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39 results on '"Descouts, B."'

2. Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices

Author

Amarger, V., Dubon- Chevallier, C., Gao, Y., and Descouts, B.

Subjects
Bipolar transistors -- Research, Physics
Abstract

Interactions between implanted Mg and base p-type dopants in heterojunction bipolar transistor devices were investigated. The results showed that Mg diffusion behavior was dependent on the type of base dopant. The hole concentration profile in the transistor devices was also depenednt on the dopant type. The relatively small amount of carbon diffusion enhanced by Mg implantation indicated that it was a very suitable material for the fabrication of small dimension implanted devices.

Published
1992

3. Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

Author

Vieu, C., Schneider, M., Benassayag, G., Planel, R., Birotheau, L., Marzin, J.Y., and Descouts, B.

Subjects
Quantum wells -- Research, Ion implantation -- Research, Annealing -- Research, Physics
Abstract

A study was conducted on the structural characteristics of GaAs/GaAlAs quantum wires. These wires are capable of promoting strong mixing rates after high-dose implantation. Large lateral modulations of the effective band gap and small interdiffusion lengths were observed. Further observation also showed the presence of one-dimensional quantization energies ranging from 11 to 20 meV in the structures. The study shows that the GaAs/GaAlAs quantum well can be effectively used to produce efficient quantum-well wires.

Published
1992

4. Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells

Author

Vieu, C., Schneider, M., Launois, H., and Descouts, B.

Subjects
Gallium arsenide -- Research, Aluminum alloys -- Research, Quantum wells -- Research, Annealing -- Research, Physics
Abstract

A study was conducted on damage generation and its effects on GaAs/(Ga,Al)As quantum wells. Point defects were found to cause the disordering of layer structures during annealing at low doses while cascade mixing produces the intermixing at high doses. Strong segregation of the defects was observed in GaAs layers. AlAs was also found to be resistant to amorphization and delayed the amorphization process in GaAs quantum-well layers. The study showed AlAs'potential for device applications due to its effectivity in preventing GaAs quantum well damage and controlling defects during annealing.

Published
1992

6. Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantation.

Author

Vieu, C., Schneider, M., Mailly, D., Planel, R., Launois, H., Marzin, J. Y., and Descouts, B.

Subjects
GALLIUM arsenide, NANOWIRES, ALUMINUM, OPTICS
Abstract

Presents a study which investigated the optical characteristics of selectively intermixed gallium arsenide/gallium aluminum arsenide quantum wires by gallium[sup+] masked implantation. Experimental details; Results and discussion; Conclusion.

Published
1991
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7. Mixing of GaAs/(Ga,Al)As interfaces by Ga+ implantation.

Author

Vieu, C., Schneider, M., Planel, R., Launois, H., Descouts, B., and Gao, Y.

Subjects
GALLIUM arsenide, ALUMINUM, INTERFACES (Physical sciences), ANNEALING of metals
Abstract

Presents a study which investigated the intermixing of gallium arsenide/(gallium, aluminum)arsenide heterointerfaces by Ga[sup] implantation and annealing. Experimental details; Results and discussion; Conclusions.

Published
1991
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8. Temperature influence on the damage induced in Si+-implanted InP.

Author

Zheng, P., Ruault, M.-O., Gasgnier, M., Descouts, B., and Krauz, P.

Subjects
SILICON, TEMPERATURE, TRANSMISSION electron microscopy
Abstract

Presents a study that investigated the influence of temperature on the damage induced in silicon-implanted InP through in situ transmission electron microscopy analysis. Experimental details; Results; Discussion.

Published
1991
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9. In situ thermal annealing of InP amorphous layer induced by Si+ implantation.

Author

Zheng, P., Ruault, M.-O., Denanot, M. F., Descouts, B., and Krauz, P.

Subjects
ANNEALING of metals, INDIUM phosphide, ION implantation, EPITAXY, CRYSTALLIZATION
Abstract

Investigates recrystallization during thermal annealing of indium phosphide (InP). Factor affecting the electrical properties of an ion implanted material; Aftereffects of InP epitaxial regrowth; Implication of the presence of faulted loops among perfect dislocation loops.

Published
1991
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10. Thermal management of electronic devices by composite materials integrated in silicon

Author

Ollier, Emmanuel, Soupremanien, U., Remondière, V., Dijon, J., Le Poche, H., Lefevre, F., Lips, S., Kinkelin, K., Rolland, N., Rolland, Pa., Zegaoui, M., Lhostis, S., Ancey, P., Descouts, B., Kaplan, Y., Laboratoire des Composants pour la Récupération d'Énergies (LCRE), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CEA, Laboratoire des Composites Thermostructuraux (LCTS), Université de Bordeaux (UB)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Snecma-SAFRAN group-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Snecma-SAFRAN group-Centre National de la Recherche Scientifique (CNRS), Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
carbon nanotubes, phase change materials, Interposer, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], thermal management
Abstract

11 pages; International audience; As the power of electronic systems powers is increasing, thermal fluxes are getting higher, up to more than 100W/cm2 in more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. Most of the prior research has been focused on active liquid cooling and on reducing hot spots by the implementation of thermal interface materials (TIMs) and spreading solutions. The approach presented here is based on the implementation in silicon of nanocomposite structures including carbon nanotubes (CNTs) and phase change materials (PCMs).The simulation model presented here shows how the composite CNTs/PCM structure efficiently reduces the temperature increase at the silicon surface compared to the implementation of PCM only or thicker silicon. A fabrication process flow is presented with a special focus on the assembly of silicon top and bottom parts with CNTs. Process conditions are explored to insure mechanical adhesion and thermal contact quality. This thermal interposer concept provides a new solution for thermal management and reliability improvement of devices. It is of great interest for electronic and optical devices, MEMS and 3D integration.

Published
2013

12. Uniform p-type doping profiles in Mg+24-implanted, rapidly annealed GaAs/AlGaAs heterostructures.

Author

Descouts, B., Duhamel, N., Daoud-Ketata, K., Krauz, P., and Godefroy, S.

Subjects
*SEMICONDUCTOR doping, *GALLIUM arsenide, *THERMOCOUPLES
Abstract

Discusses the use of a flat profile with p-type doping level up to the surface in gallium arsenide/gallium-aluminum-arsenic heterostructures. Use of a chromel-alumel thermocouple wires; Advantage of rapid thermal anneal; Range of implantation energies used.

Published
1986
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13. High resolution electron microscopy study of damage created in Si-implanted InP

Author

Zheng, P., Ruault, M.O., Pitaval, M., Descouts, B., Krauz, P., Gasgnier, M., Crestou, J., Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)

Published
1991

14. In situ defect studies on Si$^+$ implanted InP

Author

Zheng, P., Ruault, M.O., Kaitasov, O., Crestou, J., Descouts, B., Krauz, P., Duhamel, N., Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Published
1990

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