1. The effects of Se/S ratio on the photoelectric properties of nitrogen -doped graphene quantum dots decorated CdSxSe1-x composites.
- Author
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Lei, Yun, Du, Beibei, Du, Peng, Wu, Yuncui, Wang, Yongqin, Li, Can, Luo, Linhui, and Zou, Bingsuo
- Subjects
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QUANTUM dots , *PHOTOELECTRICITY , *CARRIER density , *ELECTRON-hole recombination , *CHARGE carriers , *GRAPHENE - Abstract
In the work, CdS x Se 1-x /N-GQDs composites were fabricated via a simple one-step hydrothermal process and their tunable composition, structure and photoelectric properties were characterized by various techniques. The photoelectric properties of CdS x Se 1-x /N-GQDs could be adjusted by different Se/S ratios and tunable band-gaps. CdS x Se 1-x /N-GQDs composites reached the optimal photocurrent response and the lowest interfacial impedance at the Se/S ratio of 0.75:0.25. Mott-Schottky plots and LSV spectra showed that the n-type CdS 0.25 Se 0.75 /N-GQDs presented a higher carrier density under light illumination. The excellent properties of the composites could be attributed to the mechanism involved in the excitation and electron-transfer process. On one hand, the band-gap of CdS 0.25 Se 0.75 /N-GQDs was narrowed, and more electrons were excited by the lower band-gap energy to promote a superior electron separation and transportation. On the other hand, N-GQDs acted as charge carriers and conductive way providers for electron-transfer instead of electron-hole recombination in the composites. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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