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In this paper, we present an approach to study the electrical and spectral degradation properties of InxGa1-xAs (x = 0.2, 0.3, 0.53) solar cell under 150 keV proton irradiation based on numerical simulation. First, the structures of InxGa1-xAs solar cell were optimized by adjusting the doping concentration of base layer and modifying the thickness of base and emitter layer. The structural parameter related to providing higher conversion efficiency was figured out. Then, the degradation of electrical parameters such as short-circuit current density (Jsc), open-circuit voltage (Voc), maximum output power (Pmax), fill factor (FF), as well as the spectral response were obtained. The degradation correlation with radiation-induced defects was built to reveal the damage mechanism under 150 keV proton irradiation. This study provides constructive model of InxGa1-xAs to be applied in multi-junction solar cells, and the predicted degradation behavior could contribute to design the radiation-hardened space devices. [ABSTRACT FROM AUTHOR]

Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Schottky photodiodes. After annealing at 500°C in O[SUB2] for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8×10[SUB-10] A/cm[SUP2] at -5 V bias. The peak responsivity is 105 mA/W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8×10[SUP15] cmHz[SUP1/2] W[SUP-1] at zero bias. [ABSTRACT FROM AUTHOR]