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Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Aluminum oxide system. Here, we observe a double sign change in the anisotropy and about threefold variation in interfacial chiral interaction, influenced not only by the oxidation, but also by the metallic Al thickness. Contrary to previous assumptions about negligible spin-orbit effects at light metal interfaces, we not only observe strong PMA with fully oxidized Al, decreasing and turning negative (in-plane) with less oxygen at the Co|Al interface, we also observe that the magnetic anisotropy reverts to positive (out-of-plane) values at fully metallic Co|Al interface. These findings suggest modification in Co d band via Co|Al orbital hybridization, an effect supported by X-ray absorption spectroscopy and ab initio theory calculations, highlighting the key impact of strain on interfacial mechanisms at fully metallic Co|Al interface., Comment: 6 pages, 5 figures

The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in pristine van der Waals heterostructures remains challenging. In this study, we investigate the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures. Our work demonstrates a method to modulate unidirectional exchange anisotropy, achieving an unprecedented nearly 1000% variation through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, magneto-transport measurements reveal a huge 170 mT exchange bias at 5 K, the largest observed in pristine van der Waals antiferromagnet-ferromagnet interfaces. This substantial magnitude of the exchange bias is linked to an anomalous weak ferromagnetic ordering in MnPS3 below 40 K. On the other hand, the tunability of exchange bias during thermal cycling is ascribed to the modified arrangement of interfacial atoms and changes in the vdW gap during field cooling. Our findings highlight a robust and easily adjustable exchange bias in van der Waals antiferromagnetic/ferromagnetic heterostructures, presenting a straightforward approach to enhance other interface related spintronic phenomena for practical applications.

Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization. The increase of Tb thickness in the multilayers allows to reduce the total magnetic moment and increases the spin-orbit torques allowing to reach velocities up to 400 m.s-1 for skyrmions with diameters of about 160 nm. We demonstrate that due to reduced skyrmion Hall effect, combined with the edge repulsion of the magnetic track making the skyrmions moving along the track without any transverse deflection. Further, by comparing the field-induced domain wall motion and current-induced skyrmion motion, we demonstrate that the skyrmions at the largest current densities present all the characteristics of a dynamical flow regime., Comment: 14 pages, 4 figures

Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and non-monotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a 'pre-set field' implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.

For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT switching of perpendicularly magnetized layers of the thulium iron garnet (Tm_{3}Fe_{5}O_{12}) magnetic insulator. The polarity of the switching loops, clockwise (CW) or counter-clockwise (CCW), is determined by the direction of the initial current pulses, in contrast with field-assisted switchings in which this polarity is controlled by the direction of the field. After an independent determination of Dzyaloshinskii-Moriya interaction (DMI), we relate the field free switching to the interplay of SOT and DMI and the polarity of the loops to the imprint of a N\'eel domain wall induced by the first pulse, in agreement with Kerr imaging. Our observation and interpretation of field-free electrical switching of a magnetic insulator is an important milestone for future low power spintronic devices., Comment: 11 pages, 4 figures

The role of the crystal lattice, temperature and magnetic field for the spin structure formation in the 2D van der Waals magnet Fe5GeTe2 is a key open question. Using Lorentz transmission electron microscopy, we experimentally observe topological spin structures up to room temperature in the metastable pre-cooling and stable post-cooling phase of Fe5GeTe2. Over wide temperature and field ranges, skyrmionic magnetic bubbles form without preferred chirality, which is indicative of a centrosymmetric crystal structure. In the pre-cooling phase, these bubbles are observable even without the application of an external field, while in the post-cooling phase, a transformation from bubble domains to stripe domains is seen. To understand the magnetic order in Fe5GeTe2 we compare macroscopic magnetometry characterization results with microscopic density functional theory calculation. Our results show that even up to room temperature, topological spin structures can be stabilized in centrosymmetric van der Waals magnets., Comment: 25 pages, 10 figures

The recent emergence of magnetic van der Waals materials allows for the investigation of current induced magnetization manipulation in two dimensional materials. Uniquely, Fe3GeTe2 has a crystalline structure that allows for the presence of bulk spin-orbit torques (SOTs), that we quantify in a Fe3GeTe2 flake. From the symmetry of the measured torques, we identify the current induced effective fields using harmonic analysis and find dominant bulk SOTs, which arise from the symmetry in the crystal structure. Our results show that Fe3GeTe2 uniquely can exhibit bulk SOTs in addition to the conventional interfacial SOTs enabling magnetization manipulation even in thick single layers without the need for complex multilayer engineering., Comment: 19 pages 4 figures

Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists alongside Ni-poor and Ni-rich nanoprecipitates within a matrix of tetrataenite, the uniaxial, chemically ordered form of FeNi. The ferromagnetic nature of the nanoprecipitates combined with the antiferromagnetic character of the FeNi nanophases give rise to a complex magnetic state that evolves dramatically with temperature. These observations extend and possibly alter our understanding of celestial metallurgy, provide new knowledge concerning the archetypal Fe-Ni phase diagram and supply new information for the development of new types of sustainable, technologically critical high-energy magnets., Comment: 10 pages, 5 figures

The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.