187 results on '"Deki, Manato"'
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2. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
3. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
4. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy.
5. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
6. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
7. Morphological study of InGaN on GaN substrate by supersaturation
8. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
9. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
10. 15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
11. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
12. Substitutional diffusion of Mg into GaN from GaN/Mg mixture
13. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
14. Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors
15. Optical properties of neodymium ions in nanoscale regions of gallium nitride
16. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
17. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources
18. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
19. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions
20. “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
21. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
22. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
23. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
24. Experimental demonstration of GaN IMPATT diode at X-band
25. Enhanced photon extraction from praseodymium ions implanted with gallium nitride nanopillars
26. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
27. Optical properties of neodymium ions in nanoscale regions of gallium nitride: erratum
28. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
29. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs
30. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces
31. Photon emission enhancement of praseodymium ions implanted with GaN nanopillars
32. Luminescence Properties of Implanted Nd Ions into Submicron Regions of GaN Semiconductor
33. Photoluminescence Properties of Implanted Praseodymium into Gallium Nitride at Elevated Temperature
34. Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE
35. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
36. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
37. Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures
38. Impact of high-temperature implantation of Mg ions into GaN
39. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
40. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements
41. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
42. V-shaped dislocations in a GaN epitaxial layer on GaN substrate
43. Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride
44. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility.
45. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current
46. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
47. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
48. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates
49. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
50. Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride
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