1,759 results on '"Deep level"'
Search Results
2. Generation of deep levels near the 4H-SiC surface by thermal oxidation
- Author
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Haruki Fujii, Mitsuaki Kaneko, and Tsunenobu Kimoto
- Subjects
SiC ,deep level ,oxidation ,Physics ,QC1-999 - Abstract
Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300 °C, indicating multiple deep levels energetically located near the conduction band edge are generated inside SiC by thermal oxidation. Analyses of the DLTS spectra acquired with changing the bias voltage revealed that the majority of deep levels is located very near the SiC surface, within about 6 nm deep region from the surface. The area density of the observed deep levels is higher than 3 × 10 ^12 cm ^−2 .
- Published
- 2024
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3. Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers.
- Author
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Slobodzyan, Dmytro, Kushlyk, Markiyan, Lys, Roman, Shykorjak, Josyp, Luchechko, Andriy, Żyłka, Marta, Żyłka, Wojciech, Shpotyuk, Yaroslav, and Pavlyk, Bohdan
- Subjects
- *
NANOSILICON , *SILICON surfaces , *SEMICONDUCTOR defects , *MAGNETIC field effects , *SILICON rectifiers , *THERMOLUMINESCENCE - Abstract
The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si–SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si–H3 complexes increases that of O3–Si–H. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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4. DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS.
- Author
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Kh., Daliev Shakhrukh and A., Ergashev Javokhir
- Subjects
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DEEP level transient spectroscopy , *HAFNIUM , *SURFACE states , *SILICON , *ATOMS - Abstract
By means of methods transient capacitance spectroscopy of deep levels has been used to study defect formation in silicon multilayer structures doped with hafnium atoms. It has been established that the presence of electrically active hafnium atoms in the silicon substrate of the MIS structures leads to an increase in the density of the surface states Nss and the appearance of distinct peaks caused by hafnium atoms with deep levels of Ec-0.23 eV and Ec-0.28 eV on n-Si
and Ev+0.35 eV on p-Si . The presence of an electroneutral hafnium impurity in the silicon substrate of the MIS structures does not lead to a change in the density of the surface states of the MIS structures and the DLTS spectra. [ABSTRACT FROM AUTHOR] - Published
- 2022
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5. Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si<Pt>.
- Author
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UTAMURADOVA, SHARIFA B. and RAKHMANOV, DILMUROD A.
- Subjects
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RARE earth metals , *RADIATION , *PLATINUM compounds , *SEMICONDUCTORS , *PHOTOLUMINESCENCE - Abstract
In this paper, we study the effect of one of the rare-earth impurities, holmium, on radiation defect formation in platinum-doped silicon. The main aim of this work was to learn the influence of one of the impurities of rare earth elements - holmium on radiation defect formation in silicon doped with platinum. Using deep level transient spectroscopy (DLTS) methods, it was found that the presence of an electrically neutral impurity Ho in the bulk of n-Si leads to an even greater decrease in the rate of formation of radiation defects than in n-Si
: the concentrations of A- and E-centers in samples of n-Si 5-6 times less than in undoped samples. It has been established that irradiation with γ-quanta of 60Co at doses Ф ≥ 6.1017quanta/cm² leads to the activation of Pt atoms in silicon. [ABSTRACT FROM AUTHOR] - Published
- 2022
6. EFFECT OF GADOLINIUM ATOMS ON DEFECT FORMATION IN SILICON DOPED WITH MOLYBDENUM IMPURITIES.
- Author
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Kh., Daliev Shakhrukh and D., Paluanova Anifa
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RARE earth metals , *GADOLINIUM , *MOLYBDENUM , *SILICON , *ATOMS - Abstract
The processes of defect formation in n-silicon doped with molybdenum, preliminarily doped with gadolinium, have been investigated by the method of DLTS. It was found that the presence of an electrically neutral impurity of gadolinium in the silicon lattice significantly increases the solubility of molybdenum. It is established that the presence of impurities of rare earth elements, in this case Mo in the volume of silicon, significantly increases the solubility of impurities of refractory elements and at the same time reduces the efficiency of the formation of thermal defects. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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7. 库车山前深层高温高压气井多封隔器分层压裂工艺.
- Author
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王克林, 张波, 李超, 刘洪涛, 何新兴, 秦世勇, and 黄锟
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GAS wells ,DRILLING fluids ,GAS reservoirs ,PROBLEM solving ,DRILLING muds ,GAS condensate reservoirs - Abstract
Copyright of Oil Drilling & Production Technology / Shiyou Zuancai Gongyi is the property of Shiyou Zuancai Gongyi Bianjibu and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
- Published
- 2021
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8. Deep-Level Characterization: Electrical and Optical Methods
- Author
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Armstrong, Andrew M., Kaplar, Robert J., Chow, Joe H., Series editor, Stankovic, Alex M., Series editor, Hill, David, Series editor, Meneghini, Matteo, editor, Meneghesso, Gaudenzio, editor, and Zanoni, Enrico, editor
- Published
- 2017
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9. Letters to Miriam Yevick, 1952, Part 1
- Author
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Talbot, Chris and Talbot, Chris, editor
- Published
- 2017
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10. Members of highly entitative groups are implicitly expected to behave consistently based on their deep-level goals instead of their shallow-level movements
- Author
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Jun Yin, Yinfeng Hu, Feng Zhang, Jiecheng Huangliang, and Jipeng Duan
- Subjects
Motivation ,Linguistics and Language ,Deep level ,Movement (music) ,Movement ,Facilitation ,Humans ,Experimental and Cognitive Psychology ,Psychology ,Goals ,Object (philosophy) ,Language and Linguistics ,Cognitive psychology - Abstract
The current study investigated whether the deep properties or shallow features of behaviors are implicitly expected to be consistent across members of highly entitative groups, by exploiting the notion that goals-as deep properties-and movements-as shallow features-can be dissociated in object-directed behaviors. Participants were asked to view group members' goal-directed behaviors toward an object. Whether perceivers implicitly expected that a new member would perform the same movement to the previously visited location (i.e., exhibit shallow feature-based behavior) or a new movement to the previously visited object (i.e., exhibit deep property-based behavior) was recorded. Study 1 revealed that perceivers implicitly expected members of a highly entitative group to approach the previously visited object with a new movement (i.e., to have a consistent goal) rather than perform the same movement to the previously visited location (i.e., to express a consistent movement). Study 2 confirmed that the responses in Study 1 were explained by group members conforming to, rather than violating, internal expectations (i.e., of consistent movement). Importantly, the implicit expectation of shared behaviors across group members relies on the goal interpretation of actions instead of the associations between actions and outcomes (Study 3). Study 4 replicated the facilitation effect of Study 1 and revealed that the goal-based expectation of common behaviors among group members is based on the majority behavior instead of a single demonstration. Hence, individuals in highly entitative groups are implicitly expected to behave consistently based on the deep properties of behaviors instead of their shallow features. (PsycInfo Database Record (c) 2022 APA, all rights reserved).
- Published
- 2022
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11. Benign Deep-Level Defects in Cesium Lead Iodine Perovskite
- Author
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Yu Zhong, Jiajia Zhang, and Gang Li
- Subjects
General Energy ,Materials science ,Lead (geology) ,chemistry ,Deep level ,Caesium ,Inorganic chemistry ,chemistry.chemical_element ,Physical and Theoretical Chemistry ,Iodine ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Perovskite (structure) - Published
- 2021
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12. The Mythological World in the Literary Texts of the Turkic-speaking Peoples: Book review of: Sharyafetdinov, R.Kh. (2021). Mythopoetics of Tatar literature: Monograph. Moscow, Berlin, Direct-Media
- Author
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Irina A. Tairova
- Subjects
Literature ,Tatar ,umai ,History ,Deep level ,business.industry ,Field (Bourdieu) ,tengri ,General Medicine ,Mythology ,tatar literature ,mythopoetics ,myth ,language.human_language ,language ,Literature (General) ,business ,sufi symbols ,PN1-6790 - Abstract
The review of the monograph by R.Kh. Sharyafetdinov "Mythopoetics of Tatar Literature" deals with new developments in the field of mythopoetics, based on Tatar artistic material. The mytho-religious approach of the researcher is analyzed, which makes it possible to study at a deep level the influence of cultural, philosophical, and religious realities on Tatar literature. For this purpose, the author of the scientific work examines the Tatar cosmogonic ideas, the mythologism of the plant and animal worlds in the works of Kul Gali, Mukhammedyar, G. Kandaly; Dardmend, G. Tukay, F. Burnash, N. Isanbet; M. Jalil; F. Karim; M. Khabibullina, N. Fattakh, R. Kutuy, R. Faizullin; R. Zaydulla, G. Yakhina.
- Published
- 2021
13. Deep Level Analysis of Legitimacy in Bengali News Sentences
- Author
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RaiPooja, DasSoma, and ChatterjiSanjay
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Bengali ,General Computer Science ,Deep level ,Computer science ,business.industry ,Internet privacy ,language ,Misinformation ,business ,Semantics ,Legitimacy ,language.human_language - Abstract
The tremendous increase in the growth of misinformation in news articles has the potential threat for the adverse effects on society. Hence, the detection of misinformation in news data has become an appealing research area. The task of annotating and detecting distorted news article sentences is the immediate need in this research direction. Therefore, an attempt has been made to formulate the legitimacy annotation guideline followed by annotation and detection of the legitimacy in Bengali e-papers. The sentence-level manual annotation of Bengali news has been carried out in two levels, namely “Level-1 Shallow Level Classification” and “Level-2 Deep Level Classification” based on semantic properties of Bengali sentences. The tagging of 1,300 anonymous Bengali e-paper sentences has been done using the formulated guideline-based tags for both levels. The validation of the annotation guideline has been done by applying benchmark supervised machine learning algorithms using the lexical feature, syntactic feature, domain-specific feature, and Level-2 specific feature in both levels. Performance evaluation of these classifiers is done in terms of Accuracy, Precision, Recall, and F-Measure. In both levels, Support Vector Machine outperforms other benchmark classifiers with an accuracy of 72% and 65% in Level-1 and Level-2, respectively.
- Published
- 2021
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14. Investigation of recombination mechanisms in Cu(In,Ga)Se2 solar cells using numerical modelling
- Author
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Samira Khelifi, Sheng Yang, Jessica de Wild, Bart Vermang, and Johan Lauwaert
- Subjects
Work (thermodynamics) ,Materials science ,Deep level ,Renewable Energy, Sustainability and the Environment ,business.industry ,Contact barrier ,Solar cell efficiency ,Differential evolution ,Optoelectronics ,General Materials Science ,Optimisation algorithm ,business ,Recombination ,Voltage - Abstract
In this work, recombination mechanisms are investigated in Cu(In, Ga)Se 2 solar cells based on numerical modelling and verified by regression analysis of the dark and light current density–voltage (J–V) curves. Loss mechanisms such as a back contact barrier, deep level defects in the absorber layer are determined by fitting the simulated cell performance with the measurements using global optimisation algorithm differential evolution. The cell performance in the fitting process includes J–V curves recorded at different temperatures and open-circuit voltage(V o c ) under different illumination intensities at 300K. The results show that for CIGSe solar cells with different preparation methods and absorber thickness, the main loss mechanisms are different. Based on the proposed numerical model and the observed loss mechanisms, suggestions are given for further improving the solar cell efficiency in each cell.
- Published
- 2021
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15. The Future of Style
- Author
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Burns, Kevin, Maybury, Mark, Argamon, Shlomo, editor, Burns, Kevin, editor, and Dubnov, Shlomo, editor
- Published
- 2010
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16. Electrical Properties of GaN and ZnO
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Oh, D. -C., Hasegawa, Masayuki, editor, Inoue, Akihisa, editor, Kobayashi, Norio, editor, Sakurai, Toshio, editor, Wille, Luc, editor, Yao, Takafumi, editor, and Hong, Soon-Ku, editor
- Published
- 2009
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17. Geological and structural characteristics of deep-level rock mass of the Udachnaya pipe deposit
- Author
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Andrei Gladkov and Evgenii Serebryakov
- Subjects
Deep level ,Geochemistry ,Economic Geology ,Geology ,Geotechnical Engineering and Engineering Geology ,Rock mass classification - Abstract
For hard rock massifs, structural disturbance is a key indicator of mining structure stability. The presence of intersecting structural elements in the massif reduces rock strength and leads to formation of potential collapse structures. In addition to that, disjunctive deformations that penetrate rock strata serve as channels for fluid migration and connect aquifers into a single system. It was established that the largest of them –faults of east-northeastern, northeastern and northwestern directions – form the kimberlite-bearing junction of the Udachnaya pipe. These faults represent zones of increased fracturing, brecciation and tectonic foliation, distinguished from adjacent areas by increased destruction of the rock mass. Specifics of tectonic fracture distribution within structural and lithological domains are determined by the presence of multidirectional prevailing systems of tectonic fracturing, as well as by differences in their quantitative characteristics. With some exceptions, the main systems form a diagonal network of fractures (northeastern – northwestern orientation), which is typical for larger structural forms – faults. Despite the differences in dip orientation of the systems, most of them correspond to identified directions, which is typical for both kimberlites and sedimentary strata. Overall disturbance of the massif, expressed in terms of elementary block volume, reaches its peak in the western ore body. For such type of deposits, friction properties of fracture structures have average values. Consideration of geological and structural data in the design and development of new levels of the deposit will allow to maintain the necessary balance between efficiency and safety of performed operations.
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- 2021
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18. Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells
- Author
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Zhenghao Liu, Bo Liu, Huan Wang, Xue Zheng, Chunlei Yang, Wenjie Ming, Han Wang, Xiao Wang, Weimin Li, and Da Li
- Subjects
Surface (mathematics) ,General Energy ,Materials science ,Deep level ,Chemical physics ,Ionic bonding ,Physical and Theoretical Chemistry ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Perovskite (structure) - Published
- 2021
- Full Text
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19. Learning intentions: a missing link to intentional teaching? Towards an integrated pedagogical framework
- Author
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Wendy Goff and Bin Wu
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Early childhood education ,Zone of proximal development ,Deep level ,Developmental and Educational Psychology ,Mathematics education ,Link (knot theory) ,Education - Abstract
There is a growing consensus in early childhood education and care (ECEC) that intentional teaching is pivotal for deep level learning, especially when teaching scientific concepts. However, intent...
- Published
- 2021
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20. Expert Views on the Inherent Value of Nature
- Author
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Drengson, Alan, editor
- Published
- 2005
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21. Diverse effects of team diversity: a review and framework of surface and deep-level diversity
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Alana E. Jansen and Ben Joseph Searle
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Organizational Behavior and Human Resource Management ,Deep level ,Ecology ,Team diversity ,0502 economics and business ,05 social sciences ,050301 education ,Psychology ,0503 education ,050203 business & management ,Applied Psychology ,Diversity (business) - Abstract
PurposeWhile diversification within organisations is seen by many to be a strategic move, there is conflicting evidence about what makes diverse teams successful. The purpose of this paper is to highlight a range of complex, and in some cases contradictory, research contributions towards several key areas of diversity within teams, and to propose a framework for integrating existing approaches and clarifying inconsistencies in this domain.Design/methodology/approachA literature review was conducted to explore several key areas of surface and deep-level diversity in teams, with the discussion included in this paper highlighting many of the inconsistencies and complexities associated with this research domain.FindingsThis review highlights the need for future research to look at the effects of surface and deep-level diversity simultaneously, over time, across multiple levels and with a broad range of contextual moderators, to examine their impact on a range of outcomes.Originality/valueIn order to account for the complexities within diversity research, the authors propose the use of the job demands-resources (JDR) model which suggests possible explanations for inconsistent findings and bridges the gap between commonly used theoretical perspectives.
- Published
- 2021
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22. Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography
- Author
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Michał Pawlak, Claudia Zavala-Lugo, Akshit Soral, Andreas Mandelis, and Alexander Melnikov
- Subjects
Materials science ,Quantitative imaging ,Deep level ,Photothermal spectroscopy ,business.industry ,Materials Chemistry ,Electrochemistry ,Optoelectronics ,Radiometry ,Wafer ,business ,Electronic, Optical and Magnetic Materials - Published
- 2021
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23. Growth and Process-Induced Deep Levels in Wide Bandgap Semiconductor GaN and SiC
- Author
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Kanegae, Kazutaka and Kanegae, Kazutaka
- Published
- 2022
24. Deep Learning Based Deep Level Tagger for Malayalam
- Author
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Sumam Mary Idicula and A P Ajees
- Subjects
General Computer Science ,Deep level ,business.industry ,Computer science ,Deep learning ,Malayalam ,language ,Artificial intelligence ,computer.software_genre ,business ,computer ,Natural language processing ,language.human_language - Abstract
Background: POS tagging is the process of identifying the correct grammatical category of words based on its meaning and context in a text document. It is one of the preliminary steps in the processing of natural language text. If any error happens in POS tagging the same will be propagated to whole NLP applications. Hence it must be handled in a genuine and precise way. Aim: The purpose of this study is to develop a deep level tagger for Malayalam which indicates the semantics of nouns and verbs in a text document. Methods: The proposed model is a two-tier architecture consisting of deep learning as well as rulebased approaches. The first tier consists of a tagging model, which is trained by a tagged corpus of 287,000 words. To improve the depth of tagging a suffix stripper is also used which can provide morhological features to the shallow machine learning model. Results: The system is trained on 2,30,000 words and tested on 57,000 words. The accuracy of tagging for the phase-1 architecture is 92.03%. Similarly the accuracy of phase-2 architecture is 98.11%. The overall accuracy of tagging is 91.82%. Conclusion: The exclusive feature of the proposed tagger is its depth in tagging the noun words. This deep level information can be used in various semantic processing applications of the natural language text like anaphora resolution, text summarization, machine translation, etc.
- Published
- 2021
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25. How TMT diversity influences open innovation: an empirical study on biopharmaceutical firms in China
- Author
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Yi Xu, Zhiying Liu, Lihua Fu, Chen Lu, and Suqin Liao
- Subjects
Deep level ,Strategy and Management ,05 social sciences ,Management Science and Operations Research ,050905 science studies ,Surface level ,Biopharmaceutical ,Empirical research ,0502 economics and business ,Top management ,Business ,0509 other social sciences ,China ,050203 business & management ,Industrial organization ,Open innovation ,Diversity (business) - Abstract
Despite the significant impact of top management team (TMT) upon innovation, few relevant research efforts could be found in the existing open innovation literature. The role of TMT diversity in sh...
- Published
- 2021
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26. The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction.
- Author
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Li, Yapeng, Li, Yingfeng, Wang, Jianyuan, He, Zhirong, Zhang, Yonghong, Yu, Qi, and Hou, Juncai
- Subjects
- *
ZINC oxide , *HETEROJUNCTIONS , *ELECTRIC properties of solids , *VALENCE bands , *DEEP level transient spectroscopy , *ELECTRON spectroscopy - Abstract
The ZnO films were deposited on the surface of n-Si(111) substrate by pulsed laser deposition for fabrication of ZnO/n-Si(111) heterojunction. The carrier transport mechanism, deep level defects and band offsets at the interface of ZnO/n-Si(111) heterojunction were investigated by current- voltage measurement, deep level transient spectroscopy, X-ray photoelectron spectroscopy, respectively. The results showed that the barrier height and ideality factor values varied in the different linear voltage range by using the thermionic emission model, which was due to the deep level participated in carrier transport. Meanwhile, it was found that one deep level appeared at the interface of ZnO/n-Si(111) heterojunction with densities of the deep level about 8.5 × 10 16 cm −3 and activation energies about 224 m eV, which originated from O 2− vacancies of ZnO films. In addition, the valence band offset of the ZnO/n-Si(111) heterojunction can be calculated to be −2.4 ± 0.15 eV. The conduction band offset is deduced to be −3.5 ± 0.15 eV from the valence band offset value, indicating that the band offsets of ZnO/n-Si(111) heterojunction is a type-II band alignment. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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27. Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates.
- Author
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Kato, Masashi, Ichikawa, Naoto, and Nakano, Yoshitaka
- Subjects
- *
SURFACE roughness , *EPITAXY , *THERMOELECTRIC power - Abstract
• The defects in p-type 4H-, 6H- and 3C-SiC epilayers on SiC substrates were characterised. • Structural defects in the SiC epilayers grown on on-axis substrates induced deep levels. • Step-flow epitaxy is the best method for p-type SiC epilayers fabrication. The defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates were characterised. The surface roughness after etching and the full width at half maximum of the X-ray rocking curves of the epilayers revealed more dislocations in those grown on the on-axis substrates than on the off-axis ones; the deep levels were also significant for the epilayers grown on the on-axis substrates. These results suggested that the dislocations, double-positioning boundaries and stacking faults in the SiC epilayers grown on on-axis substrates induced deep levels in the bandgap. Step-flow epitaxy on off-angle substrates is the best method for p-type SiC epilayers fabrication, and thus we need novel growth technique to obtain high quality 3C-SiC epilayers. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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28. Assessing Organizational Financial Health of Nonprofit Arts Organizations
- Author
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Kirchner, Theresa A., Markowski, Edward P., Ford, John B., Academy of Marketing Science, Groza, Mark D., editor, and Ragland, Charles B., editor
- Published
- 2016
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29. The Relationship Between Team Deep‐Level Diversity and Team Performance: A Meta‐Analysis of the Main Effect, Moderators, and Mediating Mechanisms
- Author
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María del Carmen Triana, Seo-Young Byun, Kwanghyun Kim, Dora María Delgado, and Winfred Arthur
- Subjects
Knowledge management ,Deep level ,business.industry ,Team diversity ,Management of Technology and Innovation ,Strategy and Management ,Meta-analysis ,Main effect ,Business and International Management ,business ,Psychology ,Diversity (business) - Published
- 2021
- Full Text
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30. Affine Deligne–Lusztig varieties at infinite level
- Author
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Alexander B. Ivanov and Charlotte Chan
- Subjects
Pure mathematics ,Conjecture ,Deep level ,General Mathematics ,010102 general mathematics ,Structure (category theory) ,16. Peace & justice ,01 natural sciences ,Character (mathematics) ,Mathematics::K-Theory and Homology ,Field extension ,Mathematics::Quantum Algebra ,0103 physical sciences ,010307 mathematical physics ,Affine transformation ,0101 mathematics ,Variety (universal algebra) ,Mathematics::Representation Theory ,Mathematics ,Singular homology - Abstract
We initiate the study of affine Deligne–Lusztig varieties with arbitrarily deep level structure for general reductive groups over local fields. We prove that for $${{\,\mathrm{GL}\,}}_n$$ and its inner forms, Lusztig’s semi-infinite Deligne–Lusztig construction is isomorphic to an affine Deligne–Lusztig variety at infinite level. We prove that their homology groups give geometric realizations of the local Langlands and Jacquet–Langlands correspondences in the setting that the Weil parameter is induced from a character of an unramified field extension. In particular, we resolve Lusztig’s 1979 conjecture in this setting for minimal admissible characters.
- Published
- 2021
- Full Text
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31. How I investigate minimal residual disease in acute lymphoblastic leukemia
- Author
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Nydia Strachman Bacal, Rodrigo de Souza Barroso, Rodolfo Patussi Correia, Flávia Arandas de Sousa, Laiz Cameirão Bento, and Paulo Vidal Campregher
- Subjects
Oncology ,medicine.medical_specialty ,Neoplasm, Residual ,T-Lymphocytes ,Lymphoblastic Leukemia ,Clinical Biochemistry ,Receptors, Antigen, T-Cell ,030204 cardiovascular system & hematology ,Polymerase Chain Reaction ,Flow cytometry ,Fusion gene ,03 medical and health sciences ,0302 clinical medicine ,hemic and lymphatic diseases ,Internal medicine ,Animals ,Humans ,Medicine ,Gene Rearrangement ,B-Lymphocytes ,Deep level ,medicine.diagnostic_test ,business.industry ,Biochemistry (medical) ,High-Throughput Nucleotide Sequencing ,Hematology ,General Medicine ,Precursor Cell Lymphoblastic Leukemia-Lymphoma ,Flow Cytometry ,Minimal residual disease ,body regions ,Clinical trial ,Measurable Disease ,Real-time polymerase chain reaction ,Immunoglobulin G ,Gene Fusion ,business ,030215 immunology - Abstract
Minimal Residual Disease (MRD) is the most important independent prognostic factor in acute lymphoblastic leukemia (ALL) and refers to the deep level of measurable disease in cases with complete remission by conventional pathologic analysis, especially by cytomorphology. MRD can be detected by multiparametric flow cytometry, molecular approaches such as quantitative polymerase chain reaction for immunoglobulin and T-cell receptor (IG/TR) gene rearrangements or fusion genes transcript, and high-throughput sequencing for IG/TR. Despite the proven clinical usefulness in detecting MRD, these methods have differences in sensitivity, specificity, applicability, turnaround time and cost. Knowing and understanding these differences, as well as the principles and limitations of each technology, is essential to laboratory standardization and correct interpretation of MRD results in line with treatment time points, therapeutic settings, and clinical trials. Here, we review the methodological approaches to measure MRD in ALL and discuss the advantages and limitations of the most commonly used techniques.
- Published
- 2021
- Full Text
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32. Deformations and fracture of rock strata during deep level potash mining
- Author
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A. A. Baryakh, S.Yu. Lobanov, and A.K. Fedoseev
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Deep level ,Mining engineering ,Stage (stratigraphy) ,Plane (geometry) ,Potash ,Fracture (geology) ,Deformation (meteorology) ,Rock mass classification ,Geology ,Finite element method ,Earth-Surface Processes - Abstract
Increased mining depths entail both increased rock pressures and complicated rock mass structures. When it comes to mining mineral salts, there is a significant difference in the strength and deformation properties of rocks developed in the geological section, which affects the nature of deformation and the destruction of underworked strata. During the initial development stage of the Gremyachinskoye deposit, where the mining of potash salts at depths of more than 1,000 meters has been planned, a mathematical model of the undermined mass has been developed, reflecting the main features of its geological structure and the design parameters of a pillar mining system. The mathematical modelling estimated safe conditions of undermining the waterblocking strata and the expected deformations at the earth’s surface. This was carried out with an elastic-plastic plane formulation using the finite element method. The time factor was accounted for based on the developed modification of the method of alternating deformation moduli. Based on the mathematical modelling performed, it was shown that geomechanical models of new deposits of potash salts being prepared for development can be calibrated using the information available from analogous deposits; this information can be subsequently corrected, reflecting certain differences in the geological structure and parameters of the mining system. Based on the numerical modelling results, an increase in the boundary angle of the subsidence trough of the earth’s surface was established due to the significant depth of mining and the presence of hard rock strata in the geological section, which allowed the linear dimensions of the protective pillars under critical facilities to be reduced, alongside minimising losses of potash ore.
- Published
- 2021
- Full Text
- View/download PDF
33. Alloy engineering in mixed Sn–Ge perovskites for photovoltaic application
- Author
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Jian Xu, Jian-Bo Liu, Baixin Liu, and Yu-Qian Zhou
- Subjects
Materials science ,Deep level ,Renewable Energy, Sustainability and the Environment ,Photovoltaic system ,Alloy ,Energy conversion efficiency ,02 engineering and technology ,General Chemistry ,engineering.material ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Chemical physics ,engineering ,General Materials Science ,0210 nano-technology ,Electronic band structure - Abstract
Recently, mixed Sn–Ge perovskites have been proposed as promising lead-free candidates in the photovoltaic (PV) field. However, as an important component of mixed Sn–Ge perovskites, the all-inorganic Sn-based perovskites have a dominant defect, SnI (Sn replacing I, anti-site), which induces a deep level in the band structure and limits the power conversion efficiency. Therefore, it is interesting to discover whether SnI and GeI (Ge replacing I, anti-site) can still act as non-radiative recombination centers in mixed Sn–Ge perovskites. Using first-principles calculations, we explored the effects of SnI and GeI in CsGe1−xSnxI3 (x = 0.25, 0.50, and 0.75) on the PV performances. It was shown that both SnI and GeI are benign only in CsGe0.5Sn0.5I3, and we suggest that CsGe0.5Sn0.5I3 is a promising light-absorbing material with benign defects (GeI and SnI), strong light absorption, and small carrier effective masses. Interestingly, the concerted action of alloying on both band edges and defect states was found to result in better defect properties in CsGe0.5Sn0.5I3, and this is different from results of previous studies where the modulation of introducing alloys on defects is mainly caused by regulating the band edges alone. Our work not only provides theoretical guidance for the experimental synthesis of mixed Sn–Ge perovskites with superior PV performances, but it also shows the potential of alloy engineering in regulating defect levels in perovskites.
- Published
- 2021
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34. Synergistic incorporation of NaF and CsF PDT for high efficiency kesterite solar cells: unveiling of grain interior and grain boundary effects
- Author
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Wen-Hui Zhou, Yafang Qi, Zhengji Zhou, Xiaohuan Chang, Sixin Wu, Junjie Fu, Dongxing Kou, Shengjie Yuan, and Zhi Zheng
- Subjects
Materials science ,Deep level ,Renewable Energy, Sustainability and the Environment ,business.industry ,02 engineering and technology ,General Chemistry ,engineering.material ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Acceptor ,0104 chemical sciences ,Chemical engineering ,Photovoltaics ,Phase (matter) ,engineering ,General Materials Science ,Grain boundary ,Kesterite ,0210 nano-technology ,business - Abstract
The introduction of alkali metal (AM) post-deposition treatment (PDT) has led to the consecutive breakthrough of world record efficiencies for Cu(In,Ga)Se2 photovoltaics. However, for the derivative Cu2SnZn(S,Se)4 (CZTSSe) solar cells, the corresponding verdict seems partially unjustified due to the difference in defect chemical environment and phase structure, and the most effective incorporation means of AMs is still a mystery. In this work, for the first time, we developed a dual AM synergistic incorporation strategy combining light and heavy AMs by post-depositing CsF after NaF-PDT to improve the efficiency of CZTSSe solar cells. The relevant microscopic-electrical advantages with regard to the different roles of NaF and CsF PDT are discussed in more detail. It was found that the Na atoms are randomly dispersed both in the grain interior (GI) and grain boundaries (GBs), significantly increasing the acceptor concentration and passivating the deep level defects to enhance the Voc. In contrast, the Cs atoms are mainly segregated at the GBs, primarily increasing the potential of the GBs and improving the FF. The prominent electric benefits of Cs at the GBs and Na in the GI finally increase the device efficiency from 10.12% to 12.16%. Our findings solve the difficulty in obtaining the available Voc and FF for future high efficiency research and should serve as a basis for the in-depth understanding of AM-PDT in kesterite photovoltaics.
- Published
- 2021
- Full Text
- View/download PDF
35. Deep-Level Mineral Mining in Siberia and Russian Far East: Actual Objectives and Trends of Research
- Author
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M. V. Kurlenya
- Subjects
Mineral ,Geography ,Deep level ,Earth science ,Metals and Alloys ,Geology ,Geotechnical Engineering and Engineering Geology ,Far East - Published
- 2021
- Full Text
- View/download PDF
36. EFFECT OF GADOLINIUM ATOMS ON DEFECT FORMATION IN SILICON DOPED WITH MOLYBDENUM IMPURITIES
- Author
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Anifa D. Paluanova and Shakhrukh Kh. Daliev
- Subjects
Materials science ,chemistry ,Deep level ,Silicon ,Impurity ,Molybdenum ,Gadolinium ,Diffusion ,Doping ,Inorganic chemistry ,chemistry.chemical_element - Published
- 2021
- Full Text
- View/download PDF
37. Photoconductivity
- Author
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Seeger, Karlheinz and Seeger, Karlheinz
- Published
- 1999
- Full Text
- View/download PDF
38. Chemical trends of deep levels in van der Waals semiconductors
- Author
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Sarah Warkander, Jun Kang, Anthony Salazar, Jianwei Miao, Oscar D. Dubon, Kechao Tang, Junqiao Wu, Yabin Chen, Wladek Walukiewicz, Jiaman Liu, Kazutaka Eriguchi, Penghong Ci, Xuezeng Tian, and Sefaattin Tongay
- Subjects
Materials science ,Band gap ,Science ,General Physics and Astronomy ,FOS: Physical sciences ,02 engineering and technology ,Two-dimensional materials ,010402 general chemistry ,01 natural sciences ,Article ,General Biochemistry, Genetics and Molecular Biology ,Crystal ,symbols.namesake ,Vacancy defect ,lcsh:Science ,Conduction band ,Condensed Matter - Materials Science ,Multidisciplinary ,Deep level ,business.industry ,Materials Science (cond-mat.mtrl-sci) ,General Chemistry ,Persistent photoconductivity ,021001 nanoscience & nanotechnology ,cond-mat.mtrl-sci ,0104 chemical sciences ,Semiconductor ,Chemical physics ,symbols ,lcsh:Q ,van der Waals force ,0210 nano-technology ,business - Abstract
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K., The optical and electronic properties of semiconducting transition metal dichalcogenides are strongly dependent on native defects within their crystal lattice. Here, the authors use transient spectroscopy to identify defect-related deep levels in the bandgap of MoS2, WS2 and their alloys.
- Published
- 2020
39. Spirituality, Dialogue, Conversion: The Itinerary of Fr Jean-Mohammed Abd-el-Jalil
- Author
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Agnes Wilkins
- Subjects
Deep level ,Philosophy ,Spirituality ,Islam ,Religious studies ,Christianity ,Spiritual crisis - Abstract
Jean-Mohammed Abd-el-Jalil united in himself on a very deep level two religions, Islam and Christianity, that in many ways are opposed to each other, especially on the doctrinal level. His conversion/life journey shows how he achieved this, at great cost to himself. Born in Morocco, in a family deeply committed to Islam, he himself eventually adopted a rather rigid, strict form called ‘Wahhabism’. A gifted student, he was given a government bursary to study in France with a view to taking up a responsible position in soon to be independent Morocco, but his life changed radically after a sudden conversion to Catholicism at Midnight Mass. Before he was ready for baptism he worked through some difficult doctrinal issues with a fellow convert, Paul Ali Mehmet Mulla-Zadé, who taught Islam in Rome. After his baptism Abd-el-Jalil entered the Franciscan Order in Paris where he remained for the rest of is life, apart from a brief crisis when he fled to Morocco, seemingly to return to Islam. He enjoyed a long academic career and wrote books to help Christians understand Islam. His final fifteen years were spent as a virtual hermit because of illness.
- Published
- 2020
- Full Text
- View/download PDF
40. The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures
- Author
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Łukasz Drewniak and S. Kochowski
- Subjects
010302 applied physics ,Materials science ,Deep level ,Constant phase element ,Phase (waves) ,02 engineering and technology ,Electron ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Molecular physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Dielectric spectroscopy ,0103 physical sciences ,Equivalent circuit ,ICTS ,Electrical and Electronic Engineering ,0210 nano-technology ,Constant (mathematics) - Abstract
The Au/Pd/Ti–SiO2-(n) GaAs properties have been analyzed via impedance spectroscopy (IS), as well as DLTS and ICTS, to identify the origin of electron processes responsible for existence of constant phase elements (CPE) in an equivalent circuits of that structure. We showed that CPEs connected in series with resistance represents the electron processes associated with deep levels in GaAs and/or interface states at SiO2-(n) GaAs interface, depending on the value of n of CPE parameter. CPE with n close to 1 characterize the electron processes associated with EL2 deep level, and CPE with n = 0.5–0.65 the complex electron processes associated with EL3 deep level and interface states together. We stated that constant phase elements in equivalent circuits of MIS-GaAs structures with large frequency dispersion of electrical characteristics can be the result of more than one electron process.
- Published
- 2020
- Full Text
- View/download PDF
41. The distribution, reconstruction and varied fates of topographical deixis in Trans-Himalayan (Sino-Tibetan)
- Author
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Mark W. Post
- Subjects
050101 languages & linguistics ,Linguistics and Language ,Deep level ,business.industry ,05 social sciences ,Distribution (economics) ,06 humanities and the arts ,Deixis ,060202 literary studies ,Variety (linguistics) ,Language and Linguistics ,Linguistics ,Geographic distribution ,Geography ,0602 languages and literature ,Montane ecology ,0501 psychology and cognitive sciences ,business - Abstract
Topographical deixis refers to a variety of spatial-environmental deixis, in which typically distal reference to entities is made in terms of a set of topographically-anchored referential planes: most often, upward, downward, or on the same level. This article reviews the genealogical and geographic distribution of topographical deixis in Trans-Himalayan (Sino-Tibetan) languages, reviews the conditions in which topographical deixis in Trans-Himalayan languages may be gained or lost, and concludes that (a) topographical deixis is overwhelmingly found in languages spoken in montane environments, and (b) topographical deixis most likely reconstructs to a deep level within Trans-Himalayan. The language spoken at that level – whose precise phylogenetic status cannot yet be specified – was overwhelmingly likely to have been spoken in a montane environment.
- Published
- 2020
- Full Text
- View/download PDF
42. New design of a linear double‐sided printed dipole array based on bat algorithm for interference suppression in the first sidelobe direction
- Author
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Truong Vu Bang Giang, Luong Xuan Truong, and Tran Minh Tuan
- Subjects
Physics ,Back reflector ,Deep level ,Dipole array ,Acoustics ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,020206 networking & telecommunications ,02 engineering and technology ,Antenna array ,Dipole ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,Excitation ,Bat algorithm - Abstract
This study proposes a design of a double-sided printed dipole (DSPD) antenna array with a low first sidelobe level (FSLL) for interference suppression. The proposed array consists of ten DSPD antennas based on the Rogers RO4003C substrate (ɛr = 3.55). The FSLL has been compressed by imposing a single null at the centre of the first sidelobe. The excitation power distribution of the array has been calculated by using the bat algorithm with the amplitude-only control technique and has been implemented by a series-fed network. A back reflector, which is based on an FR4 substrate (ɛr = 4.4), has been used to improve the maximum gain. The simulation results show that the FSLL can be reduced with a null deep level (NDL) of −40 dB in the E-plane at the frequency of 3.5 GHz, while the maximum gain of the array is around 17.7 dBi, and the bandwidth is 600 MHz (3.3–3.9 GHz) with −10 dB of S 11. A prototype of the proposed DSPD antenna array has been fabricated and measured. A good agreement can be achieved between simulation and measurement results.
- Published
- 2020
- Full Text
- View/download PDF
43. Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC
- Author
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Giovanni Alfieri, Andrei Mihaila, and Lukas Kranz
- Subjects
010302 applied physics ,Materials science ,Deep level ,010308 nuclear & particles physics ,business.industry ,Mechanical Engineering ,Doping ,Vanadium ,chemistry.chemical_element ,Condensed Matter Physics ,01 natural sciences ,Crystallographic defect ,chemistry ,Mechanics of Materials ,0103 physical sciences ,Electron beam processing ,Optoelectronics ,General Materials Science ,Current mode ,business ,Spectroscopy - Abstract
SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.
- Published
- 2020
- Full Text
- View/download PDF
44. Optimal use of mobile cooling units in a deep-level gold mine
- Author
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J. F. van Rensburg, H.J. van Staden, and H.J. Groenewald
- Subjects
lcsh:TN1-997 ,Gold mining ,Deep level ,business.industry ,Electricity cost savings ,Energy Engineering and Power Technology ,Environmental economics ,Mine cooling performance ,Geotechnical Engineering and Engineering Geology ,Geochemistry and Petrology ,Cooling Units ,Sustainability ,Environmental science ,Position (finance) ,Profitability index ,Optimisation ,Mineral potential ,Performance indicator ,business ,Mobile cooling units ,lcsh:Mining engineering. Metallurgy ,Spot cooling - Abstract
The South African gold mining sector remains a significant contributor to the country’s economy. Facing several challenges that hinder the realisation of South Africa’s full mineral potential, the sector’s sustainability and profitability can be enhanced through implementing operational improvement measures. Mobile cooling units (MCUs) were identified as a potential focus area for operational improvement. MCUs are used as tertiary or in-stope cooling in hot underground workings. In this paper, a method was presented to characterise the performance of existing MCUs based on three key performance indicators (KPIs), namely, the wet-bulb temperature ratio (WTR), efficiency and position. Optimisation strategies were then elected and implemented based on these KPIs. The implementation of this method in a South African gold mine attained a reduction in pumped water volumes, reduced operating costs through electricity cost savings and improvements in underground ventilation air temperatures.
- Published
- 2020
45. A Deep Level Tagger for Malayalam, a Morphologically Rich Language
- Author
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A. P. Ajees, Mary Idicula Sumam, K. J. Abrar, and M. Sreenathan
- Subjects
Word embedding ,Computer science ,Science ,02 engineering and technology ,computer.software_genre ,multi-layer perceptron ,Artificial Intelligence ,0202 electrical engineering, electronic engineering, information engineering ,malayalam ,support vector machine ,natural language processing ,Deep level ,business.industry ,68t50 ,020206 networking & telecommunications ,QA75.5-76.95 ,word embedding ,language.human_language ,Support vector machine ,Multilayer perceptron ,Electronic computers. Computer science ,Malayalam ,language ,ComputingMethodologies_DOCUMENTANDTEXTPROCESSING ,deep level tagger ,020201 artificial intelligence & image processing ,Artificial intelligence ,business ,computer ,Software ,Natural language processing ,Information Systems - Abstract
In recent years, there has been tremendous growth in the amount of natural language text through various sources. Computational analysis of this text has got considerable attention among the NLP researchers. Automatic analysis and representation of natural language text is a step by step procedure. Deep level tagging is one of such steps applied over the text. In this paper, we demonstrate a methodology for deep level tagging of Malayalam text. Deep level tagging is the process of assigning deeper level information to every noun and verb in the text along with normal POS tags. In this study, we move towards a direction that is not much explored in the case of Malayalam language. Malayalam is a morphologically rich and agglutinative language. The morphological features of the language are effectively utilized for the computational analysis of Malayalam text. The language level details required for the study are provided by Thunjath Ezhuthachan Malayalam University, Tirur.
- Published
- 2020
46. Stress assessment in deep-level stoping in Talnakh mines
- Author
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A. A. Andreev, D. A. Vasiliev, Norilsk Nickel’s Polar Branch, Norilsk, Russia, Norilsk Nickel, Moscow, Russia, V. P. Marysyuk, and G. V. Sabyanin
- Subjects
Stress assessment ,Mining engineering ,Deep level ,Geotechnical Engineering and Engineering Geology ,Geology ,Stoping - Published
- 2020
- Full Text
- View/download PDF
47. Safety of repeated use of deep-level openings in Norilsk mines
- Author
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I. A. Luchko, A. A. Stelmakhov, and M. S. Arzhatkina
- Subjects
010504 meteorology & atmospheric sciences ,Ecology ,Mining engineering ,Deep level ,Geochemistry and Petrology ,Environmental science ,Geology ,010501 environmental sciences ,Geotechnical Engineering and Engineering Geology ,01 natural sciences ,Industrial and Manufacturing Engineering ,0105 earth and related environmental sciences - Abstract
The article discusses safe repeated use of deep-level openings in Norilsk mine for vegetable production and herb cultivation in special facilities. Farming on the field in the north and east of Russia either is restricted by a short warm period suitable for vegetation, or is impossible due to climate, while the glasshouse industry bears losses because of the power cost and other expenses. At the actual depth of mining in the Talnakh ore cluster, the mine air temperature may reach 40 Celsius degrees and higher, which offers comfortable condition for the implementation of R&D projects in biotechnologies. One the other hand, the ore bodies in the cluster are rockburst-hazardous, which means high probability of dynamic events with deformation and destruction of underground excavations. It is necessary to undertake the elaborated studies into geodynamic safety to select and validate installation sites for biotechnology objects. It is suggested to select deep-level installation sites for the production of vegetable crops AVK-15 with regard to the geodynamic zoning of the Norilsk ore cluster. Deeplevel vegetation production will become safe as a result, and new eco-friendly and adaptable technologies will be developed for the year-round cultivation of fresh vegetables and green at the low material inputs and power consumption per unit product.
- Published
- 2020
- Full Text
- View/download PDF
48. Deep-level diversity and workgroup creativity: the role of creativity climate
- Author
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Vinit Ghosh and Nachiketa Tripathi
- Subjects
Deep level ,media_common.quotation_subject ,05 social sciences ,Applied psychology ,050109 social psychology ,Moderation ,Creativity ,General Business, Management and Accounting ,Diversity management ,0502 economics and business ,0501 psychology and cognitive sciences ,Quality (business) ,Workgroup ,Psychology ,Social identity theory ,050203 business & management ,Diversity (business) ,media_common - Abstract
PurposeThis paper aims to explore the effect of perceived “self-to-team” deep-level diversity on team’s creative output from a social identity lens’ view.Design/methodology/approachAn experimental study was designed (n= 30 in each experimental condition, namely, homogeneous, heterogeneous and mixed) and vignettes were used to manipulate the experimental conditions. Employees from four Indian organizations participated in the experimental study.FindingsResults indicated that deep-level homogeneous group perceived higher team creative output as compared to the deep-level heterogeneous group. Perceived team creativity climate was found to mediate the effect of team diversity on team’s creative output. Further, it was observed that the quality of perceived creativity climate (positive and negative) moderated the relationship between diversity and team’s creative output.Practical implicationsThe diversity–climate–creativity model presented in the paper may help managers to understand how “deep-level” group composition affects a group’s creative performance. The findings of this study may act as a platform for building effective diversity management policies.Originality/valueThe current research has contributed to the limited team diversity and creativity literature. Based on the experimental study, the paper has uniquely investigated team diversity and creativity link along with examining the role of a mediator (creativity climate) and moderator (quality climate) in the relationship. As the study was conducted in Indian settings, the findings were interpreted based on the typical Indian psycho-social characteristics.
- Published
- 2020
- Full Text
- View/download PDF
49. INFLUENCE OF ORGANIZATIONAL CULTURE ON CORPORATE BRAND
- Author
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N. A. Bashkina, N. V. Klym-Eremina, and V. V. Orlov
- Subjects
corporate brand ,communications ,Target audience ,Organizational culture ,Corporation ,HM401-1281 ,Resource (project management) ,0502 economics and business ,Production (economics) ,Sociology (General) ,image ,050207 economics ,Marketing ,HB71-74 ,corporate social responsibility ,brand capital ,050208 finance ,organizational culture ,Deep level ,05 social sciences ,branding ,Economics as a science ,Corporate branding ,Corporate social responsibility ,Business ,corporate culture - Abstract
Brand, being a significant intangible resource, requires special attention not only from marketers, but also from the management of the organization, as its formation affects various aspects of production and economic activity. The given review of the Russian and foreign points of view on interrelation of organizational culture of corporation and its brand, allows us to make a conclusion about necessity of further in-depth studying of this issue. The mutual influence of the organizational culture of the corporation and its brand at the deep level has been revealed and substantiated in the article. The study results of the influence of the organizational culture main components such as corporate culture, corporate social responsibility, on the corporation brand, – have been reflected. Special attention has been paid to the effective interaction with the media, which are a brand guide for the target audience.
- Published
- 2020
- Full Text
- View/download PDF
50. Development of Self-Funded Water Supply for People of Sidomulyo, Sragen Using Deep Well with Submersible Pump
- Author
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Wijianto Wijianto, Umar Hasan, and Agus Ulinuha
- Subjects
Deep level ,business.industry ,law ,Photovoltaic system ,Water source ,Environmental engineering ,Water supply ,Environmental science ,Water pipe ,Revenue ,business ,Submersible pump ,law.invention - Abstract
The availability of water is a problem for the people of Sidomulyo, Krikilan, Sragen at dry season. Having a higher altitude than other areas causes the water from the government water supply company difficult, reaching the area, particularly at the peak time. Some people using water from bore water also have the same problem of limited water. It is, therefore, necessary to bore the deep well for getting enough water to satisfy the people’s needs. The deep level of the well should be enough to assure not to absorb the water source of people’s well. In this program, the well with the deep of 81 m is bored, and PVC water pipes are placed inside the hole assuring only the deep bore water is taken out. This is aimed to avoid taking water from the low-level source, which may reduce the water going to the people’s well. For pumping purposes, the submersible electric pump is used. It is 3 hp, 2500-Watt pump with a capacity of 18 m3 per hour. From the 3-day pumping test, the capacity of well is very enough to provide water needs for the 34 families of Sidomulyo. High-water storage with the dimension of (2.4 x 2.4 x 2) m3 has been constructed with a height of 7.4 m to the tank base. The power source is currently from the electrical utility but is planned will be from Solar Photovoltaic. From a financial perspective, the revenue from the water bill will support community activities.
- Published
- 2020
- Full Text
- View/download PDF
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