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We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10K-130K), reverse bias voltage (up to -500 mV) and chopping frequency (4Hz-2000Hz). The pyroelectric coefficient is about 10^(-3) microC/cm2K in the temperature region 40 - 80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed.

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C time constant and the detectivity D* are presented.

We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage and current-voltage characteristics have been measured. The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K. The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results. The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at 80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The ideality factor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant. The zero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ, 250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38 OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~ 10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation, while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined by the Johnson noise.