Search

One of the most innovative possibilities offered by oxides is the use of heat currents for computational purposes. Towards this goal, phase-change oxides, including ferroelectrics, ferromagnets and related materials, could reproduce sources, logic units and memories used in current and future computing schemes.

Ferroelectric materials display exotic polarization textures at the nanoscale that could be used to improve the energetic efficiency of electronic components. The vast majority of studies were conducted in two dimensions on thin films, that can be further nanostructured, but very few studies address the situation of individual isolated nanocrystals synthesized in solution, while such structures could open other field of applications. In this work, we experimentally and theoretically studied the polarization texture of ferroelectric barium titanate (BaTiO$_3$, BTO) nanocrystals (NC) attached to a conductive substrate and surrounded by air. We synthesized NC of well defined quasi-cubic shape and 160 nm average size, that conserve the tetragonal structure of BTO at room temperature. We then investigated the inverse piezoelectric properties of such pristine individual NC by piezoresponse force microscopy (PFM), taking particular care of suppressing electrostatic artifacts. In all the NC studied, we could not detect any vertical PFM signal, and the maps of the lateral response all displayed larger displacements on the edges. Using field-phase simulations dedicated to ferroelectric nanostructures, we were able to predict the equilibrium polarization texture. These simulations revealed that the NC core is composed of 180{\deg} up and down domains defining the polar axis, that rotate by 90{\deg} in the two facets orthogonal to this axis, eventually lying within these planes forming a layer of about 10 nm thickness mainly composed of 180{\deg} domains along an edge. From this polarization distribution we predicted the lateral PFM response, that revealed to be in very good qualitative agreement with the experimental observations. This work positions PFM as a relevant tool to evaluate the potential of complex ferroelectric nanostructures to be used as sensors.

Ferroelectric-dielectric superlattices have attracted renewed interest for their ability to frustrate the polar order, leading to the emergence of exotic polar textures. The electrostatic depolarization, thought to be responsible for the complex polar textures in these superlattices can be alleviated by replacing the dielectric layer with a metallic one. One would thus expect that a close to uniform polarization state be recovered in the ferroelectric layer. However, here we show, using Density Functional Theory calculations, that antipolar motions may still appear in superlattices combining multiferroic BiFeO3 and metallic SrRuO3 perovskite layers. We find that a complex oxygen octahedra tilt order, a so-called nanotwin phase, exists in BiFeO3/SrRuO3 superlattices and competes with a more conventional phase. It leads to a doubling of the chemical period along the out-of-plane direction, owing to the presence of an oxygen octahedra tilt wave pattern and antipolar motions caused by trilinear energy couplings. We also show that out-of-plane polar displacements in the BiFeO3 layer may reverse the (anti)polar displacements thanks to a strong quadrilinear coupling term. The oxygen tilt-driven couplings identified here reveal new ways to engineer and control polar displacements in superlattice based polar metals and hybrid improper (anti)ferroelectrics., Comment: 4 figures

A novel atomistic effective Hamiltonian scheme, incorporating an original and simple bilinear energetic coupling, is developed and used to investigate the temperature dependent physical properties of the prototype antiferroelectric PbZrO3 (PZO) system. This scheme reproduces very well the known experimental hallmarks of the complex Pbam orthorhombic phase at low temperatures and the cubic paraelectric state of Pm 3m symmetry at high temperatures. Unexpectedly, it further predicts a novel intermediate state also of Pbam symmetry, but in which anti-phase oxygen octahedral tiltings have vanished with respect to the Pbam ground state. Interestingly, such new state exhibits a large dielectric response and thermal expansion that remarkably agree with previous experimental observations and the x-ray experiments we performed. We also conducted direct first-principles calculations at 0K which further support such low energy phase. Within this fresh framework, a re-examination of the properties of PZO is thus called for., Comment: 21 pages, 4 figures. This paper is submitted to Physical Review B

Strain engineering is a powerful mean for tuning the various functionalities of ABO3 perovskite oxide thin films. Rare-earth orthoferrite RFeO3 materials such as NdFeO3 (NFO) are of prime interest because of their intriguing magnetic properties as well as their technological potential applications especially as thin films. Here, using a large set of complementary and advanced techniques, we show that NFO epitaxial thin films, successfully grown by pulsed laser deposition on (001)-SrTiO3, show a strong magnetic anisotropy below a critical thickness tc of 54 nm, associated with the occurrence of structural modifications related to symmetry and domain pattern changes. By varying the tensile misfit strain through the decrease of film thickness below tc, the amplitudes of in and out-of-plane magnetization can be continuously tuned while their ratio stays constant. Furthermore, different low-temperature magnetic behaviors are evidenced for strained and relaxed films, suggesting that the strain-induced structural state impacts the magnetic phase stability.

Antiferroelectrics are promising materials for high energy density capacitors and the search for environmentally-friendly and efficient systems is actively pursued. An elegant strategy to create and design new (anti)ferroic system relies on the use of nanoscale superlattices. We report here the use of such strategy and the fabrication of nanoscale BiFeO3/NdFeO3 superlattices and in depth characterization using high resolution X-ray diffraction and Transmission Electron Microscopy. The structural analysis at atomic scale demonstrates that such superlattices host anti-polar ordering most likely described by an antiferroelectric-like Pbnm symmetry. Temperature dependence of anti-polar state and structural transition further hint that the stability of the anti-polar state is controlled by the BiFeO3 layer thickness within the stacking and, in a more moderate way, by interlayer strain. Discovery of such polar arrangement in superlattices and the possible generalization to the whole rare-earth family pave the way to new platforms for energy storage application as well as nano-electronic devices.

Multi Layer Capacitors MLCs are considered as the most promising refrigerant elements to design and develop electrocaloric cooling devices. Recently, the heat transfer of these MLCs has been considered. However, the heat exchange with the surrounding environment has been poorly, if not, addressed. In this work, we measure by infrared thermography the temperature change versus time in four different heat exchange configurations. Depending on the configurations, Newtonian and non-Newtonian regimes with their corresponding Biot number are determined allowing to provide useful thermal characteristics. Indeed, in case of large area thermal pad contacts, heat transfer coefficients up to 3400 W m-2 K-1 are obtained showing that the standard MLCs already reach the needs for designing efficient prototypes. We also determine the ideal Brayton cooling power in case of thick wires contact which varies between 3.4 mW and 9.8 mW for operating frequencies varying from 0.25 Hz to 1 Hz. While only heat conduction is considered here, our work provides some design rules for improving heat exchanges in future devices.

Macroscopic polarity and its dynamic response to external electric fields and temperature in the nominally ergodic relaxor phase of pristine lead magnesium niobate crystals and ceramics, Pb(Mg1/3Nb2/3)O3 (PMN), were investigated. Dynamic pyroelectric measurements provide evidence for persistent macroscopic polarity of the samples. Annealing experiments below and above Burns temperature of polarized samples relate this polarity to the presence of polar nano entities and their dynamics. The dc electric field strength required for macroscopic polarization reversal is similar to the amplitude of the ac field where dynamic nonlinear dielectric permittivity reaches maximum. Consequently, the aforementioned maximum is related to the reorientation of polar nano entities. The results question the existence of an ergodic state in PMN below Burns temperature., Comment: 14 pages main text, 5 pages supplementary information

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabilized in the regions with a direct connection between the substrate and the film through the compressive strain provided by an interfacial crystalline c-SiO2 layer., The film relaxes to a bulk m-phase in regions where a-SiOx regrows. On Si (100), we observe polar orthorhombic o-phase coexisting with m-phase, stabilized by inhomogeneous strains at the intersection of monoclinic domains. This work provides fundamental insight into the conditions that lead to the preferential stabilization of r-, o- and m-phases., Comment: 18 pages of manuscript, 7 figures

The bandgap energy values for the ferroelectric BaTiO3-based solid solutions with isovalent substitution Ba1-x SrxTiO3, BaZrxTi1-xO3 and BaSnxTi1-xO3 were determined using diffuse reflectance spectra. While the corresponding unit cell volume follows Vegard's law in accordance with the different ionic radii of the ionic substitutions, the bandgap values depict non-linear compositional dependences for all the solid solutions. The effect is considerably large for BaZrxTi1-xO3 and BaSnxTi1-xO3 solutions, depicting a bandgap linear compositional dependence up to x=0.6, for x>0.6 BaZrxTi1-xO3 compounds present much larger bandgap values than BaSnxTi1-xO3 counterparts. Electronic properties have been investigated through X-ray photoelectron spectroscopy in BaSnxTi1-xO3 compounds, indicating that the Sn 3d and Ti 2p core levels shift against the Ba 3d ones within the whole compositional range with the same energy trend as that observed for the optical bandgap. Since for Ba1-x SrxTiO3 compounds no major bandgap variation is observed, we conclude that the bandgap compositional dependences observed for BaSnxTi1-xO3 compounds and BaZrxTi1-xO3 ones are originated from the structural sensitivity of the O, Ti and Sn or Zr electronic bands involved in the bandgap transition of these compounds. With this work, we underline the reliability of the bandgap determined from diffuse reflectance spectrometry experiments, as a means to non-invasively evaluate the electronic properties of powder materials., Comment: THIRD SEMINAR ON THE MECHANICS OF MULTIFUNCTIONAL MATERIALS, Jun 2018, Bad-Honnef, Germany. 2018

Clear anomalies in the lattice thermal expansion (deviation from linear variation) and elastic properties (softening of the sound velocity) at the antiferromagnetic-to-paramagnetic transition are observed in the prototypical multiferroic BiFeO3 using a combination of picosecond acoustic pump-probe and high-temperature X-ray diffraction experiments. Similar anomalies are also evidenced using first-principles calculations supporting our experimental findings. Those calculations in addition to a simple Landau-like model we also developed allow to understand the elastic softening and lattice change at T_N as a result of magnetostriction combined with electrostrictive and magnetoelectric couplings which renormalize the elastic constants of the high-temperature reference phase when the critical T_N temperature is reached.

Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO$_3$ by aluminium, we fabricated a junction exhibiting a diode-like behaviour. At the equilibrium, the interface is insulating. The metallic behaviour can be recovered by applying a voltage drop across the junction in one polarity only. The electrical properties in direct and reverse bias are investigated. The observed electro-resistive effect rises up to $10^5$ \% and can be interpreted in terms of (i) a spontaneous redox reaction occurring at the interface and (ii) its reversal induced by charge injection in direct bias.

After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 {\mu}C/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.

The polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/effective cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue endurance of the film is determined by the effective voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the effective voltage should be considered as the genuine driving voltage determining the polarization fatigue in PLZT antiferroelectric films., Comment: 17 pages, 3 figures, 1 table

We present neutron diffraction, dielectric permittivity and photoconductivity measurements, evidencing that lead-magnesium niobate experiences a diffuse phase transformation between the spherical glass and quadrupole glass phases, in the temperature interval between 400 K and 500 K, with the quadrupole phase possessing extremely high magnitudes of dielectric permittivity. Our analysis shows that the integral diffuse scattering intensity may serve as an order parameter for this transformation. Our experimental dielectric permittivity data support this choice. These data are important for the aplications desiring giant dielectric responses, in a wide temperature intervals and not related to electron's excitations., Comment: 6 figures

The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical thickness at which an unusual ferroelectric-\'\' polar non-ferroelectric\rq\rq phase transition occurs in asymmetric ferroelectric tunnel junctions. In the \'\' polar non-ferroelectric\rq\rq phase, there is only one non-switchable polarization which is caused by the competition between the depolarizing field and the built-in field, and closure-like domains are proposed to form to minimize the system energy. The transition temperature is found to decrease monotonically as the ferroelectric barrier thickness is decreased and the reduction becomes more significant for the thinner ferroelectric layers. As a matter of fact, the built-in electric field does not only result in smearing of phase transition but also forces the transition to take place at a reduced temperature. Such findings may impose a fundamental limit on the work temperature and thus should be further taken into account in the future ferroelectric tunnel junction-type or ferroelectric capacitor-type devices., Comment: 9 pages, 8 figures, submitted to PRB

We investigate the high-pressure phase transitions in BiFeO3 by single crystal and powder x-ray diffraction, as well as single crystal Raman spectroscopy. Six phase transitions are reported in the 0-60 GPa range. At low pressures, up to 15 GPa, 4 transitions are evidenced at 4, 5, 7 and 11 GPa. In this range, the crystals display large unit cells and complex domain structures, which suggests a competition between complex tilt systems and possibly off-center cation displacements. The non polar Pnma phase remains stable over a large pressure range between 11 and 38 GPa, where the distortion (tilt angles) changes only little with pressure. The two high-pressure phase transitions at 38 and 48 GPa are marked by the occurence of larger unit cells and an increase of the distorsion away from the cubic parent perovskite cell. We find no evidence for a cubic phase at high pressure, nor indications that the structure tends to become cubic. The previously reported insulator-to-metal transition at 50 GPa appears to be symmetry breaking., Comment: 11 pages, 8 figures

The structural evolution of epitaxial mono-oriented (i.e. with the c-axis perpendicular to the interface) ferroelectric Pb(Zr0.2,Ti0.8)O3 thin film has been investigated, using high resolution, temperature dependent, X-ray diffraction. The full set of lattice parameters was obtained, it allowed to estimate the variation of the polarization as a function of temperature, underlying the difference between the polarization-induced tetragonality and the elastic one. The temperature evolution of the misfit strain has been calculated and found to be in good agreement with the theoretical temperature-misfit strain phase diagram, Comment: 11 pages, 3 figures

The stability of the disordered glassy phase in the relaxors PbMg1/3Nb2/3O3 and (PbMg1/3Nb2/3O3)0.88(PbTiO3)0.12, called PMN and PMN-PT, was investigated by preparing partially polarized samples and allowing them to age at zero field in the temperature range for which the phase is history-dependent. The PMN-PT polarization would spontaneously increase until long-range order formed, first appearing as giant polarization noise. Thus the thermodynamically stable phase in PMN-PT appears to be ferroelectric. In contrast, a PMN sample lacking the sharp first-order field-driven transition found in some other samples spontaneously depolarized, consistent with its glassy state being thermodynamically stable. Detailed thermal depolarization results in PMN show two distinct broad peaks as well as a small fraction of material with a distribution of abrupt melting transitions., Comment: submitted to Phys. Rev. B. 9 text pages + 10 figs

The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure (a/c/a/c to a1/a2/a1/a2), and Tc_film = 825K where the film undergoes a ferroelectricparaelectric phase transition. The films remains tetragonal on the whole range of temperature investigated. The evolutions of the domain structure and lattice parameters were found to be in very good agreement with the calculated domain stability map and theoretical temperature-misfit strain phase diagram respectively., Comment: To be pubilshed in Appl. Phys. Lett