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Structural and superconducting properties of high quality Niobium nanofilms with different thicknesses are investigated on silicon oxide and sapphire substrates. The role played by the different substrates and the superconducting properties of the Nb films are discussed based on the defectivity of the films and on the presence of an interfacial oxide layer between the Nb film and the substrate. The X-ray absorption spectroscopy is employed to uncover the structure of the interfacial layer. We show that this interfacial layer leads to a strong proximity effect, specially in films deposited on a SiO$_2$ substrate, altering the superconducting properties of the Nb films. Our results establish that the critical temperature is determined by an interplay between quantum-size effects, due to the reduction of the Nb film thicknesses, and proximity effects.

Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two superconducting electrodes, while a small part of the interface is well transparent. We consider the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K., Comment: The author version of the paper published originally in the open access journal "Fizika Nizkikh Temperatur", vol. 43, No. 7, 2017 (Kharkov, Ukraine) which is translated into English and simultaneously published in the USA under the name "Low Temperature Physics"

The Braess paradox encountered in classical networks is a counterintuitive phenomenon when the flow in a road network can be impeded by adding a new road or, more generally, the overall net performance can degrade after addition of an extra available choice. In this work, we discuss the possibility of a similar effect in a phase-coherent quantum transport and demonstrate it by example of a simple Y-shaped metallic fork. To reveal the Braess-like partial suppression of the charge flow in such device, it is proposed to transfer two outgoing arms into a superconducting state. We show that the differential conductance-vs-voltage spectrum of the hybrid fork structure varies considerably when the extra link between the two superconducting leads is added and it can serve as an indicator of quantum correlations which manifest themselves in the quantum Braess paradox., Comment: 9 pages, 3 figures, the author version presented at the Quantum 2017 Workshop (Torino, Italy, 7-13 May 2017) and submitted to the International Journal of Quantum Information; v2: reference 9 added and the introduction extended

We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al surface. In the superconducting state these devices have revealed a strong subgap current leakage. Analyzing Cooper-pair and quasiparticle currents across the devices, we conclude that the strong suppression of the subgap resistance comparing with conventional tunnel junctions originates from a universal bimodal distribution of transparencies across the Al-oxide barrier proposed earlier by Schep and Bauer. We suggest a simple physical explanation of its source in the nanometer-thick oxide films relating it to strong local barrier-height fluctuations which are generated by oxygen vacancies in thin aluminum oxide tunnel barriers formed by thermal oxidation., Comment: revised text and a new figure

In this paper we present the realization and a preliminary characterization of a SIS based receiver. It has been developed for the MASTER experiment that consists in a three-band SIS receiver (94, 225 and 345 GHz) for astrophysical observations through the atmospheric windows available at high altitude dry sites. The measurements performed establish an upper limit to the overall receiver noise temperature. A comparison has been tried with the MASTER requirements and with state of the art results. A noise figure of 110 K has been obtained at 94 GHz, about 22 times the quantum limit., Comment: Version accepted for publication on Journal of Infrared Millimeter and Terahertz Waves, 6 pages, 6 figures, 1 table