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2. Manufacturing Yield Improvement for Advanced CMOS Technology Middle-of-Line Interconnect with Cobalt Metallization : YE: YieldEnhancement/Learning

3. Process Challenge in Analog Computing Hardware using Phase Change Memory (PCM)

5. Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology

8. Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices

9. Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format

10. Failure Analysis Challenges of Phase Change Memory Test Structures with Two Case Studies

13. Impact of Nanosecond Laser Anneal on PVD Ru Films

14. Perspectives on the Barrier to Resistance for Dolutegravir + Lamivudine, a Two-Drug Antiretroviral Therapy for HIV-1 Infection

15. A 14 nm Embedded STT-MRAM CMOS Technology

18. Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies

20. Transmission Electron Microscopy Sample Preparation By Design Based Recipe Writing in a DBFIB Part 2

21. Technology challenges and enablers to extend Cu metallization to beyond 7 nm node

23. Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nm

24. Mechanisms of Electromigration Damage in Cu Interconnects

27. Fully Aligned Via Integration for beyond 7 nm

28. Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL

29. Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node

31. Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node

32. Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines

33. Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization.

34. A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

35. FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

36. FINFET technology featuring high mobility SiGe channel for 10nm and beyond

39. Ti and NiPt/Ti liner silicide contacts for advanced technologies

40. Interface preservation during Ge-rich source/drain contact formation

41. Population and ultra‐deep sequencing for tropism determination are correlated with Trofile ES: genotypic re‐analysis of the A4001078 maraviroc study

42. Short‐term variation of HIV tropism readouts in the absence of CCR5 antagonists

43. Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

44. Electrodeposited Cu Film Morphology on Thin PVD Cu Seed Layers

45. ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08mm2 RAM Cell

47. UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below

49. Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

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