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YBa2Cu3O7-x (YBCO) films with embedded BaZrO3 and BaTiO3 nanoparticles were fabricated by metalorganic deposition using trifluoroacetates (TFA-MOD). Both X-ray diffraction and transmission electron microscopy revealed that these BaZrO3 and BaTiO3 nanoparticles had random orientations and were distributed stochastically in the YBCO matrix. The unique combined microstructure enhances the critical current density (Jc) of the BaZrO3/BaTiO3 doped-YBCO films, while keeping the critical transition temperature (Tc) close to that in the pure YBCO films. These results indicate that BaZrO3 and BaTiO3 nanoparticles provide strong flux pinning in YBCO films. [ABSTRACT FROM AUTHOR]

YBa2Cu3O7 − x (YBCO) films with co-doping BaTiO3 (BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates (TFA-MOD). The properties of the BTO/Y2O3 co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction (XRD), Raman spectra, and scanning electron microscope (SEM). The optimized content of yttrium excess in the BTO/Y2O3 co-doped YBCO films is 10 mol.%, and the critical current density is as high as ∼17 mA/cm2 (self-field, 65 K) by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density (JC) not only at the self-magnetic field, but also in the applied magnetic field. [ABSTRACT FROM AUTHOR]

We report the thickness dependence of critical current density (Jc) in YBa2Cu3O7−x (YBCO) films with BaZrO3 (BZO) and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates (TFA-MOD). Comparing with pure YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores. [ABSTRACT FROM AUTHOR]

In this study, BaTiO3 (BTO)-doped YBCO films are prepared on LaAlO3 (100) single-crystal substrates by metal—organic decomposition (MOD) using trifluoroacetate (TFA) precursor solutions. The critical current density (Jc) of BTO/YBCO film is as high as 10 MA/cm2 (77 K, 0 T). The BTO peak is found in the X-ray diffraction (XRD) pattern of a final YBCO superconductivity film. Moreover, a comprehensive study of the precursor evolution is conducted mainly by X-ray analysis and μ-Raman spectroscopy. It is found that the TFA begins to decompose at the beginning of the thermal process, and then further decomposes as temperature increases, and at 700 °C BTO nanoparticles begin to appear. It suggests that the YBCO film embedded with BTO nanoparticles, whose critical current density (Jc) is enhanced, is successfully prepared by an easily scalable chemical solution deposition technique. [ABSTRACT FROM AUTHOR]

Abstract: Hydrogen isotope permeation barriers (HIPB) have great potential applications in the fields of hydrogen energy and thermonuclear fusion energy. Here, we report the stability of Y2O3 HIPB in gaseous hydrogen at high temperatures including the structures, mechanical properties and electrical properties. With increasing hydrogen treatment time at 700 °C, the high-index diffractions of Y2O3 became weak gradually whereas the (400) diffraction was strengthened. The color of the Y2O3 HIPB changed from brown to gray. The bonding strength decreased by 61% with increasing hydrogen treatment time, and finally remained unchanged. Meanwhile, the electrical resistivity of the Y2O3 HIPB decreased from 8.2 × 109 Ω cm by over two orders of magnitude and then tended to be constant. The oxygen loss as well as hydrogen incorporation was proposed to be responsible for these modifications and indications of the present work for preparation of HIPB with high reliability were discussed. [Copyright &y& Elsevier]

Thermoelectric generators (TEGs) are environmentally friendly energy harvesting technologies that hold great promise in the field of self-powered electronics and sensing. However, the current development of thermoelectric (TE) devices has largely lagged behind the development of thermoelectric materials, especially in the preparation of thermoelectric components with customizable shapes and excellent properties, which largely limits their practical applications. These issues can be effectively addressed by using 3D printing technology. Here, we print multiple p-type thermoelectric legs (pins) consecutively with this simple technique, and the printed TEGs have excellent thermal potential (288 μV K -1 at room temperature) and excellent temperature response properties, which exhibited an output voltage of 127.94 mV at a temperature difference (Δ T ) of 40 K. The 3D-printed thermoelectric generator enables the collection of thermal energy. In addition, the device has excellent temperature sensing characteristics, and this temperature signal to electrical signal conversion is very rapid, which enables temperature sensing alarms in a wide temperature domain. Combining these features, an energy harvesting and electrical alarm concept for home-scale applications is proposed, which is expected to provide a diverse research idea for the application of next-generation thermoelectric devices.

Introducing nanoscale heterostructure interfaces into material matrix is an effective strategy to optimize the thermoelectric performance by energy-dependent carrier filtering effect. In this study, highly (00l)-oriented Bi2Te3/Te heterostructure thin films have been fabricated on single-crystal MgO substrates using a facile magnetron co-sputtering method. Bi2Te3/Te heterostructure thin films with Te contents of 63.8 at% show an optimized thermoelectric performance, which possess a Seebeck coefficient of -157.7 μV K-1 and an electrical conductivity of 9.72 × 104 S m-1, leading to a high power factor approaching 25 μW cm-1 K-2. The partially decoupled behavior of the Seebeck coefficient and electrical conductivity is contributed to Bi2Te3/Te heterostructure interfaces, which causes interfacial barrier filtering and scattering effects; thus, a high level of the Seebeck coefficient is obtained. Meanwhile, carrier transport in a-b plane can benefit from the highly preferred orientation, which guarantees a remarkably high electrical conductivity. We anticipate that our strategy may guide the way for preparing high-performance thermoelectric materials by microstructure design and regulation.