1. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells.
- Author
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Bullock, J., Cuevas, A., Yan, D., Demaurex, B., Hessler-Wyser, A., and De Wolf, S.
- Subjects
SILICON ,ELECTRIC insulators & insulation ,SEMICONDUCTORS ,SOLAR cells ,TEMPERATURE - Abstract
Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metalinsulator- semiconductor (MIS) structures. Lightly diffused n
+ and p+ surfaces are passivated with SiO2 /a-Si:H and Al2 O3 /a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+ ) contacts, with SiO2 thicknesses of ~1.55 nm, achieve the best carrierselectivity producing a contact resistivity qc of ~3 mΩ cm2 and a recombination current density J0c of ~40 fA/cm2 . These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+ ) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity. [ABSTRACT FROM AUTHOR]- Published
- 2014
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