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$\beta $ -Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in $\beta $ -Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was $88~mm\,\! \cdot \, K/W$. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches. [ABSTRACT FROM AUTHOR]

GaN HEMTs for high-frequency operation are now exhibiting outstanding results in both RF performances and long-term stability, but at the moment there is not a unique indication of which failure mechanism affects the device performances in long-time scale, nor a proved technique which allows to identify the best failure accelerating factor useful for a consistent life-time extraction. In this topic, the paper tries to point-out the efficacy of short-term tests on the investigation of failure modes on two generations of AlGaN/GaN 0.25 μm gate-length HEMT transistors, highlighting the failure signatures corresponding to the early appearance of the failure modes typical of this technology: (i) a first mode correlated with a limited performance degradation marked by a left threshold voltage shift, and (ii) a second much more degrading failure mode, associated with a right threshold voltage shift. As a result, this simple preliminary investigation gives a consistent evaluation of the really improved reliability behaviour of the new HEMT technology, which shows excellent robustness from high-field to extremely high-power bias conditions, pushing out the more damaging failure mechanism from the typical operating conditions. [ABSTRACT FROM AUTHOR]