Search

In the present investigation, the Shannon entropy‐based magnetocaloric effect (MCE) of GaAs quantum dot (QD) is explored under the simultaneous influence of anharmonicity and Gaussian white noise (GWHN). The symmetry of the anharmonic potential (AHP), the manner of incorporation of GWHN, and the QD confinement interplay with great intricacy to tailor the MCE. AHP of odd (even) symmetry reduces (increases) the confinement of the system relative to the anharmonicity‐free system. Generally, the MCE profiles behave in diverse manner under additive white noise and multiplicative white noise and often show deviation from the noise‐free condition. It is also found that additive (multiplicative) noise lowers (raises) the magnitude of MCE in comparison with the noise‐free values. [ABSTRACT FROM AUTHOR]

In the present enquiry, an in‐depth analysis of internal energy, entropy, heat capacity, and Helmholtz free energy of GaAs quantum dot (QD) which contains Gaussian impurity as dopant and falls under the influence of applied Gaussian white noise (GWHN) is performed. GWHN takes additive and multiplicative routes for its entrance to the doped QD. In this study, highly delicate and complex interplay between temperature, presence/absence of GWHN, mode of incorporation of GWHN, and the particular physical parameters concerned is unveiled. The said interplay, in effect, designs the features of the thermal properties. The enquiry uncovers competitive behavior between thermal disorder and spatial disorder that also affects the said thermodynamic properties. [ABSTRACT FROM AUTHOR]

This paper explores the role of spatial extension of impurity (SEI) on two nonlinear optical (NLO) properties and two other related properties of impurity doped GaAs quantum dot (QD). The NLO properties include the electro-optic effect (EOE) and the third-order nonlinear optical susceptibility (TONOS) whereas the other two related properties being total optical dielectric function (TODF) and the intraband transition lifetime (ITL). The study also involves Gaussian white noise (GWN) which has been introduced to the doped QD through additive and multiplicative pathways. The investigation unveils the subtle interplay between GWN and SEI which ultimately fine-tunes the said NLO properties. TODF, EOE and TONOS manifest red-shift with enhancement of SEI both with and without GWN. The ITL, on the other hand, exhibits monotonic growth with increase in SEI under all conditions. Moreover, the application of GWN causes noticeable quenching of the NLO properties. And the quenching becomes more stringent in presence of multiplicative noise than its additive counterpart. [ABSTRACT FROM AUTHOR]

This work examines the role of spatial impurity extension (SIE) on a few nonlinear optical (NLO) properties of impurity-doped GaAs quantum dot (QD). The NLO properties considered are the nonlinear optical rectification (NOR), the second harmonic generation (SHG) and the third harmonic generation (THG). The study also includes 1 (GWN) which has been incorporated into the doped QD through additive and multiplicative pathways. The study uncovers the delicate interplay between GWN and SIE which ultimately fabricates the said NLO properties. NOR, SHG and THG manifest red-shift with enhancement of SIE both with and without GWN. The study also shows possibilities of attaining maximum NLO response by prudently applying GWN in a particular pathway. Depending upon the particular NLO property concerned, the presence of noise and its mode of application can either deplete or amplify it to different extents with respect to the noise-free situation. [ABSTRACT FROM AUTHOR]