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3. RF GaN Market Broadens Its Appeal with an Appetite for GaN-on-Silicon.

Author

Ghorbel, Aymen, Dogmus, Ezgi, and Chiu, Poshun

Subjects
*GALLIUM nitride
Abstract

The article focuses on the RF GaN (Radio Frequency Gallium Nitride) market and its evolution, particularly with the emergence of GaN-on-Silicon (GaN-on-Si) technology. It discusses how GaN technology has been widely used in the defense and telecom markets, with RF applications predominantly dominated by GaN-on-Silicon Carbide (GaN-on-SiC) devices. It also explores how GaN-on-Si technology is beginning to impact the supply chain and potentially shape future telecom technologies.

Published
2023

4. Key features for high efficiency and highly robust mmW GaN HEMTs: [Invited]

Author

Pécheux, Romain, Kabouche, Riad, defais, tommy, Dogmus, Ezgi, Malek, Zegaoui, Medjdoub, F, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

5. GaN-on-Silicon transistors with extremely low off-state leakage current above 3 kilovolts: [Invited]

Author

Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, F, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

6. High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Author

Dogmus, Ezgi, Kabouche, Riad, Linge, Astrid, Okada, Etienne, Zegaoui, Malek, Medjdoub, Farid, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

7. AlN-based HEMTs grown on silicon substrate by NH3-MBE

Author

Rennesson, Stephanie, Semond, Fabrice, Nemoz, M., Massies, Jeans, Chenot, Stéphane, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, F, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN buffer on silicon, then a compressively strained thin-GaN channel on top of which an almost strain-free AlN barrier is grown. The concept has been demonstrated by D. Jena et al. on AlN-on-sapphire template, as well as on SiC. However 2DEG mobility values obtained are still quite low mainly due to growth issues. In this work, we take advantage of our strong know-how in growing pure AlN on silicon using MBE. Indeed, since the past 20 years, strong efforts have been successfully conducted, in order to develop a suitable AlN nucleation/buffer layer on Si substrate (with smooth AlN surface, high crystalline quality, controlled and reproducible AlN/Si interface). With a total epilayer thickness < 330nm-thick, a 2DEG density (Ns) as high as 2.7x1013 cm-2 is measured before passivation. Results indicate that Ns increases improving the material quality as well as using SiN surface passivation. An original in-situ SiN surface passivation using NH3-MBE is presented. State-of-the-art AlN-based HEMT mobility values above 600 cm²/Vs are measured and recent improvements are on going to lower the sheet resistance as required for RF applications

Published
2017

8. Substrate grounded GaN-on-Si HEMTs with record vertical breakdown above 2 kV

Author

Dogmus, Ezgi, Linge, Astrid, Zegaoui, Malek, Medjdoub, F, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

9. Low RF losses up to 110 GHz in GaN-on-silicon HEMTs

Author

Pecheux, R, Kabouche, Riad, Dogmus, Ezgi, Linge, A, Zegaoui, Malek, Medjdoub, F, Medjdoub, Farid, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Renatech Network, and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

International audience; We report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. This stateof-the-art performance makes GaN-on-Silicon HEMTs competitive with GaN-on-SiC in terms of parasitic RF losses. Furthermore, a maximum dc output current close to 1 A/mm together with low leakage current of 1 μA/mm and low trapping effects are achieved while using a short gate length of 0.2 μm. The large signal measurements confirmed the high quality of the epitaxy and the device processing as well as the low parasitic RF losses. This is reflected by a high output power density of 4.5 W/mm achieved at 18 GHz.

Published
2017

14. GaN-Based Laser Wireless Power Transfer System

Author

De Santi, Carlo, primary, Meneghini, Matteo, additional, Caria, Alessandro, additional, Dogmus, Ezgi, additional, Zegaoui, Malek, additional, Medjdoub, Farid, additional, Kalinic, Boris, additional, Cesca, Tiziana, additional, Meneghesso, Gaudenzio, additional, and Zanoni, Enrico, additional

Published
2018
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15. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

Author

Rennesson, Stephanie, primary, Leroux, Mathieu, additional, Al Khalfioui, Mohamed, additional, Nemoz, Maud, additional, Chenot, Sébastien, additional, Massies, Jean, additional, Largeau, Ludovic, additional, Dogmus, Ezgi, additional, Zegaoui, Malek, additional, Medjdoub, Farid, additional, and Semond, Fabrice, additional

Published
2017
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16. Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

Author

Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, Méchin, Laurence, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, F, Lacam, Cédric, Gamarra, Piero, Ben-Ammar, Hichem, Chauvat, Marie-Pierre, Morales, Magali, Ruterana, Pierre, Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thales III-V Lab (III-V Lab), THALES [France], Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), THALES, and Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

18. InxGa1-xN/GaN MQWs heterostructures for solar cells applications

Author

Dogmus, Ezgi, Largeau, Ludovic, Rolland, Nathalie, Medjdoub, F, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Abstract

The high quality and high indium content InxGa1-xN/GaN (x~ 0.10 and x~0.30) multiple quantum wells (MQWs) grown on sapphire (0001) by metal-organic chemical vapor deposition (MOCVD) were investigated by High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM). It was found that both designs with fully strained 25 cycles InGaN/GaN MQW epilayers shows very low defect density and excellent structural quality showing that they are highly promising for future applications such as solar cells.

Published
2014

19. Characterization of InxGa1-xN/GaN MQWs heterostructures for solar cells applications

Author

Dogmus, Ezgi, Largeau, Ludovic, Rolland, Natalie, Medjdoub, Farid, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Abstract

The high quality and high indium content InxGa1-xN/GaN (x~ 0.10 and x~0.30) multiple quantum wells (MQWs) grown on sapphire (0001) by metal-organic chemical vapor deposition (MOCVD) were investigated by High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM). It was found that both designs with fully strained 25 cycles InGaN/GaN MQW epilayers shows very low defect density and excellent structural quality showing that they are highly promising for future applications such as solar cells.

Published
2014

20. InAlGaN/GaN HEMTs at Cryogenic Temperatures

Author

Dogmus, Ezgi, primary, Kabouche, Riad, additional, Lepilliet, Sylvie, additional, Linge, Astrid, additional, Zegaoui, Malek, additional, Ben-Ammar, Hichem, additional, Chauvat, Marie-Pierre, additional, Ruterana, Pierre, additional, Gamarra, Piero, additional, Lacam, Cédric, additional, Tordjman, Maurice, additional, and Medjdoub, Farid, additional

Published
2016
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22. Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE.

Author

Rennesson, Stephanie, Leroux, Mathieu, Al Khalfioui, Mohamed, Nemoz, Maud, Chenot, Sébastien, Massies, Jean, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, and Semond, Fabrice

Subjects
MODULATION-doped field-effect transistors, ALUMINUM nitride, SUBSTRATES (Materials science), MOLECULAR beam epitaxy, SILICON
Abstract

AlN‐based HEMTs grown on silicon by ammonia‐assisted molecular beam epitaxy (NH3‐MBE) are demonstrated and studied. As shown by photoluminescence, the very thin GaN channel (35–55 nm‐thick) is compressively strained on the 250 nm‐thick relaxed AlN buffer layer grown on silicon substrate. The structure is then completed by an 8 nm‐thick AlN barrier and 2 nm‐thick GaN cap. Despite an ultrathin total epilayer (only ≈300 nm‐thick), a high 2DEG density (≈2.7 × 1013 cm−2) is measured by Hall effect. Room temperature mobility values, as high as 636 cm2 V−1 s−1, are measured. They are higher than those reported on similar structures grown on sapphire, SiC and bulk AlN substrates, showing the interest of growing such structures on silicon substrate. Also, low contact resistance values are obtained, as low as 0.18 Ω mm, by using a basic fabrication process. [ABSTRACT FROM AUTHOR]

Published
2018
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23. The RF GaN Device Market: A Roller-Coaster Ride.

Author

Chiu, Poshun and Dogmus, Ezgi

Subjects
*GALLIUM nitride, *VSATS (Telecommunication), *TELECOMMUNICATION satellites, CHINA-United States relations
Abstract

The article presents the discussion on analysts at Yole Développement (Yole) predicting the RF GaN device market used in military radar and electronic warfare.

Published
2021

25. Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

Author

Rennesson, Stephanie, Leroux, Mathieu, Al Khalfioui, Mohamed, Nemoz, Maud, Chenot, Sébastien, Massies, Jean, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, and Semond, Fabrice

Abstract

AlN‐based HEMTs grown on silicon by ammonia‐assisted molecular beam epitaxy (NH3‐MBE) are demonstrated and studied. As shown by photoluminescence, the very thin GaN channel (35–55 nm‐thick) is compressively strained on the 250 nm‐thick relaxed AlN buffer layer grown on silicon substrate. The structure is then completed by an 8 nm‐thick AlN barrier and 2 nm‐thick GaN cap. Despite an ultrathin total epilayer (only ≈300 nm‐thick), a high 2DEG density (≈2.7 × 1013cm−2) is measured by Hall effect. Room temperature mobility values, as high as 636 cm2V−1s−1, are measured. They are higher than those reported on similar structures grown on sapphire, SiC and bulk AlN substrates, showing the interest of growing such structures on silicon substrate. Also, low contact resistance values are obtained, as low as 0.18 Ω mm, by using a basic fabrication process. AIN‐based HEMTs on silicon substrate are demonstrated for the first time. Unlike in traditional nitride HEMTs the GaN channel is very thin and compressively strained in between 2 relaxed AIN layers (barrier and back‐barrier). Having a very high 2DEG density using ultrathin and simple heterostructures on Si is an interesting playground and it has a strong potential in terms of applications.

Published
2018
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