82 results on '"Dentel, D."'
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2. Grafting process of ethyltrimethoxysilane and polyphosphoric acid on calcium carbonate surface
3. Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
4. Influence of molecular hydrogen on Ge island nucleation on Si
5. Epitaxy relationships between Ge-islands and SiC(0 0 0 1)
6. Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)
7. Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces
8. A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations
9. Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption
10. Determination of interface state density of PtSi/strained-Si1−xGex/Si Schottky diodes
11. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4).
12. Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001).
13. Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(0 0 1): a RHEED study
14. Germanene on Al(111): Interface Electronic States and Charge Transfer
15. Raman, AFM, and TEM profiling of QD multilayer structures
16. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4x4)
17. Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H-SiC(0001)
18. Strain induced morphology manipulations of Si and Ge-based heterostructures on Si(001) surfaces
19. Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions
20. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer
21. Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface
22. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4)
23. Resonant Raman scattering by acoustic phonons in self-assembled quantum-dot multilayers: From a few layers to superlattices
24. Structural and optical properties of GE islands in an industrial chemical vapor deposition reactor
25. Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 $\times $3)
26. Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
27. Influence of the mesa size on Ge island electroluminescence properties
28. AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping
29. Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(001): a RHEED study
30. Ge LATERAL SEGREGATION AS A DOMINANT ALLOYING MECHANISM DURING LOW KINETIC Si CAPPING OF STRAINED Si1-xGex HUT ISLANDS
31. Role of hydrogen during Si capping of strained Ge or Si1−xGex hut clusters
32. 6H-SiC{0001} X-ray photoelectron diffraction characterization used for polarity determination
33. Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands
34. Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study
35. Reflection high-energy electron diffraction intensity oscillations during Si growth on Ge(001) by solid source/molecular beam epitaxy
36. The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy
37. HRTEM study of strained Si/Ge multilayers
38. Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes
39. Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon
40. Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)
41. Ge Lateral Segregation as a Dominant Alloying Mechanism during Low Kinetic Si Capping of Strained Si[sub 1-x]Ge[sub x] Hut Islands.
42. Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes.
43. Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si~1~-xGe~x morphologies: a RHEED and TEM study
44. Role of hydrogen during Si capping of strained Ge or Si~1~-~xGe~x hut clusters
45. Role of hydrogen during Si capping of strained Ge or Si 1− xGe x hut clusters
46. Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si 1− xGe x morphologies: a RHEED and TEM study
47. Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si[sub 1-x]Ge[sub x] hut islands.
48. Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption
49. Deposition of Nanosized Amino Acid Functionalized Bismuth Oxido Clusters on Gold Surfaces.
50. Tip-Induced Switch of Germanene Atomic Structure.
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