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494 results on '"Di, Zengfeng"'

3. Two-dimensional materials for future information technology: status and prospects

Author

Qiu, Hao, Yu, Zhihao, Zhao, Tiange, Zhang, Qi, Xu, Mingsheng, Li, Peifeng, Li, Taotao, Bao, Wenzhong, Chai, Yang, Chen, Shula, Chen, Yiqi, Cheng, Hui-Ming, Dai, Daoxin, Di, Zengfeng, Dong, Zhuo, Duan, Xidong, Feng, Yuhan, Fu, Yu, Guo, Jingshu, Guo, Pengwen, Hao, Yue, He, Jun, He, Xiao, Hu, Jingyi, Hu, Weida, Hu, Zehua, Huang, Xinyue, Huang, Ziyang, Imran, Ali, Kong, Ziqiang, Li, Jia, Li, Qian, Li, Weisheng, Liao, Lei, Liu, Bilu, Liu, Can, Liu, Chunsen, Liu, Guanyu, Liu, Kaihui, Liu, Liwei, Liu, Sheng, Liu, Yuan, Lu, Donglin, Ma, Likuan, Miao, Feng, Ni, Zhenhua, Ning, Jing, Pan, Anlian, Ren, Tian-Ling, Shu, Haowen, Sun, Litao, Sun, Yue, Tao, Quanyang, Tian, Zi-Ao, Wang, Dong, Wang, Hao, Wang, Haomin, Wang, Jialong, Wang, Junyong, Wang, Wenhui, Wang, Xingjun, Wang, Yeliang, Wang, Yuwei, Wang, Zhenyu, Wen, Yao, Wu, Haidi, Wu, Hongzhao, Wu, Jiangbin, Wu, Yanqing, Xia, Longfei, Xiang, Baixu, Xing, Luwen, Xiong, Qihua, Xiong, Xiong, Xu, Jeffrey, Xu, Tao, Xu, Yang, Yang, Liu, Yang, Yi, Yang, Yuekun, Ye, Lei, Ye, Yu, Yu, Bin, Yu, Ting, Zeng, Hui, Zhang, Guangyu, Zhang, Hongyun, Zhang, Jincheng, Zhang, Kai, Zhang, Tao, Zhang, Xinbo, Zhang, Yanfeng, Zhao, Chunsong, Zhao, Yuda, Zheng, Ting, Zhou, Peng, Zhou, Shuyun, Zhu, Yuxuan, Yang, Deren, Shi, Yi, Wang, Han, and Wang, Xinran

Published
2024
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4. Robust Quantum Griffiths Singularity at above 1.5 Kelvin in Nitride Thin Films

Author

Wang, Xiaoni, Wang, Lijie, Liu, Yixin, Chen, Fan, Gao, Wanpeng, Wu, Yu, Xu, Zulei, Peng, Wei, Wang, Zhen, Di, Zengfeng, Li, Wei, Mu, Gang, and Lin, Zhirong

Subjects
Condensed Matter - Superconductivity
Abstract

Quantum Griffiths singularity (QGS), which is closely correlated with the quenched disorder, is characterized by the divergence of the dynamical critical exponent and the presence of activated scaling behavior. Typically such a quantum phenomenon is rather rare and only observed in extremely low temperatures. Here we report the experimental observation of a robust QGS in nitride thin films, NbN, which survives in a rather high temperature range. The electrical transport propertied were measured under the magnetic field up to 12 T. The field induced superconductor-metal transitions were observed with the continuously changed transition points with the decrease of temperature. The dynamical critical exponent based on the conventional power-law scaling reveals a divergent trend when approaching the the low temperature limit. Moreover, the temperature and field dependence of sheet resistance can be described by the activated scaling analysis in the temperature region up to 1.6 K $\leq T \leq$ 4.0 K. We argue that the robustness of QGS in the present system originates from the Pauli paramagnetic effect due to the strong coupling between the magnetic field and the spin degree of freedom., Comment: 6 pages, 4 figures

Published
2022
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5. Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge

Author

Dai, Liyan, Zhao, Jinyan, Li, Jingrui, Chen, Bohan, Zhai, Shijie, Xue, Zhongying, Di, Zengfeng, Feng, Boyuan, Sun, Yanxiao, Luo, Yunyun, Ma, Ming, Zhang, Jie, Ding, Sunan, Zhao, Libo, Jiang, Zhuangde, Luo, Wenbo, Quan, Yi, Schwarzkopf, Jutta, Schroeder, Thomas, Ye, Zuo-Guang, Xie, Ya-Hong, Ren, Wei, and Niu, Gang

Subjects
Engineering, Materials Engineering, Physical Sciences, Condensed Matter Physics
Abstract

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Published
2022

6. Abnormal Staebler-Wronski effect of amorphous silicon

Author

Liu, Wenzhu, Shi, Jianhua, Zhang, Liping, Han, Anjun, Huang, Shenglei, Li, Xiaodong, Peng, Jun, Yang, Yuhao, Gao, Yajun, Yu, Jian, Jiang, Kai, Yang, Xinbo, Li, Zhenfei, Du, Junlin, Song, Xin, Yu, Youlin, Ma, Zhixin, Yao, Yubo, Zhang, Haichuan, Xu, Lujia, Kang, Jingxuan, Xie, Yi, Liu, Hanyuan, Meng, Fanying, Laquai, Frédéric, Di, Zengfeng, and Liu, Zhengxin

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

Great achievements in last five years, such as record-efficient amorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edge perovskite/SHJ tandem solar cells, place hydrogenated amorphous silicon (a-Si:H) at the forefront of emerging photovoltaics. Due to the extremely low doping efficiency of trivalent boron (B) in amorphous tetravalent silicon, light harvesting of aforementioned devices are limited by their fill factors (FF), which is a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H for minimizing the FF losses. Here we report intensive light soaking can efficiently boost the dark conductance of B-doped a-Si:H "thin" films, which is an abnormal Staebler-Wronski effect. By implementing this abnormal effect to SHJ solar cells, we achieve a certificated power conversion efficiency (PCE) of 25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer. This PCE is one of the highest reported values for total-area "top/rear" contact silicon solar cells. The FF reaches 98.30 per cent of its Shockley-Queisser limit., Comment: 34 pages, 4 figures in main context,11 figures in supplementary materials

Published
2021

7. Enhancement of the superconductivity and quantum metallic state in the thin film of superconducting Kagome metal KV$_3$Sb$_5$

Author

Wang, Teng, Yu, Aobo, Zhang, Han, Liu, Yixin, Li, Wei, Peng, Wei, Di, Zengfeng, Jiang, Da, and Mu, Gang

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Materials Science
Abstract

Recently V-based Kagome metal attracted intense attention due to the emergence of superconductivity in the low temperature. Here we report the fabrication and physical investigations of the high quality single-crystalline thin films of the Kagome metal KV$_3$Sb$_5$. For the sample with the thickness of about 15 nm, the temperature dependent resistance reveals a Berezinskii-Kosterlitz-Thouless (BKT) type behavior, indicating the presence of two-dimensional superconductivity. Compared with the bulk sample, the onset transition temperature $T^{onset}_{c}$ and the out-of-plane upper critical field $H_{c2}$ are enhanced by 15\% and more than 10 times respectively. Moreover, the zero-resistance state is destroyed by a magnetic field as low as 50 Oe. Meanwhile, the temperature-independent resistance is observed in a wide field region, which is the hallmark of quantum metallic state. Our results provide evidences for the existence of unconventional superconductivity in this material., Comment: 5 pages, 4 figures

Published
2021
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8. Flexible solar cells based on foldable silicon wafers with blunted edges

Author

Liu, Wenzhu, Liu, Yujing, Yang, Ziqiang, Xu, Changqing, Li, Xiaodong, Huang, Shenglei, Shi, Jianhua, Du, Junling, Han, Anjun, Yang, Yuhao, Xu, Guoning, Yu, Jian, Ling, Jiajia, Peng, Jun, Yu, Liping, Ding, Bin, Gao, Yuan, Jiang, Kai, Li, Zhenfei, Yang, Yanchu, Li, Zhaojie, Lan, Shihu, Fu, Haoxin, Fan, Bin, Fu, Yanyan, He, Wei, Li, Fengrong, Song, Xin, Zhou, Yinuo, Shi, Qiang, Wang, Guangyuan, Guo, Lan, Kang, Jingxuan, Yang, Xinbo, Li, Dongdong, Wang, Zhechao, Li, Jie, Thoroddsen, Sigurdur, Cai, Rong, Wei, Fuhai, Xing, Guoqiang, Xie, Yi, Liu, Xiaochun, Zhang, Liping, Meng, Fanying, Di, Zengfeng, and Liu, Zhengxin

Published
2023
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9. Observation of Two-dimensional Superconductivity in an Ultrathin Iron-Arsenic Superconductor

Author

Zhang, Chi, Hu, Tao, Wang, Teng, Wu, Yufeng, Yu, Aobo, Chu, Jianan, Zhang, Han, Xiao, Hong, Peng, Wei, Di, Zengfeng, Qiao, Shan, and Mu, Gang

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Materials Science
Abstract

Two-dimensional (2D) superconductors supply important platforms for exploring new quantum physics and high-$T_c$ superconductivity. The intrinsic superconducting properties in the 2D iron-arsenic superconductors are still unknown owing to the difficulties in the preparation of ultrathin samples. Here we report the fabrication and physical investigations of the high quality single-crystalline ultrathin films of the iron-arsenic superconductor KCa$_2$Fe$_4$As$_4$F$_2$. For the sample with the thickness of 2.6$\sim$5 nm (1$\sim$2 unit cells), a sharp superconducting transition at around 30 K (onset point) is observed. Compare with the bulk material, the ultrathin sample reveals a relatively lower $T_c$, wider transition width, and broader flux liquid region under the in-plane field. Moreover, the angle dependent upper critical field follows the Tinkham model, demonstrating the two-dimensional superconductivity in ultrathin KCa$_2$Fe$_4$As$_4$F$_2$., Comment: 5 pages, 4 figures

Published
2020
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11. Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

Author

Liu, Wenzhu, Shi, Jianhua, Zhang, Liping, Han, Anjun, Huang, Shenglei, Li, Xiaodong, Peng, Jun, Yang, Yuhao, Gao, Yajun, Yu, Jian, Jiang, Kai, Yang, Xinbo, Li, Zhenfei, Zhao, Wenjie, Du, Junlin, Song, Xin, Yin, Jun, Wang, Jie, Yu, Youlin, Shi, Qiang, Ma, Zhixin, Zhang, Haichuan, Ling, Jiajia, Xu, Lujia, Kang, Jingxuan, Xu, Fuzong, Liu, Jiang, Liu, Hanyuan, Xie, Yi, Meng, Fanying, De Wolf, Stefaan, Laquai, Frédéric, Di, Zengfeng, and Liu, Zhengxin

Published
2022
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14. The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Author

Zhu, Zhongyunshen, Song, Yuxin, Zhang, Zhenpu, Sun, Hao, Han, Yi, Li, Yaoyao, Zhang, Liyao, Xue, Zhongying, Di, Zengfeng, and Wang, Shumin

Subjects
Physics - Applied Physics
Abstract

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Three growth orientations were observed on Ge (110) by the VSS growth at 220 {\deg}C, differing from only one growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained via analyzing the mechanism of the two growth modes., Comment: 11 pages, 5 figures, article

Published
2017

24. Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning

Author

Chen, Xinyu, Xie, Yufeng, Sheng, Yaochen, Tang, Hongwei, Wang, Zeming, Wang, Yu, Wang, Yin, Liao, Fuyou, Ma, Jingyi, Guo, Xiaojiao, Tong, Ling, Liu, Hanqi, Liu, Hao, Wu, Tianxiang, Cao, Jiaxin, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Deng, Jianan, Riaud, Antoine, Xu, Zihan, Wu, Chenjian, Xing, Shiwei, Lu, Ye, Ma, Shunli, Sun, Zhengzong, Xue, Zhongyin, Di, Zengfeng, Gong, Xiao, Zhang, David Wei, Zhou, Peng, Wan, Jing, and Bao, Wenzhong

Published
2021
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28. Graphene‐Based Silicon Photonic Devices for Optical Interconnects.

Author

Wang, Zheng, Cai, Yan, Jiang, Haitao, Tian, Ziao, and Di, Zengfeng

Subjects
OPTICAL interconnects, OPTICAL devices, DATA transmission systems, COMPUTER network traffic, WAFER level packaging, PLASMA diffusion, PHASE modulation
Abstract

The exponential growth of global data traffic is driven by the unprecedented digitalization of the world. To meet the demands of next‐generation high‐capacity data communication systems, innovative solutions are required. Silicon photonics has gained significant attention due to its ability to integrate multiple core functions of optical interconnects into small‐scale chips, offering cost‐effective and scalable manufacturing capabilities. By leveraging silicon photonics, it becomes possible to address the challenge of scaling system complexity while reducing size, cost, and energy consumption. Despite its advantages, silicon has inherent limitations that restrict its application range, such as the weak plasma dispersion effect and relatively large bandgap. Recently, graphene has emerged as a promising solution for traditional silicon photonics because of its exceptional electrical and optical properties. For instance, graphene on a silicon chip enables nearly pure phase modulation and ultrafast photodetection beyond 500 GHz. Moreover, the demonstrated compatibility of graphene with wafer‐level integration paves the way for mass production of graphene‐based silicon photonic devices, offering improved yield, scalability, and cost‐effectiveness. In this work, a comprehensive review is provided, focusing on graphene‐based silicon photonic devices and their applications in optical interconnects, aiming to explore the potential of graphene in advancing silicon photonic technology. [ABSTRACT FROM AUTHOR]

Published
2024
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29. Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics.

Author

Zeng, Daobing, Ding, Rongxiang, Liu, Guanyu, Lu, Huihui, Zhang, Miao, Xue, Zhongying, Tian, Ziao, and Di, Zengfeng

Subjects
ELECTRONIC systems, INTEGRATED circuits, HETEROSTRUCTURES
Abstract

Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems. [ABSTRACT FROM AUTHOR]

Published
2024
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37. Robust quantum Griffiths singularity above 1.5 K in nitride thin films

Author

Wang, Xiaoni, primary, Wang, Lijie, additional, Liu, Yixin, additional, Chen, Fan, additional, Gao, Wanpeng, additional, Wu, Yu, additional, Xu, Zulei, additional, Peng, Wei, additional, Wang, Zhen, additional, Di, Zengfeng, additional, Li, Wei, additional, Mu, Gang, additional, and Lin, Zhirong, additional

Published
2023
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45. 2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics (Adv. Mater. 48/2022)

Author

Chen, Yulong, primary, Tian, Ziao, additional, Wang, Xiang, additional, Ran, Nian, additional, Wang, Chen, additional, Cui, Anyang, additional, Lu, Huihui, additional, Zhang, Miao, additional, Xue, Zhongying, additional, Mei, Yongfeng, additional, Chu, Paul K., additional, Liu, Jianjun, additional, Hu, Zhigao, additional, and Di, Zengfeng, additional

Published
2022
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50. Rolling origami of vanadium dioxide nanomembranes for enhanced multi-level solar modulation

Author

Li, Xing, primary, Cao, Cuicui, additional, Liu, Chang, additional, He, Wenhao, additional, Wu, Kaibo, additional, Wang, Yang, additional, Xu, Borui, additional, Tian, Ziao, additional, Song, Enming, additional, Cui, Jizhai, additional, Huang, Gaoshan, additional, Zheng, Changlin, additional, Di, Zengfeng, additional, Cao, Xun, additional, and Mei, Yongfeng, additional

Published
2022
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