Search

Evidence of chirality was observed at the Fe metal center in Fe(III) spin crossover coordination salts [Fe(qsal)2][ Ni(dmit)2] and [Fe(qsal)2](TCNQ)2 from X-ray absorption spectroscopy at the Fe 2p3/2 core threshold. This indicates the formation of chiral domains that influence the octahedral coordination on the Fe core., Comment: 5 pages, 4 figures. Submitted for publication in JPCM

From a comparison of energy dispersive analyses of X-rays (EDAX), the known molecular stoichiometry and X-ray photoemission spectroscopy (XPS), it is evident that the Fe(III) spin crossover salt [Fe(qsal)2Ni(dmit)2] has a preferential surface termination with the Ni(dmit)2 moiety. This preferential surface termination leads to a significant surface to bulk core level shift for the Ni 2p X-ray photoemission core level, not seen in the corresponding Fe 2p core level spectra. Inverse photoemission spectroscopy (IPES), thus provides some indication of the density of states resulting from the dmit2 = 1,3-dithiol-2-thione-4,5-dithiolato ligand unoccupied molecular orbitals., Comment: 5 pages, 4 figures, submitted for publication in JPCM

Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven {\pi}/2 rotation of the N\'eel vector. Nonvolatile, voltage-controlled N\'eel vector rotation is a much-desired material property in the context of antiferromagnetic spintronics enabling ultra-low power, ultra-fast, nonvolatile memory, and logic device applications. N\'eel vector rotation is detected with the help of heavy metal (Pt) Hall-bars in proximity of pulsed laser deposited B:Cr2O3 films. To facilitate operation of B:Cr2O3-based devices in CMOS environments, the N\'eel temperature, TN, of the functional film must be tunable to values significantly above room temperature. Cold neutron depth profiling and x-ray photoemission spectroscopy depth profiling reveal thermally activated B-accumulation at the B:Cr2O3/ vacuum interface in thin films deposited on Al2O3 substrates. We attribute the B-enrichment to surface segregation. Magnetotransport data confirm B-accumulation at the interface within a layer of about 50 nm thick where the device properties reside. Here TN enhances from 334 K prior to annealing, to 477 K after annealing for several hours. Scaling analysis determines TN as a function of the annealing temperature. Stability of post-annealing device properties is evident from reproducible N\'eel vector rotation at 370 K performed over the course of weeks.

NiCo2O4 (NCO) films grown on MgAl2O4 (001) substrates have been studied using magnetometry, x-ray magnetic circular dichroism (XMCD) based on x-ray absorption spectroscopy, and spin-polarized inverse photoemission spectroscopy (SPIPES) with various thickness down to 1.6 nm. The magnetic behavior can be understood in terms of a layer of optimal NCO and an interfacial layer (1.2+/- 0.1 nm), with a small canting of magnetization at the surface. The thickness dependence of the optimal layer can be described by the finite-scaling theory with a critical exponent consistent with the high perpendicular magnetic anisotropy. The interfacial layer couples antiferromagnetically to the optimal layer, generating exchange-spring styled magnetic hysteresis in the thinnest films. The non-optimal and measurement-speed-dependent magnetic properties of the interfacial layer suggest substantial interfacial diffusion.

In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined with an antiferromagnet. The analysis of structure, magnetism and electronic states corroborate that there is an interfacial layer CoO between the CoFe2O4(111) thin film and the Al2O3(0001) substrate. The power-law thickness dependence of the intrinsic exchange bias verifies its interfacial origin. This work suggests interfacial engineering can be an effective route for achieving large exchange bias., Comment: 15 pages, 5 figures

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a non-volatile 2T-1MEFET memory bit-cell with separate read and write paths. We show that with proper co-design at the device, cell and array levels, such a design is a promising candidate for fast non-volatile cache memory, termed as MERAM. To further evaluate its performance in memory system, we, for the first time, build a device-to-architecture cross-layer evaluation framework based on an experimentally-calibrated MEFET device model to quantitatively analyze and benchmark the proposed MERAM design with other memory technologies, including both volatile memory (i.e. SRAM, eDRAM) and other popular non-volatile emerging memory (i.e. ReRAM, STT-MRAM, and SOT-MRAM). The experiment results show that MERAM has a high state distinguishability with almost 36x magnitude difference in sense current. Results for the PARSEC benchmark suite indicate that as an L2 cache alternative, MERAM reduces Energy Area Latency (EAT) product on average by ~98\% and ~70\% compared with typical 6T SRAM and 2T SOT-MRAM platforms, respectively., Comment: 8 pages, 9 figures

We carry out X-ray absorption spectroscopy experiment at oxygen K-edge in croconic acid (C5H2O5) crystal as a prototype of ferroelectric organic molecular solid, whose electric polarization is generated by proton transfer. The experimental spectrum is well reproduced by the electron-hole excitation theory simulations from configuration generated by ab initio molecular dynamics simulation. When inversion symmetry is broken in ferroelectric state, the hydrogen bonding environment on the two bonded molecules become inequivalent. Such a difference is sensitively probed by the bound excitation in the pre-edge, which are strongly localized on the excited molecules. Our analysis shows that a satellite peak in the pre-edge will emerge at higher excitation energy which serves as a clear signature of ferroelectricity in the material., Comment: 6 pages, 3 figures

The magnetic interaction between rare-earth and Fe ions in hexagonal rare-earth ferrites (h-REFeO3), may amplify the weak ferromagnetic moment on Fe, making these materials more appealing as multiferroics. To elucidate the interaction strength between the rare-earth and Fe ions as well as the magnetic moment of the rare-earth ions, element specific magnetic characterization is needed. Using X-ray magnetic circular dichroism, we have studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show anti-alignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. The magnetic moment of Yb is about 1.6 \muB at low-temperature, significantly reduced compared with the 4.5 \muB moment of a free Yb3+. In addition, the saturation magnetization of Fe in h-YbFeO3 has a sizable enhancement compared with that in h-LuFeO3. These findings directly demonstrate that ferrimagnetic order exists in h-YbFeO3; they also account for the enhancement of magnetization and the reduction of coercivity in h-YbFeO3 compared with those in h-LuFeO3 at low temperature, suggesting an important role for the rare-earth ions in tuning the multiferroic properties of h-REFeO3.

The energetics and the electronic structure of methylammonium lead bromine (CH3NH3PbBr3) perovskite (001) surfaces are studied based on density functional theory. By examining the surface grand potential, we predict that the CH3NH3Br-terminated (001) surface is energetically more favorable than the PbBr2-terminated (001) surface, under thermodynamic equilibrium conditions of bulk CH3NH3PbBr3. The electronic structure of each of these two different surface terminations retains some of the characteristics of the bulk, while new surface states are found near band edges which may affect the photovoltaic performance in the solar cells based on CH3NH3PbBr3. The calculated electron affinity of CH3NH3PbBr3 reveals a sizable difference for the two surface terminations, indicating a possibility of tuning the band offset between the halide perovskite and adjacent electrode with proper interface engineering., Comment: 25 pages,5 figures,2 tables

The structural transition at about 1000 {\deg}C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. Separation of the two structural phases of LuFeO3 occurs on a length scale of micrometer, as visualized in real space using X-ray photoemission electron microscopy (X-PEEM). The results are consistent with X-ray diffraction and atomic force microscopy obtained from LuFeO3 thin films undergoing the irreversible structural transition from the hexagonal to the orthorhombic phase of LuFeO3, at elevated temperatures. The sharp phase boundaries between the structural phases are observed to align with the crystal planes of the hexagonal LuFeO3 phase. The coexistence of different structural domains indicates that the irreversible structural transition, from the hexagonal to the orthorhombic phase in LuFeO3, is a first order transition, for epitaxial hexagonal LuFeO3 films grown on Al2O3.

Electronic structures for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectra shape and the linear dichroism are observed. These differences in the spectra can be explained using the differences in crystal field splitting of the metal (Fe and Lu) electronic states and the differences in O 2p-Fe 3d and O 2p-Lu 5d hybridizations. While the oxidation states has not changed, the spectra are sensitive to the changes in the local environments of the Fe3+ and Lu3+ sites in the hexagonal and orthorhombic structures. Using the crystal-field splitting and the hybridizations that are extracted from the measured electronic structures and the structural distortion information, we derived the occupancies of the spin minority states in Fe3+, which are non-zero and uneven. The single ion anisotropy on Fe3+ sites is found to originate from these uneven occupancies of the spin minority states via spin-orbit coupling in LuFeO3.

Engineering the electronic structure of organics through interface manipulation, particularly the interface dipole and the barriers to charge carrier injection, is of essential importance to improved organic devices. This requires the meticulous fabrication of desired organic structures by precisely controlling the interactions between molecules. The well-known principles of organic coordination chemistry cannot be applied without proper consideration of extra molecular hybridization, charge transer and dipole formation at the interfaces. Here we identify the interplay between energy level alignment, charge transfer, surface dipole and charge pillow effect and show how these effects collectively determine the net force between adsorbed porphyrin 2H-TPP on Cu(111). We show that the forces between supported porphyrins can be altered by controlling the amount of charge transferred across the interface accurately through the relative alignment of molecular electronic levels with respect to the Shockley surface state of the metal substrate, and hence govern the self-assembly of the molecules.

Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization., Comment: Single PDF file: 27 pages, 6 figures; version of 12/30/09; submitted to Nature Materials