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An alternative approach to the image simulation in high resolution transmission electron microscopy (HRTEM) is introduced after comparative analysis of the existing image simulation methods. The alternative method is based on considering the atom center as an electrostatic interferometer akin to the conventional off-axis electron biprism within few nanometers of focus variation. Simulation results are compared with the experimental images of 2D materials of MoS2, BN recorded under the optimum combination of third order spherical aberration (Cs)= -35 micrometers and defocus = 1, 4, and 8 nm and are found to be in good agreement.

Alternative reconstruction method is proposed on retrieving the object exit wave function (OEW) directly from the recorded image intensity pattern in high resolution transmission electron microscopy (HRTEM). The method is based on applying a modified intensity equation representing the HRTEM image. A comparative discussion is provided between the existing methodologies involved in reconstruction of OEW, off-axis electron holography and the present proposal. Phase shift extracted from the experimental images of MoS2, BN and ZnO are found to be in excellent agreement with the theoretical reference values. Additionally, it is shown that the Fourier series expansion of diffraction pattern is effective in retrieving the isolated and periodic image functions of certain form directly. However, for aperiodic object information e.g., defects, dopants, edges etc., the first method works in entirety.

In this manuscript, we describe optical emission of heterostructure of hetero-stack between 2D TMDs (MoS2, WS2, and ReS2) and BN. Similar to our previous results on the stack of similar type of TMDs, intense PL emission peak is observed around 2.13 eV but is split around 2.13eV into two or more peaks depending on the different stack of TMDs with BN. The transitions from the valence band of BN to conduction bands of different TMD stacks due to quantum coupling and specific orientation explain the strong peak in the PL spectra.

Quantitative atom counting of Zn and O atoms in zinc oxide(ZnO)epitaxial thin film by three different routes; reconstruction of phase from side and central band of atomic resolution off-axis and in-line electron holography are presented. It is found that the reconstructed phase from both side and central band and corresponding atom number for both Zn (Z = 30) and O (Z = 8) atom columns are in close agreement along with the systematic increase in thickness for thinner sample area.However, complete disagreement is observed for the thicker sample area. On the other hand,the reconstructed phase obtained via in-line holography shows no systematic change with thickness.Phase detection limits and atomic model used to count the atoms are discussed.

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

Large area MoS2 and WS2 van der Waals epitaxial thin films with complete control over number of layers including monolayer is grown by pulsed laser deposition utilizing slower growth kinetics. The films grown on c-plane sapphire show stiffening of A1g and E12g phonon modes with decreasing number of layers for both MoS2 and WS2. The observed stiffening translate into the compressive strain of 0.52 % & 0.53 % with accompanying increase in fundamental direct band gap to 1.74 and 1.68 eV for monolayer MoS2 and WS2, respectively. The strain decays with the number of layers. HRTEM imaging directly reveals the nature of atomic registry of van der Waals layers with the substrate and the associated compressive strain. The results demonstrate a practical route to stabilize and engineer strain for this class of material over large area device fabrication.