1. Structure evolution and microwave dielectric characteristics of Hf1−xSnxO2 ceramics.
- Author
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Ding, Yi Han, Huang, Jun Chao, Li, Lei, and Chen, Xiang Ming
- Subjects
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CERAMICS , *MICROWAVES , *DIELECTRICS , *DIELECTRIC loss , *SPACE groups , *PHASE space , *STRUCTURAL stability - Abstract
High Q (Hf1−xSnx)O2 ceramics were prepared via a standard solid‐state reaction route, and the microwave dielectric characteristics were investigated systematically together with the structure evolution. With increasing x, the structure changed from HfO2 (monoclinic in space group P21/c, x = 0 and 0.03) to Hf0.77Sn0.23O2 (orthorhombic in space group Pbcn, x = 0.23), while the two‐phase structure: HfO2 major phase and Hf0.77Sn0.23O2 secondary phase, was determined for x = 0.05–0.21, and Hf0.77Sn0.23O2 major phase combined with SnO2 tetragonal secondary phase in space group P42/mnm was confirmed for x = 0.30–0.40. The Qf value was significantly increased from 24,500 to 167,650 GHz by Sn‐substitution, and the best combination of microwave dielectric characteristics was obtained in Hf0.77Sn0.23O2 ceramics: εr = 17.2, Qf = 167 650 GHz at 9.6 GHz and 230 710 GHz at 26.1 GHz, and τf = −52.6 ppm/°C. The dielectric loss was deeply linked with the structure stability and lattice‐distortion. Also, the phase composition, the bond strength, as well as the degree of covalency, had a tight connection with dielectric loss. The present ceramics were expected to be the promising candidates as low‐εr microwave dielectric ceramics. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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