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3. Development of an Efficient Acetone Conductometric Sensor Based on NdFeO3

Author

Anajafi, Z., Naseri, M., Donato, N., Leonardi, S. G., Neri, G., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Di Francia, G., editor, Di Natale, C., editor, Alfano, B., editor, De Vito, S., editor, Esposito, E., editor, Fattoruso, G., editor, Formisano, F., editor, Massera, E., editor, Miglietta, M. L., editor, and Polichetti, T., editor

Published
2020
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5. Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT

Author

Marinkovic, Z, Cai, J, Gugliandolo, G, Latino, M, Fazio, E, Bosi, G, Raffo, A, Crupi, G, Donato, N, Marinkovic Z., Cai J., Gugliandolo G., Latino M., Fazio E., Bosi G., Raffo A., Crupi G., Donato N., Marinkovic, Z, Cai, J, Gugliandolo, G, Latino, M, Fazio, E, Bosi, G, Raffo, A, Crupi, G, Donato, N, Marinkovic Z., Cai J., Gugliandolo G., Latino M., Fazio E., Bosi G., Raffo A., Crupi G., and Donato N.

Abstract

Recently a GaN HEMT small-signal model based on gated recurrent unit (GRU) neural networks has been proposed and it has been proved that a very good accuracy can be achieved by using the developed modeling approach. However, as the GRU networks are recurrent networks, meaning that the previous states contribute to the current output, the aim of the work is to test and validate the behavior of the GaN HEMT model depending on the input order and history in order to derive the corresponding outcomes and to gain a better understanding of the inherent features of the developed modeling strategy.

Published
2023

6. A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function

Author

Gugliandolo, G, Crupi, G, Vadalà, V, Raffo, A, Donato, N, Vannini, G, Gugliandolo G., Crupi G., Vadalà Valeria, Raffo A., Donato N., Vannini G., Gugliandolo, G, Crupi, G, Vadalà, V, Raffo, A, Donato, N, Vannini, G, Gugliandolo G., Crupi G., Vadalà Valeria, Raffo A., Donato N., and Vannini G.

Abstract

The purpose of this letter is to present a measurement-based analysis of the transistor current-gain peak (CGP), which consists of a sudden peak in the magnitude of the short-circuit current-gain (h21) at a certain frequency. A systematic and numerical approach is proposed to analyze CGP. This powerful and technology-independent methodology is based on developing an accurate fitting of the experiments using the complex Lorentzian function, thus allowing an accurate and straightforward extraction of the parameters describing CGP. The validity of the developed technique is fully demonstrated by its application to the analysis of CGP for a gallium nitride (GaN) high-electron-mobility transistor (HEMT) at different ambient temperatures and bias conditions.

Published
2023

7. GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition

Author

Gugliandolo, G, Crupi, G, Marinkovic, Z, Vadalà, V, Raffo, A, Donato, N, Vannini, G, Gugliandolo G., Crupi G., Marinkovic Z., Vadalà Valeria, Raffo A., Donato N., Vannini G., Gugliandolo, G, Crupi, G, Marinkovic, Z, Vadalà, V, Raffo, A, Donato, N, Vannini, G, Gugliandolo G., Crupi G., Marinkovic Z., Vadalà Valeria, Raffo A., Donato N., and Vannini G.

Abstract

The current-gain peak (CGP) appearing in the frequency-dependent behaviour of the magnitude of the short-circuit current-gain (h21) is, currently, attracting much attention. Recently, a systematic procedure has been proposed for accomplishing a straightforward fitting of h21 using the complex Lorentzian function and, then, an effective identification of a set of parameters for an accurate and complete assessment of the size and shape of CGP. The attention has been focused on the study of CGP versus ambient temperature and drain-source voltage (VDS) by considering a gallium nitride (GaN) high electron-mobility transistor (HEMT) as device under test (DUT). This contribution is aimed at providing a further insight into the analysis of CGP by applying the developed procedure for investigating the impact of the gate-source voltage on the size and shape of CGP.

Published
2023

18. GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks

Author

Cai, J, Gugliandolo, G, Marinković, Z, Latino, M, Fazio, E, Bosi, G, Raffo, A, Crupi, G, Donato, N, Cai, Jialin, Gugliandolo, Giovanni, Marinković, Zlatica, Latino, Mariangela, Fazio, Enza, Bosi, Gianni, Raffo, Antonio, Crupi, Giovanni, Donato, Nicola, Cai, J, Gugliandolo, G, Marinković, Z, Latino, M, Fazio, E, Bosi, G, Raffo, A, Crupi, G, Donato, N, Cai, Jialin, Gugliandolo, Giovanni, Marinković, Zlatica, Latino, Mariangela, Fazio, Enza, Bosi, Gianni, Raffo, Antonio, Crupi, Giovanni, and Donato, Nicola

Abstract

This study is focused on the modeling of an active electronic device based on the gallium-nitride (GaN) semiconductor technology by using an optimization-based procedure. Gated recurrent units (GRUs) are used to build the device model for predicting the scattering (S-) parameter measurements. By comparing measurements and simulations under different operating conditions, it is found that the extracted GRU-based model can faithfully reproduce the frequency- and temperature-dependent performance of the studied power device. In addition, the proposed modeling method is used to analyze and model the magnitude of the short-circuit current gain (h 21 ).

Published
2023

26. Sensing Behavior of SnO2-Graphene Nanocomposites

Author

Neri, G., Latino, M., Donato, N., Baek, S., Pinna, N., Baldini, Francesco, editor, D’Amico, Arnaldo, editor, Di Natale, Corrado, editor, Siciliano, Pietro, editor, Seeber, Renato, editor, De Stefano, Luca, editor, Bizzarri, Ranieri, editor, and Andò, Bruno, editor

Published
2014
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27. A Low Cost Inkjet Deposition System for Sensors Development

Author

Donato, N., Aloisio, D., Patti, E., Latino, M., Spadaro, D., Neri, G., Baldini, Francesco, editor, D’Amico, Arnaldo, editor, Di Natale, Corrado, editor, Siciliano, Pietro, editor, Seeber, Renato, editor, De Stefano, Luca, editor, Bizzarri, Ranieri, editor, and Andò, Bruno, editor

Published
2014
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43. An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers.

Author

Naydenov, K., Donato, N., and Udrea, F.

Subjects
*ACOUSTIC phonons, *PHONON scattering, *SOUND wave scattering, *SEMICONDUCTORS
Abstract

In this work, a new model for the mobility due to Coulombic scattering by interface charges (μ C) in 4H-SiC MOS structures, which is suitable for device study via finite element (FE)-based simulations, is proposed. Unlike popular expressions based on the classical Sah–Lombardi model which lead to major inconsistencies in μ C 's variation with the semiconductor depth z , the proposed model combines previous experimental data with established theoretical results on μ C 's depth dependence. The evolution of the components of the channel drift mobility (μ c h ) with z and the gate bias V g s is then examined using this model by means of FE analysis. It is found that while μ C is the dominant component at the surface, at larger depths μ c h is determined by the mobility due to acoustic phonon scattering (μ S A ). Moreover, at low channel dopings (N A) or temperatures above approximately 425 K , μ S A replaces μ C as the key limitation. Conversely, the roughness scattering mobility μ S R becomes important only at very high V g s and N A. [ABSTRACT FROM AUTHOR]

Published
2020
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47. Latest Advancements in SSVEPs Classification for Single-Channel, Extended Reality-based Brain-Computer Interfaces

Author

Angrisani L., Arpaia P., De Benedetto E., Donato N., Duraccio L., Angrisani, L., Arpaia, P., De Benedetto, E., Donato, N., and Duraccio, L.

Subjects
brain computer interface, measurement systems, SSVEP, extended reality, healthcare 4.0
Abstract

This work details the latest advancements on a single-channel, reactive Brain-Computer Interfaces developed at the Interdepartmental Research Center in Health Management and Innovation in Healthcare (CIRMIS) of the University of Naples Federico II. The proposed instrumentation is based on Extended Reality (XR) and exploits the acquisition and classification of the Steady-State Visually Evoked Potentials (SSVEPs). In particular, an XR headset is employed for generating the flickering stimuli necessary to the SSVEP elicitation. The users brain signals are captured by means of a highly wearable and portable electroencephalografic acquisition unit, which is connected to a portable processing unit in charge of processing in real time the incoming data. In this way, a deeper interaction between users and external devices with respect to traditional architectures is guaranteed. The classification capability of the proposed instrument has been significantly improved over the years. Currently, in fact, a classification accuracy up to 90 % is obtained with at least 2 s of acquisition time.

Published
2022

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