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The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented., Comment: TIPP 2023 Proceedings

The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.

Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software stack shared accross different projects, thereby drastically reducing the development effort and cost. It consists of a custom Control and Readout (CaR) board and a commercial Xilinx Zynq System-on-Chip (SoC) platform. The SoC platform runs a full Yocto distribution integrating the custom software framework (Peary) and a custom FPGA firmware built within a common firmware infrastructure (Boreal). The CaR board provides a hardware environment featuring various services such as powering, slow-control, and high-speed data links for the target detector prototype. Boreal and Peary, in turn, offer firmware and software architectures that enable seamless integration of control and readout for new devices. While the first version of the system used a SoC platform based on the ZC706 evaluation board, migration to a Zynq UltraScale+ architecture is progressing towards the support of the ZCU102 board and the ultimate objective of integrating the SoC functionality directly into the CaR board, eliminating the need for separate evaluation boards. This paper describes the Caribou system, focusing on the latest project developments and showcasing progress and future plans across its hardware, firmware, and software components., Comment: PIXEL-2024 Conference Proceeding

This contribution reports on characterisation results of a large-area (2$~\mathrm{cm}^2$) small pitch (55$~\mu$m) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. The ilGAD sensors were produced by Micron Semiconductor Ltd with the goal to obtain good gain uniformity and maximise the fill-factor -- an issue present with standard small-pitch LGAD designs. We have conducted detailed performance evaluations using both X-ray calibrations and beam tests. An X-ray fluorescence setup has been used to obtain energy calibration and to identify the optimal operating settings of the new devices, whereas the extensive beam tests allowed for a detailed evaluation of the detector performance. The beam-tests were performed at the CERN SPS North Area H6 beamline, using a 120 GeV/c pion beam. The reference tracking and time-stamping is achieved by a Timepix3-based beam telescope setup. The results show a gain of around 5 with very good uniformity, measured across the whole gain area, as well as a hit time resolution down to 1.3 ns without correcting for the time-walk effects. Furthermore, it is shown that the gain opens the possibility of a good X-ray energy resolution down to 4.5 keV.

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information. The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described. Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results., Comment: 22 pages, 25 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $\mu$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach., Comment: 6 pages, 5 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D program and the AIDAinnova collaboration, innovative and scalable hybridization concepts are under development for pixel-detector applications in future colliders. This contribution presents recent results of a newly developed in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA). The ACA interconnect technology replaces solder bumps with conductive micro-particles embedded in an epoxy layer applied as either film or paste. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACA using a flip-chip device bonder. A specific pixel-pad topology is required to enable the connection via micro-particles and create cavities into which excess epoxy can flow. This pixel-pad topology is achieved with an in-house Electroless Nickel Immersion Gold process that is also under development within the project. The ENIG and ACA processes are qualified with a variety of different ASICs, sensors, and dedicated test structures, with pad diameters ranging from 12 {\mu}m to 140 {\mu}m and pitches between 20 {\mu}m and 1.3 mm. The produced assemblies are characterized electrically, with radioactive-source exposures, and in tests with high-momentum particle beams. A focus is placed on recent optimization of the plating and interconnect processes, resulting in an improved plating uniformity and interconnect yield., Comment: Procceding to IPRD23 conference in Siena 2023

Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches ranging from 8.66 to 20 micrometers. Four pixels are transmitting an analog output signal and 64 are transmitting binary hit information. Various design variations are explored, aiming at accelerating the charge collection and making the timing of the charge collection more uniform over the pixel area. Signal treatment of the analog waveforms, as well as reconstruction of digital position, time and charge information, is carried out off-chip. This contribution introduces the design of the sensor and readout system and presents performance results for various pixel designs achieved in recent test beam measurements with external tracking and timing reference detectors. A time resolution below 150 ps is obtained at full efficiency for all pixel pitches., Comment: 15 pages, 15 figures, content as published in NIM A as part of a special issue for the ULITIMA 2023 conference

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission., Comment: 7 pages, 8 figures, submitted to IEEE Xplore as conference record for 2022 IEEE NSS/MIC/RTSD

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at +20 C and a detection efficiency of 99% for a DPTS irradiated with a dose of $10^{15}$ 1 MeV n$_{\mathrm{eq}}/$cm$^2$. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels., Comment: v4: Corrected Table 1. v3: Implemented reviewers' comments. v2: Updated threshold calibration method. Implemented colorblind friendly color palette in all figures. Updated references

Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R\&D phase, especially for small-scale applications, such interconnect technologies need to be suitable for the assembly of single dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. Recent results of two novel interconnect methods for pixel pitches of 25um and 55um are presented in this contribution -- an industrial fine-pitch SnAg solder bump-bonding process adapted to single-die processing using support wafers, as well as a newly developed in-house single-die interconnection process based on ACF. The fine-pitch bump-bonding process is qualified with hybrid assemblies from a recent bonding campaign at Frauenhofer IZM. Individual CLICpix2 ASICs with 25um pixel pitch were bump-bonded to active-edge silicon sensors with thicknesses ranging from 50um to 130um. The device characterisation was conducted in the laboratory as well as during a beam test campaign at the CERN SPS beam-line, demonstrating an interconnect yield of about 99.7%. The ACF interconnect technology replaces the solder bumps by conductive micro-particles embedded in an epoxy film. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACF using a flip-chip device bonder. The required pixel pad topology is achieved with an in-house ENIG plating process. This newly developed ACF hybridisation process is first qualified with the Timepix3 ASICs and sensors with 55um pixel pitch. The technology can be also used for ASIC-PCB/FPC integration, replacing wire bonding or large-pitch solder bumping techniques., Comment: 23rd iWoRiD proceedings

Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective on the optimisation and characterisation of silicon sensors. In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix Squared framework are presented for a monolithic CMOS pixel sensor with a small collection diode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.

Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from multiple devices based on timestamps. Hit timing information, available with high precision from an increasing number of detectors, can be used in clustering and tracking to reduce combinatorics. Several algorithms, including an implementation of Millepede-II, are provided for offline alignment. A graphical user interface enables direct monitoring of the reconstruction progress and can be employed for quasi-online monitoring during data taking. This work introduces the Corryvreckan framework architecture and user interface, and provides a detailed overview of the event building algorithm. The reconstruction and analysis capabilities are demonstrated with data recorded at the DESY II Test Beam Facility using the EUDAQ2 data acquisition framework with an EUDET-type beam telescope, a Timepix3 timing reference, a fine-pitch planar silicon sensor with CLICpix2 readout and the AIDA Trigger Logic Unit. The individual steps of the reconstruction chain are presented in detail.

Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics. In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the Allpix$^2$ framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data. The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. Moreover, visualization plots extracted from the charge carrier drift model of the framework can aid in understanding the charge propagation behavior in different regions of the sensor., Comment: 15 pages, 18 figures

Thin planar silicon sensors with a pitch of 55um, active edge and various guard ring layouts are investigated, using two-dimensional finite-element T-CAD simulations. The simulation results have been compared to experimental data, and an overall good agreement is observed. It is demonstrated that 50um thin planar silicon sensors with active edge with floating guard ring or without guard ring can be operated fully efficiently up to the physical edge of the sensor. The simulation findings are used to identify suitable sensor designs for application in the high-precision vertex detector of the future CLIC linear $e^+e^-$ collider.

Silicon pad sensors are proposed as active material in highly granular sampling calorimeters of future collider experiments such as the Compact Linear Collider (CLIC) or the International Linear Collider (ILC). The electromagnetic section of these designs often include O(1000 m$^2$) of silicon pad sensors. For the luminosity measurement, a dedicated forward calorimeter called LumiCal is foreseen. More recently, the CMS experiment has decided to adopt the same concept in its endcap calorimeter upgrade for the HL-LHC. The sensors are typically produced from 6- or 8-inch wafers and consist of a few hundred smaller cells, each with an area of O(0.1 to 1 $\text{cm}^2$). For the prototyping phase of these projects, several design choices have to be evaluated while for mass production, thousands of sensors have to be tested for quality control. For the electrical characterisation of these sensors, it is important to bias them under realistic conditions. To fulfil these requirements, ARRAY, a compact, modular and cost efficient system for large area silicon pad sensor characterisation has been developed and successfully commissioned. It consists of two plugin printed circuit boards: an active switching matrix with 512 input channels that holds all controls and a passive probe card that connects to the sensor. The latter can then be adapted to any sensor geometry. All design files are open source. The system has been used to measure currents ranging from 500 pA to 5 $\mu$A and capacitances between 5 pF and 100 pF. A precision of better than 0.2 pF on capacitance measurements in that range can be achieved. Examples of calibration and measurement results for leakage current and capacitance are presented., Comment: preprint submitted to NIM A, version 2

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer., Comment: Proceedings of the PIXEL 2018 Workshop

Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by timewalk. In this paper, a method for pixel-by-pixel calibration of the time response is presented. Assemblies of Timepix3 ASICs bump-bonded to thin planar silicon pixel sensors of different thicknesses between 50 um and 150 um are calibrated and characterised in particle beams. For minimum ionising particles, time resolutions down to 0.72 $\pm$ 0.04 ns are achieved., Comment: preprint submitted to JINST, revision 1

Together with the recent CLIC detector model CLICdet a new software suite was introduced for the simulation and reconstruction of events in this detector. This note gives a brief introduction to CLICdet and describes the CLIC experimental conditions at 380 GeV and 3 TeV, including beam-induced backgrounds. The simulation and reconstruction tools are introduced, and the physics performance obtained is described in terms of single particles, particles in jets, jet energy resolution and flavour tagging. The performance of the very forward electromagnetic calorimeters is also discussed.

Allpix$^2$ (read: Allpix Squared) is a generic, open-source software framework for the simulation of silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model files describing the detector parameters. The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement separate simulation steps such as realistic charge carrier deposition with the Geant4 toolkit or propagation of charge carriers in silicon using a drift-diffusion model. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behaviour of charge carriers within the silicon, bringing a new level of realism to Monte Carlo based simulations of particle detectors. This paper provides an overview of the framework and a selection of different simulation modules, and presents a comparison of simulation results with test beam data recorded with hybrid pixel detectors. Emphasis is placed on the performance of the framework itself, using a first-principles simulation of the detectors without addressing secondary ASIC-specific effects.

On October 5/6, 2017, DESY hosted the first DESY Test Beam User Workshop [1] which took place in Hamburg. Fifty participants from different user communities, ranging from LHC (ALICE, ATLAS, CMS, LHCb) to FAIR (CBM, PANDA), DUNE, Belle-II, future linear colliders (ILC, CLIC) and generic detector R&D presented their experiences with the DESY II Test Beam Facility, their concrete plans for the upcoming years and a first estimate of their needs for beam time in the long-term future beyond 2025. A special focus was also on additional improvements to the facility beyond its current capabilities.

A detector concept based on hybrid planar pixel-detector technology is under development for the CLIC vertex detector. It comprises fast, low-power and small-pitch readout ASICs implemented in 65 nm CMOS technology (CLICpix) coupled to ultra-thin sensors via low-mass interconnects. The power dissipation of the readout chips is reduced by means of power pulsing, allowing for a cooling system based on forced gas flow. In this paper the CLIC vertex-detector requirements are reviewed and the current status of R&D on sensors, readout and detector integration is presented., Comment: 12 pages, 7 figures. Talk presented at the 13th Topical Seminar on Innovative Particle and Radiation Detectors (IPRD13), 7 - 10 October 2013, Siena, Italy

This paper summarizes the physics potential of the CLIC high-energy e+e- linear collider. It provides input to the Snowmass 2013 process for the energy-frontier working groups on The Higgs Boson (HE1), Precision Study of Electroweak Interactions (HE2), Fully Understanding the Top Quark (HE3), as well as The Path Beyond the Standard Model -- New Particles, Forces, and Dimensions (HE4). It is accompanied by a paper describing the CLIC accelerator study, submitted to the Frontier Capabilities group of the Snowmass process., Comment: Updated the author list, updated Higgs results and small changes in the text of the Higgs section, updated results on composite Higgs bosons, added and updated references. Final submission for the Snowmass proceedings

This paper addresses the issues in question for Energy Frontier Lepton and Gamma Colliders by the Frontier Capabilities group of the Snowmass 2013 process and is structured accordingly. It will be accompanied by a paper describing the Detector and Physics studies for the CLIC project currently in preparation for submission to the Energy Frontier group., Comment: Submitted to the Snowmass process 2013. arXiv admin note: substantial text overlap with arXiv:1208.1402

We present the second in a series of studies into the forward tracking system for a future linear $ e^+ e^- $ collider with a center-of-mass energy in the range from 250 GeV to 3 TeV. In this note a number of specific challenges are investigated, that have caused a degradation of the tracking and vertexing performance in the forward region in previous experiments. We perform a quantitative analysis of the dependence of the tracking performance on detector design parameters and identify several ways to mitigate the performance loss for charged particles emitted at shallow angle.

This document provides input from the CLIC e+e- linear collider studies to the update process of the European Strategy for Particle Physics. It is submitted on behalf of the CLIC/CTF3 collaboration and the CLIC physics and detector study. It describes the exploration of fundamental questions in particle physics at the energy frontier with a future TeV-scale e+e- linear collider based on the Compact Linear Collider (CLIC) two-beam acceleration technique. A high-luminosity high-energy e+e- collider allows for the exploration of Standard Model physics, such as precise measurements of the Higgs, top and gauge sectors, as well as for a multitude of searches for New Physics, either through direct discovery or indirectly, via high-precision observables. Given the current state of knowledge, following the observation of a \sim125 GeV Higgs-like particle at the LHC, and pending further LHC results at 8 TeV and 14 TeV, a linear e+e- collider built and operated in centre-of-mass energy stages from a few-hundred GeV up to a few TeV will be an ideal physics exploration tool, complementing the LHC. Two example scenarios are presented for a CLIC accelerator built in three main stages of 500 GeV, 1.4 (1.5) TeV, and 3 TeV, together with the layout and performance of the experiments and accompanied by cost estimates. The resulting CLIC physics potential and measurement precisions are illustrated through detector simulations under realistic beam conditions., Comment: Submitted to the European Strategy Preparatory Group

Probability Density Estimation (PDE) is a multivariate discrimination technique based on sampling signal and background densities defined by event samples from data or Monte-Carlo (MC) simulations in a multi-dimensional phase space. In this paper, we present a modification of the PDE method that uses a self-adapting binning method to divide the multi-dimensional phase space in a finite number of hyper-rectangles (cells). The binning algorithm adjusts the size and position of a predefined number of cells inside the multi-dimensional phase space, minimising the variance of the signal and background densities inside the cells. The implementation of the binning algorithm PDE-Foam is based on the MC event-generation package Foam. We present performance results for representative examples (toy models) and discuss the dependence of the obtained results on the choice of parameters. The new PDE-Foam shows improved classification capability for small training samples and reduced classification time compared to the original PDE method based on range searching., Comment: 19 pages, 11 figures; replaced with revised version accepted for publication in NIM A and corrected typos in description of Fig. 7 and 8

The ATLAS liquid argon (LAr) calorimeter system consists of an electromagnetic barrel calorimeter and two end-caps with electromagnetic, hadronic and forward calorimeters. The construction of the full calorimeter system is completed since mid-2004. The detector has been operated with LAr at nominal high voltage and fully equipped with readout electronics. Online software, monitoring tools and offline signal reconstruction have been developed for data collection and processing. Extensive tests with calibration pulses have been carried out, and the electronics calibration scheme for all 182468 channels has been exercised. Since Augst 2006, cosmic muon data have been collected together with the rest of the ATLAS detector system as part of the ATLAS commissioning program. The reconstructed LAr signals from energy deposited by cosmic rays are compared to the prediction derived from measured detector parameters and calibration pulses. The uniformity of the detector response within regions that have sufficient cosmic muons are examined. The expected performance of the LAr calorimeter for ATLAS physics, based on previous beam tests and Monte Carlo simulation, is also summarised., Comment: Parallel talk at ICHEP08, Philadelphia, USA, July 2008. 5 pages, LaTeX, 4 eps figures; v2: resubmitted article with updated style file provided by the ICHEP proceedings team. No other changes

In the late nineties several authors suggested that the extra dimensions predicted by string theory might lead to observable effects at high energy colliders. The ATLAS experiment which will start taking data at the LHC in 2007 will be an excellent place to search for such effects. The sensitivity of ATLAS to signatures of Extra Dimensions will be presented., Comment: 4 pages, 1 figure, to appear in Proceedings of SUSY06, the 14th International Conference on Supersymmetry and the Unification of Fundamental Interactions, UC Irvine, California, 12-17 June 2006

Striking events with isolated charged leptons, large missing transverse momentum and large transverse momentum of the hadronic final state were observed at the electron proton collider HERA in a data sample corresponding to a luminosity of about 130 pb-1. The H1 collaboration observed 11 events with isolated electrons or muons and with transverse momentum above 25 GeV. Only 3.4+-0.6 events were expected from Standard Model (SM) processes. Six of these events have a transverse momentum of greater than 40 GeV, while 1.3+-0.3 events were expected. The ZEUS collaboration observed good agreement with the SM. However, ZEUS found two events with a similar event topology, but tau leptons instead of electrons or muons in the final state. Only 0.2+-0.05 events were expected from SM processes. For various hypotheses the compatibility of the experimental results was investigated with respect to the SM and with respect to possible explanations beyond the SM. Prospects for the high-luminosity HERA-II data taking period are given.

A search for anomalous single-top production, ep -> etX, t -> Wb, has been made with the ZEUS detector at HERA using an integrated luminosity of 130 pb^-1. No evidence for top-quark production was found in either the leptonic or the hadronic decay channel of the W boson. The resulting constraints on single-top production via quark-flavour changing neutral current (FCNC) transitions exclude a substantial region in the FCNC t-u-gamma coupling not ruled out by other experiments., Comment: 5 pages, 2 figures, 1 table, talk presented at DIS 2003, April 23-27, St. Petersburg, Russia