reduce recombination velocity is about 2×10 11 cm −2 in the fixed charge density and the Cd 0.8 Zn 0.2 Te passivation layer thickness is between 140 and 160 nm.

Magneto-photoluminescence (PL) is used to study carrier transfer between self-assembled quantum dots (QDs) fabricated in the form of two adjacent QD layers separated by a thin barrier, one layer consisting of CdSe QDs and one of CdMnSe QDs in a ZnSe matrix. CdMnSe is a diluted magnetic semiconductor (DMS). In contrast to typical behavior of many low-dimensional DMS systems in which the application of a magnetic field B dramatically increases the PL intensity, in double-layer structures described above we observed a striking decrease of the PL intensity as a function of B. This effect indicates carrier tunneling from the CdSe to the CdMnSe dots as the ground state in the latter is lowered via the large Zeeman shift of the CdMnSe band edges.

The distribution of magnetic domain pinning fields was determined in ferromagnetic GaMnAs films using the angular dependence of the planar Hall effect. A major difference is found between the pinning field distribution in as-grown and in annealed films: the former showing a strikingly narrower distribution than the latter. This effect, which we ascribe to differences in the degree of uniformity of magnetic anisotropy, provides a better understanding of magnetic domain landscape in GaMnAs, a subject of current intense interest.

We carried out systematic planar Hall effect (PHE) measurements of GaMnAs ferromagnetic semiconductor film as a function of temperature. The two-step switching of the PHE occurring in the magnetization-reversal process was observed to change significantly as the temperature was increased. To investigate the mechanism responsible for such behavior, the temperature dependence of the PHE was continuously measured (with and without an external magnetic field) after the sample was first magnetized along one of the easy axes to produce an initial single-domain state at $3\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. A detailed temperature dependence of the magnetization direction was then obtained by taking the ratio of the planar Hall resistance measured with and without a magnetic field. As the temperature was increased, the direction of the easy axis of magnetization was observed to change from the [010] crystallographic direction to [110]. This reorientation of the easy axis direction can be understood in terms of the temperature dependence of the relative strengths of the magnetic anisotropy constants (i.e., of the ratio of uniaxial-to-cubic anisotropy) of the GaMnAs film.

The process of magnetization reversal in ferromagnetic ${\mathrm{Ga}}_{(1\ensuremath{-}x)}{\mathrm{Mn}}_{x}\mathrm{As}$ epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a) multidomain structures are formed as $\mathbit{M}$ undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

Active-site cysteine strategically positioned in the P-loop of protein-tyrosine phosphatases has been suggested to be further stabilized by hydrogen bonding arrays radiating out from the P-loop to neighboring residues. In this work, we investigated the structural role of histidine array in HC(X)(5)RS motif of the vaccinia H1-related protein phosphatase (VHR), using site-directed mutagenesis in conjunction with an extensive kinetic analysis. Conserved His-123 was mutated along with neighboring residues Tyr-78 and Thr-73. The increased pK(a) values of active-site Cys-124 found in Y78F and T73A mutants (6.51 and 6.75, respectively) were comparable to those of H123A and H123F mutants. Kinetic evaluation of Y78F and T73A mutants further implicates that the mutations perturb the relative position of Cys-124 within the P-loop. These results imply that Tyr-78 and Thr-73 make up an essential part of the His-123 array and structurally tune the Cys-124 position. Tyr-78 of VHR turns out to be the invariant Tyr reported in several protein-tyrosine phosphatases by a structure-based sequence alignment. Therefore, orientation of the imidazole ring of His-123 by the invariant Tyr-78 is crucial for maintaining the proper position of Cys-124 in the P-loop.

RNA of RNA-DNA hybrids can be degraded by ribonucleases H present in all organisms including the eukaryote Saccharomyces cerevisiae. Determination of the number and roles of the RNases H in eukaryotes is quite feasible in S. cerevisiae.Two S. cerevisiae RNases H, related to Escherichia coli RNase HI and HII, are not required for growth under normal conditions, yet, compared with wild-type cells, a double-deletion strain has an increased sensitivity to hydroxyurea (HU) and is hypersensitive to caffeine and ethyl methanesulphonate (EMS). In the absence of RNase H1, RNase H2 activity increases, and cells are sensitive to EMS but not HU and are more tolerant of caffeine; the latter requires RNase H2 activity. Cells missing only RNase H2 exhibit increased sensitive to HU and EMS but not caffeineMutant phenotypes infer that some RNA-DNA hybrids are recognized by both RNases H1 and H2, while other hybrids appear to be recognized only by RNase H2. Undegraded RNA-DNA hybrids have an effect when DNA synthesis is impaired, DNA damage occurs or the cell cycle is perturbed by exposure to caffeine suggesting a role in DNA replication/repair that can be either beneficial or detrimental to cell viability.

Recent studies have suggested that p53 regulates the G2 checkpoint in the cell cycle and that this function is required for the maintenance of genomic integrity. In this study, we investigated a regulatory role of p53 specifically in G2-M transition. Human bladder carcinoma cells lacking functional p53 were synchronized at G1-S, which is preceded by p53-mediated G1 arrest. p53 expression in the synchronized cells was induced by infection with a recombinant adenovirus that encodes p53. After release from the G1-S arrest, the cells progressed to S-phase and G2 but failed to enter mitosis. Biochemical analysis showed that p53 inhibits cell cycle-dependent expression of cdc2 and cyclin B1 and consequently inhibits cdc2 kinase. The role of cyclin B1-associated cdc2 kinase in p53-mediated G2-M arrest was further investigated by expression of both cyclin B1 and cdc2AF, in which inhibitory phosphorylation sites were substituted. The cells expressing both cdc2AF and cyclin B1 showed a constitutive activation of cdc2 kinase during cell cycle progression and passed through G2-M regardless of p53 expression. Therefore, inactivation of cdc2 kinase through cdc2 and cyclin B1 repression is an essential step in p53-mediated G2-M arrest.

To investigate the function of protein kinase C (PKC)-delta, we mutated its ATP binding site by converting the invariant lysine in the catalytic domain (amino acid 376) to an arginine. Expression vectors containing wild type and mutant PKC-delta cDNAs were generated either with or without an influenza virus hemagglutinin epitope tag. After expression in 32D cells by transfection, the PKC-delta ATP binding mutant (PKC-delta K376R) was not able to phosphorylate itself or the PKC-delta pseudosubstrate region-derived substrate, indicating that PKC-delta K376R was an inactive enzyme. PKC activity was inhibited by 67% in 32D cells coexpressing both PKC-delta wild type (PKC-delta WT) and PKC-delta K376R when compared to 32D cells expressing only PKC-delta WT. Mixture of PKC-delta WT and PKC-delta K376R kinase sources in vitro also reduced the enzymatic activity of PKC-delta WT. These results suggest that PKC-delta K376R competes with PKC-delta WT and inhibits PKC-delta WT phosphorylation of its in vitro substrate. While PKC-delta WT overexpressed in 32D cells demonstrated 12-O-tetradecanoylphorbol-13-acetate (TPA)-dependent translocation from the cytosolic to the membrane fraction, PKC-delta K376R was exclusively localized in the membrane fraction even prior to TPA stimulation. Unlike PKC-delta WT which was phosphorylated on tyrosine residue(s) only after TPA treatment, PKC-delta K376R was constitutively phosphorylated on tyrosine residue(s). Although exposure of PKC-delta WT transfectants to TPA induced 32D monocytic differentiation, the 32D/PKC-delta K376R transfectants were resistant to TPA-induced differentiation. Thus, expression of active PKC-delta is required to mediate 32D monocytic differentiation in response to TPA stimulation.

We have investigated the magnetization reorientation process of GaMnAs ferromagnetic films by changing external field direction in planar Hall effect (PHE) measurement. While the angular dependences of PHE data taken with clockwise and counterclockwise under strong magnetic field (i.e., above 400Oe) are completely overlapped without hysteresis, they are significantly different under small magnetic field (i.e., below 50Oe) by exhibiting nonabrupt hysteresis. We have analyzed such angular dependence of PHE using the magnetic free energy based on Stoner-Wohlfarth model. The behavior observed under the high field was well understood in terms of coherent rotation of magnetization in the form of single domain. However, the nonabrupt hysteric behavior observed with low field cannot be explained by a single domain picture and requires involvement of multidomain structures.

The authors show that staggered asymmetric planar Hall resistance (PHR) loops observed in GaMnAs ferromagnetic semiconductor films with biaxial in-plane magnetic anisotropy result in four stable resistance states at zero magnetic field owing to the formation of a stable multidomain structure during magnetization reversal. The values of PHR can be systematically controlled by changing the direction and the scanning range of the applied magnetic field. The possibility of a quaternary memory device based on the observed four PHR states is demonstrated by obtaining consistent results in the writing process using appropriate sequences of magnetic field pulses.

A series of GaMnAs epilayers grown on GaInAs buer layers have been investigated. The concentrations of Mn in the GaMnAs layer and In in the GaInAs layer were varied in the series, for which the tensile strain condition for the GaMnAs layer are systematically changed. The X-ray measurement provided the lattice constants of the layers, from which the stain of the GaMnAs layer was determined. The magneto-transport data revealed in-plane anisotropy in the GaMnAs sample grown on a GaInAs buer with a low concentration of In. Such in-plan magnetic anisotropy of the GaMnAs layer continuously changed to a vertical magnetic anisotropy when the tensile strain was increased in the sample grown on the GaInAs buer with a higher In concentration. This experiment clearly demonstrated that the magnetic anisotropy of GaMnAs could be continuously engineered by using the strain introduced by the GaInAs buer layers.

When Saccharomyces cerevisiae cells grown at 23 degrees C were transferred to 36 degrees C, they initiated synthesis of heat shock proteins, acquired thermotolerance to a lethal heat treatment given after the temperature shift, and arrested their growth transiently at the G1 phase of the cell division cycle. The bcy1 mutant which resulted in production of cyclic AMP (cAMP)-independent protein kinase did not synthesize the three heat shock proteins hsp72A, hsp72B, and hsp41 after the temperature shift. The bcy1 cells failed to acquire thermotolerance to the lethal heat treatment and were not arrested at the G1 phase after the temperature shift. In contrast, the cyr1-2 mutant, which produced a low level of cAMP, constitutively produced three heat shock proteins and four other proteins without the temperature shift and was resistant to the lethal heat treatment. The results suggest that a decrease in the level of cAMP-dependent protein phosphorylation results in the heat shock response, including elevated synthesis of three heat shock proteins, acquisition of thermotolerance, and transient arrest of the cell cycle.